• Title/Summary/Keyword: 고전적 p-값

Search Result 13, Processing Time 0.028 seconds

베이즈 p-값의 제안 및 그 성질에 대한 연구

  • Hwang, Hyeong-Tae;O, Hui-Jeong
    • Proceedings of the Korean Statistical Society Conference
    • /
    • 2002.11a
    • /
    • pp.159-162
    • /
    • 2002
  • 일반적으로 p-값은 귀무가설에 의하여 주어지는 통계적 모형과 현재 관측치 사이의 호환성의 측도로써 가장 널리 쓰이는 개념중의 하나로 간주될 수 있다. 이 연구에서는 고전통계학에서의 고전적 p-값에 대응하는 베이즈 관점에서의 베이즈 p-값을 제안하고 그 성질에 대하여 고찰한다.

  • PDF

Comparison of Potentials for Polymeric Liquids (고분자액체에 대한 포텐셜의 비교)

  • Jeong, Hae Yeong
    • Journal of the Korean Chemical Society
    • /
    • v.46 no.6
    • /
    • pp.545-549
    • /
    • 2002
  • Many theories for polymeric liquids are based on the concepts of cell, hole, free volume or lattice etc. In the theories, van der Waals potential, Lennard-Jones 6-12 potential and their modified potentials are commonly used.In this work, Mie(p, 6) potential was applied to the Continuous Lattice Fluid Theory (which extends the discrete lattices of Lattice Fluid Theory to classically continuous lattices) and Dee-Walsch's Cell Theory (which modifies Flory's Equa-tion of State Theory). Both of them are known to be successful theories for polymeric liquids. Thus, PVT values chang-ing with p (the exponent in the repulsion potential) were calculated and compared with experimental values. And, calculated values of Lattice Fluid Theory, Flory's Equation of State Theory and Cho-Sanchez Theory using pertubation method were also compared. Through the calculated results, van der Waals potential, Lennard-Jones 6-12 potential and Mie(p, 6) potential for polymeric liquids were compared with each other.

Thiobacillus ferrooxidans 의 전기화학적 배양에 의한 셀밀도 증가

  • Jang, Yeong-Seon;Jeong, Seung-Ho;Lee, Gwang-Yeon;Park, Don-Hui;Jeong, Sang-Mun;Cha, Jin-Myeong
    • 한국생물공학회:학술대회논문집
    • /
    • 2003.04a
    • /
    • pp.428-432
    • /
    • 2003
  • In this study, we demonstrated that high cell density for Thiobacillus ferrooxidans could be obtained when optimal conditions for cell growth were maintained using electrochemical cultivation with sufficient aeration. The optimal pH for cultivation were determined to be $2.0{\pm}0.05$. When the current and potential were set to 0.15A, 4V, the Pt electrode reduced $Fe^{3+}$ to $Fe^{2+}$ with efficiency of 85%. Under these condition, cells at an initial density of 0.0025 g-dry cell/L grew for 8days until the cell density was 0.0576 g-dry cell/L. this was a 7-fold increase over conventional batch culture.

  • PDF

Liquid Chromatographic Separation of Salicylic Acid and Its Derivatives Using Amberlite XAD-Copolymers (Amberlite XAD-공중합체를 이용한 살리실산 및 크로마토그래피적 분리 그 유도체들의 액체)

  • Yong Soon Chung;Taik Hyuk Lee;Young Ja Moon;Dai Woon Lee
    • Journal of the Korean Chemical Society
    • /
    • v.33 no.1
    • /
    • pp.70-81
    • /
    • 1989
  • Reverse phase liquid chromatographic elution behaviors of salicylic acid and its derivatives were studied with classical and modern high-performance liquid chromatography(HPLC) using Amberlite XAD-4 and XAD-7 resin packed columns. Capacity factors(k') were determined in the comparatively high concentration(from 0. 010F to 0. 150F) of ferric nitrate-50% methanol solution to elucidate the elution behaviors with classical method. On the other hand, k's were measured in the various concentrations of methanol and ferric nitrate(from $2.5{\times}10^{-4}F\;to\;1.0{\times}10^{-3}F$) solution of pH 2. 25 and 293K with HPLC to explain the elution mechanism of them, and to find their optimum separation condition. As a result, it was found that log k's of salicylic acid and its derivatives were decreased with increasing the concentration of ferric ion, and the decreasing slopes of the compounds on the increasing ferric ion concentrations were related with each stability constant of ferric salicylates. Some isomers of derivatives of salicylic acid could be separated in the optimum condition.

  • PDF

A Study on Optimization of the P-region of 4H-SiC MPS Diode (4H-SiC MPS 다이오드의 P 영역 최적화에 관한 연구)

  • Jung, Se-Woong;Kim, Ki-Hwan;Kim, So-Mang;Park, Sung-Joon;Koo, Sang-Mo
    • Journal of IKEEE
    • /
    • v.20 no.2
    • /
    • pp.181-183
    • /
    • 2016
  • In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga's Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.

A Study on the Development of a System for Measuring Dielectric Hysteresis (유전 히스테리시스 특성 측정장치의 연구 개발)

  • 강대하
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.12 no.1
    • /
    • pp.58-68
    • /
    • 1998
  • A computer-controlled system for measuring dielectric hysteresis has been developed. This system consists of the wave generation par\, the high voltage amplifier part, the measurement part, the data acquisition part and the related controll circuits and is interfaced to P.C(personal computer). The applied voltage and its frequency are controlled by P.C . Since the measured datas can be saved in the RAM of P.C, the analysis and the graphics of the datas are very convenient. As a accuracy test, the capcitances of the commercial mica and styroll capacitors were measured by applying high voltage and the results were good agreement with the rating values. In the test of PZT ceramic sample, the typical D-E hysteresis loops were obtained by applying a single frequency voltage to the sample, and $\varepsilon-E$ and D-E hysteresis loops could be measured at the same time by applying a double frequency voltage to the sample.sample.

  • PDF

Analysis of the Effect of the Etching Process and Ion Injection Process in the Unit Process for the Development of High Voltage Power Semiconductor Devices (고전압 전력반도체 소자 개발을 위한 단위공정에서 식각공정과 이온주입공정의 영향 분석)

  • Gyu Cheol Choi;KyungBeom Kim;Bonghwan Kim;Jong Min Kim;SangMok Chang
    • Clean Technology
    • /
    • v.29 no.4
    • /
    • pp.255-261
    • /
    • 2023
  • Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

The Clinical Application and Results of Palliative Damus-Kaye-Stansel Procedure (고식적 Damus-Kaye-Stansel 술식의 임상적 적용 및 결과)

  • Lim, Hong-Gook;Kim, Soo-Jin;Kim, Woong-Han;Hwang, Seong-Wook;Lee, Cheul;Shinn, Sung-Ho;Yie, Kil-Soo;Lee, Jae-Woong;Lee, Chang-Ha
    • Journal of Chest Surgery
    • /
    • v.41 no.1
    • /
    • pp.1-11
    • /
    • 2008
  • Background: The Damus-Kaye-Stansel (DKS) procedure is a proximal MPA-ascending aorta anastomosis used to relieve systemic ventricular outflow tract obstructions (SVOTO) and pulmonary hypertension. The purpose of this study was to review the indications and outcomes of the DKS procedure, including the DKS pathway and semilunar valve function. Material and Method: A retrospective review of 28 patients who underwent a DKS procedure between May 1994 and April 2006 was performed. The median age at operation was 5.3 months ($13\;days{\sim}38.1\;months$) and body weight was 5.0 kg ($2.9{\sim}13.5\;kg$). Preoperative pressure gradients were $25.3{\pm}15.7\;mmHg$ ($10{\sim}60\;mmHg$). Eighteen patients underwent a preliminary pulmonary artery banding as an initial palliation. Preoperative main diagnoses were double outlet right ventricle in 9 patients, double inlet left ventricle with ventriculoarterial discordance in 6,. another functional univentricular heart in 5, Criss-cross heart in 4, complete atrioventricular septal defect in 3, and hypoplastic left heart variant in 1. DKS techniques included end-to-side anastomosis with patch augmentation in 14 patients, classical end-to-side anastomosis in 6, Lamberti method (double-barrel) in 3, and others in 5. The bidirectional cavopulmonary shunt and Fontan procedure were concomitantly performed in 6 and 2 patients, respectively. Result: There were 4 hospital deaths (14.3%), and 3 late deaths (12.5%) with a follow-up duration of $62.7{\pm}38.9$ months ($3.3{\sim}128.1$ months). Kaplan-Meier estimated actuarial survival was $71.9%{\pm}9.3%$ at 10 years. Multivariate analysis showed right ventricle type single ventricle (hazard ratio=13.960, p=0.004) and the DKS procedure as initial operation (hazard ratio=6.767, p=0.042) as significant mortality risk factors. Four patients underwent staged biventricular repair and 13 received Fontan completion. No SVOTO was detected after the procedure by either cardiac catheterization or echocardiography except in one patient. There was no semiulnar valve regurgitation (>Gr II) or semilunar valve-related reoperation, but one patient (3.6%) who underwent classical end-to-side anastomosis needed reoperation for pulmonary artery stenosis caused by compression of the enlarged DKS pathway. The freedom from reoperation for the DKS pathway and semilunar valve was 87.5% at 10 years after operation. Conclusion: The DKS procedure can improve the management of SVOTO, and facilitate the selected patients who are high risk for biventricular repair just after birth to undergo successful staged biventricular repair. Preliminary pulmonary artery banding is a safe and effective procedure that improves the likelihood of successful DKS by decreasing pulmonary vascular resistance. The long-term outcome of the DKS procedure for semilunar valve function, DKS pathway, and relief of SVOTO is satisfactory.

An Application-Specific and Adaptive Power Management Technique for Portable Systems (휴대장치를 위한 응용프로그램 특성에 따른 적응형 전력관리 기법)

  • Egger, Bernhard;Lee, Jae-Jin;Shin, Heon-Shik
    • Journal of KIISE:Computer Systems and Theory
    • /
    • v.34 no.8
    • /
    • pp.367-376
    • /
    • 2007
  • In this paper, we introduce an application-specific and adaptive power management technique for portable systems that support dynamic voltage scaling (DVS). We exploit both the idle time of multitasking systems running soft real-time tasks as well as memory- or CPU-bound code regions. Detailed power and execution time profiles guide an adaptive power manager (APM) that is linked to the operating system. A post-pass optimizer marks candidate regions for DVS by inserting calls to the APM. At runtime, the APM monitors the CPU's performance counters to dynamically determine the affinity of the each marked region. for each region, the APM computes the optimal voltage and frequency setting in terms of energy consumption and switches the CPU to that setting during the execution of the region. Idle time is exploited by monitoring system idle time and switching to the energy-wise most economical setting without prolonging execution. We show that our method is most effective for periodic workloads such as video or audio decoding. We have implemented our method in a multitasking operating system (Microsoft Windows CE) running on an Intel XScale-processor. We achieved up to 9% of total system power savings over the standard power management policy that puts the CPU in a low Power mode during idle periods.

Indicating the Problem of Shielding Design and the Way of Estimating Radiation Leakage for CT Rooms located through Survey of Radiation Leakage : in the case of Busan and Gyung-nam Area (방사선 누설선량 조사를 통한 방어시설과 누설선량 평가방법에 대한 문제점 연구 : 부산, 경남 지역 CT실을 중심으로)

  • Yang, Won Seok;Choi, Jun-Hyeok;Shin, Woon-Jae;Min, Byung-In
    • The Journal of the Korea Contents Association
    • /
    • v.13 no.11
    • /
    • pp.768-777
    • /
    • 2013
  • The purpose of this study is to minimize radiation exposure to the workers and public members during CT examination. The objects are seven of the CT rooms in university hospitals and four of the CT rooms in clinics located in Busan and Gyung-nam area. The places of measurement for radiation leakage are 1) 3 m above the ground of shielding wall in the control room 2) particular space in the control room 3) worker's gate in the control room 4) the patient gate. Its values were calculated maximum leakage radiation per week(MLRW). As a result, the worker's gate of M clinic displayed the highest dose. When it was calculated by MLRW in classic method, it showed 1) $5.97{\pm}0.23$, 2) $0.50{\pm}0.02$, 3) $10.00{\pm}0.11$, 4) $2.37{\pm}0.47$ mR/week. All of them did not exceed limit for maximum permissible dose per week(MPDW). However, When MLRW of M clinic was calculated by empirical method, its value displayed $118.31{\pm}17.72$ mR/week.(MPDW>100 mR/week). Radiation leakage influenced in the control room(p<0.05). Therefore, The way of calculating MLRW must be developed and shielding wall in control room is designed 3 m above the ground for reducing dangerous of leakage radiation.