• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.10
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• pp.1271-1278
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• 2007

In this study, the ability of Styela clava or Styela plicata to reduce ethanol-induced hepatotoxicity and hepatic and leucocytic DNA damages was evaluated. Twenty four male SD rats were given 25% ethanol containing water (ad lib, p.o.) and divided into 3 groups; ethanol treated control group (EtOH), ethano1+3% S. clava (EtOH+SC), and ethano1+3% S. plicata (EtOH+SP). After 6 weeks, the supplementation of S. clava reduced the plasma ALT, ALP and LDH activities significantly (p<0.05), while S. plicata induced significant decrease in the plasma LDH activity only. The comet assay was employed to quantify the alcohol-induced DNA damage in rat hepatocytes and leucocytes. A significant protective effect on hepatic and leucocytic DNA damages was observed in S. clava or S. plicata supplemented groups compared to the EtOH control group. The hepatic DNA damage was correlated positively with plasma ALP and LDH activities. These results demonstrated that S. clava or S. plicata supplementation protected alcohol-induced hepatic and leucocytic DNA damage.

• The Journal of Engineering Geology
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• v.23 no.1
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• pp.29-36
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• 2013

The application of appropriate rehabilitation methods can improve the efficiency of clogged wells and extend their life. In this paper, we study the feasibility of well cleaning using high-voltage pulsed discharge, in which electrical energy is used to produce impulsive pressure in water, in contrast to conventional methods that employ chemical or pneumatic energy sources. This technique utilizes the compressive shock wave generated by the expansive force of hot, dense plasma that is produced during a pulsed discharge in the gap between electrodes immersed in water. Compared with conventional techniques, this method is simple, and easy to handle and control. Using a capacitive pulsed power system with an electrical energy of 200 J, an impulsive pressure of 10.7 MPa is achieved at the position 6 cm away from the discharge gap. The amplitude of the impulsive pressure was easily controlled by adjusting the charging voltage of the capacitor and was almost linearly proportional to peak discharge current. The technique achieved good results in cleaning feasibility tests with mock-up specimens similar to clogged well screens.

• Analytical Science and Technology
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• v.16 no.2
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• pp.117-124
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• 2003

Oxygen to metal ratio has been measured by wet and dry chemical analysis to study the properties of sintered $UO_2$ pellets and $U_3O_8$ in the lithium reduction process of spent pressurized water reactor fuels. Uranium dioxide pellets simulated for the spent PWR fuels with burnup values of 20,000~60,000 MWd/MtU were prepared by mixing $UO_2$ powder and oxides of fission product elements, pelleting the powder mixture and sintering it at $1,700^{\circ}C$ under a hydrogen atmosphere. For wet chemical analysis, the simulated spent fuels were dissolved with mixed acid (10 M HCl : 8 M $HNO_3$, 2.5 : 1, v/v) using acid digestion bomb technique. The total amount of uranium and fission products added in the simulated spent fuels were measured using inductively coupled plasma atomic emission spectrometry. Weight change of the simulated fuel during its oxydation was measured by thermogravimetry and then the O/M ratio result was compared to that obtained by wet chemical analysis. Influence of $Mo_{0.4}-Ru_{0.4}-Rh_{0.1}-Pd_{0.1}$, quaternary alloy, on the determination of O/M ratio was investigated.

• Analytical Science and Technology
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• v.11 no.4
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• pp.271-280
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• 1998

Rice flour reference materials were prepared from the unpolished rice grown in Korea and certified for elemental composition. The reference materials consist of two samples containing normal and high level. The reference material at elevated level was prepared by spiking to the normal rice flour six toxic elements of As, Cd, Cu, Cr, Hg, Pb with $1.0{\mu}g/g$ on a dry weight basis. Homogeneity of the prepared materials was evaluated through the determination of Ca, Cu, Fe, Mn, Zn by instrumental neutron activation analysis (INAA) and atomic absorption spectrometry (AAS). Small variance of elemental composition among interbottled samples assured homogeneity of the prepared materials. The materials were decomposed by high pressure digestion and microwave digestion method. INAA, AAS, inductively coupled plasma-atomic absorption spectrometry (ICP-AES), ICP-mass spectrometry (MS) and vapour generation techniques were employed to analyze the reference materials. From this independent analytical results, the certified or reference values are determined for As, Ca, Cd, Cr, Cu, Fe, Hg, K, Mg, Mn, Mo, Na, P, Pb, Se, Zn.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.307-307
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• 2010

최근 유한연료의 고갈로 인해 세계 유가가 불안정 됨으로서 대체 에너지에 대한 연구가 많이 진행 되고 있다. 특히 압전 소자를 이용한 에너지 하베스팅은 압전 역효과를 이용한 것으로서 주변에서 무의미하게 버려지는 진동이나 바람, 열 에너지를 실 생활에 사용할 수 있는 전기 에너지로 변환할 수 있는 유망한 기술 중 하나이다. 이러한 에너지 하베스팅 기술은 일본과 같은 선진국에서 이미 지하철 및 일반 다리와 같이 진동이 극히 많은 곳에서 응용되고 있다. 이러한 에너지 하베스팅 기술을 응용 하려면 전압출력 계수($g_{33}$)가 높아야 한다. 이것은 압전 d 상수와 유전상수에 영향을 많이 받는 것으로 알려져 있다. 현재가지 응용되는 압전 하베스팅 조성은 Pb(Zr,Ti)$O_3$ (PZT)를 기초로한 세라믹이 응용되고 있다. Pb(Zr,Ti)$O_3$ (PZT) 세라믹은 Morpohotropic phase boundary(MPB)에서 전기기계 결합계수 (kp) 와 기계적 품질계수 (Qm) 이 각각 0.5와 500으로 우수한 특성을 나타낸다. 또한 큐리온도 (Tc) 도 $400^{\circ}C$로 온도 안정성 또한 높다. 하지만 $1000^{\circ}C$ 이상에서 소결하는 PbO는 소결 중 급격한 휘발로 환경적 오염 뿐 아니라 특성의 저하를 야기시킨다. 그래서 몇몇 나라에서는 그 사용을 제한하고 점차적으로 사용을 줄여 나가고 있는 동시에 PbO가 첨가되어 있지 않은 Lead-Free 세라믹의 연구가 많이 진행되고 있다. Lead-Free 세라믹 중 alkaline niobate를 기초로 한 페로브스카이트 구조의 ($Na_{0.5}K_{0.5})NbO_3$ (NKN) 은 PbO를 기초로 한 세라믹을 대체할 유망한 후보자 중 하나이다. 하지만 NKN세라믹의 K 성분의 조해성 및 고온에서의 휘발로 인해 일반 적인 소결 방법으로는 고밀도의 세라믹을 얻기 매우 어렵다. 그래서 Hot pressing, Hot forging, RTGG(Reactive Template Grain Growth), SPS(Spark plasma Sintering)와 같은 특별한 소결 법을 이용하거나 $K_8CuNb_4O_{23}$(KCN) 이나 $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$(KCT) 등을 첨가하여 그 소결성을 향상 시키는 방법도 있다. 또한 압전 d상수를 향상 시키기 위해 $Nb_2O_5$나, $La_2CO_3$, $CeO_2$, $Li_2CO_3$ 등을 치환함으로써 압전 d상수를 향상 시켜 전압출력 계수를 높이는 연구 또한 많은 보고가 되어 있다. 특히 $Li_2CO_3$의 첨가는 일반 적인 소결 방법으로도 밀도의 조밀함을 향상 시켜 그에 따른 높은 유전율과 전기기계 결합계수, 압전 d상수를 가져 많은 연구가 되어지고 있다. 그래서 본 연구에서는 일반적인 ($K_{0.5}N_{0.5})_{1-x}Li_x(Nb_{0.96}Sb_{0.04})O_3$ + 0.2mol%$La_2O_3$ + 1.2mol%$K_8CuNb_4O_{23}$ 세라믹에 x(=Li) 치환에 따른 유전 및 압전특성을 조사하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.101-105
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• 2006

We fabricated the nano $TiN_x$ by making of reaction between titanium powder and $Si_3N_4$ during planetary milling. The $TiN_x$ powder was sintered by spark plasma sintering machine after mixing with 50 wt% of titanium powder, and the sintered body was heat-treated at $850^{\circ}C$ in order to investigate its hardness property at the elevated temperature. We analyzed crystal structure by XRD. We observed the peaks of $TiN_{0.26}$ and TiN after 10 hours milling, and we observed TiN peak mainly after 20 hours milling. The reacted particle size distribution was investigated by FE-SEM. Increase of milling time, the size of reacted particles was decreased and the $10{\sim}20nm$ size of $TiN_x$ on the surface of titanium and $TiN_x$ was observed after 20 hours milling. The micro-Vickers hardness of mixed sintered body was about $1050kgf/mm^2$.

• Journal of the Mineralogical Society of Korea
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• v.22 no.2
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• pp.163-176
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• 2009

The pyrophyllite deposits located in Jinhae area have been studied through field observations and laboratory works including the X-ray diffraction (XRD), X-ray fluorescence (XRF), Electron probe microanalyzer (EPMA) and Inductively Coupled Plasma (ICP). The pyrophyllite deposits consist of mainly illite, dickite, pyrophyllite, diaspore, chlorite, pyrite and copiapite. According to the mineral assemblages, geological occurrences and alteration modes, the altered rocks can be classified into four types: Type A; quartz with silicifictaion, Type B; quartz + illite with illitization, Type C; quartz + dickite + illite with kaolin alteration, Type D; pyrophyllite + illite + dickite + diaspore with pyrophyllite alteraion. Rocks in Type A, which is generated by silicifictaion, have high $SiO_2$ contents more than 90 wt% and distinctive equigranular textures with microcrtstalline quartz. The pyrophyllites from the study area belong to 2M polytype. The host rocks of the pyrophyllite ore in this mine are rhyolitic rock, andecitic tuff and volcanic breccia. The alteration products seem to be controlled by the different lithology of the host rocks. The hydrothermal solution formed the deposits would be inferred to the acidic and have relatively high ionic activity of hydrogen and silica judging from alteration mineral assemblage. Pyrophyllite alteraion zone is generated by highest temperature condition of all alteration zone.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.3-4
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• 1999

최근 산업이 고속도화, 고능률화 및 고정멸화의 추세로 발전함에 따라 우수한 내마모성, 인성, 고온 안정성 및 내구성을 갖는 공구 및 금형을 요구하게 되었다. 그러나 이와같은 성질들은 어떤 단일 재료에서는 얻을 수 없으며 적당한 기판공구나 금혈위에 내마모성 보호피막을 coating함으로 비교적 저렴하게 얻을 수 있다. 화학증착법으로 TiC, TiN등을 증착시킬때에는 $1000^{\circ}C$정도의 반응온도가 필요하며 이러한 증착온도는 모재가 초경합금일때는 문제가 안되나 강재일 경우 모재의 연화와 칫수변화의 문제를 야기시킨다. 최근에는 플라즈마를 사용하여 증착반응온도를 $550^{\circ}C$ 이하로 낮추는 플라즈마 화학 증착볍(PACVD)이 대두되고 있다. 그러나 이 방법어서 는 뚱착하려는 금속원소가 TiCl4의 형태로 공급되고 있으므로 생성된 층이 염소를 포함하고 있다. 이 층에 잔존하는 염소는 층의 기계적 성질을 저하시키고 층내의 stress를 유발시킨다. 또한 HCI개스의 생성으로 인하여 펌프 및 장비의 부식이 촉진 된다 이러한 결점을 극복하기 위하여 금속유기화합물 전구체(metallo-organic precursor)로 $TiCl_4$를 대체하고자 하는 연구가 활발하게 진행되고 있으며 본 연구실에서 이에 대하여 연구한 결과를 소개하고자 한다. diethylamino titanium을 전구체로 사용하여 $H_2,\;N_2,\;Ar$분위기하에서 pulsed d.c.를 사용하는 MO-PACVD에 의하여 $150~250^{\circ}C$의 저온에서 Al 2024 기판에 TiCN층 형 성을 하였다. 전구체 증발온도는 $74~78^{\circ}C$의 온도범위어야 하며 고경도의 코탱층은 54% duty, 14.2kHz, 450V의 조건에서 얻어졌으며 duty, 주파수, 전압이 증가함에 따라 경도는 저하되었다. 이때의 표면 morphology를 SEM으로 조사한바 dome structure가 크게 발달되었음을 알 수 있었다. 본 실험의 온도 범위내에서 얻은 TiCN 증착반응의 활성화에너지는 7.5Kcal/mol이었다. 증착된 TiCN층은 우수한 내마모섣을 나타내었으며 스크래치테스트 결과 17N의 엄계하중을 나타내었다. 본 연구에서 변화 시킨 duty, 주파수, 전압의 범위에서는 층의 밀착력은 크게 변화하지 않았다. titanium isopropoxide를 전구체로 사용하여 Hz, Nz 분위기하에서 d.c.를 사용하는 MO-PACVD에 의하여 Ti(NCO) 코팅층을 SKDll, SKD61, SKH9 공구강에 형성시키는 공정을 개발하였다. 최적의 Ti(NCO) 코탱층을 얻기 위해 유입전구체 부피%의 양은 향착압력의 5%를 넘지 않아야 되고 수소와 젤소 가스비가 1:1일 때 가장 높은 코팅층의 경도값을 나타내었다. 수소와 질소 가스비가 3:7일 때 TiFeCr(NCO)의 복화합물 코팅층이 형성됨을 알 수 있었고 500t의 증착온도에서 얻은 Ti(NCO) 코팅층이 높은 경도값과 좋은 내식성을 나타내었다. 또한 이와같은 Ti(NCO) 코팅공정과 본 실험실에서 개발한 확산층만 형성시키는 plsma nitriding 공정을 결합하여 복합코탱층을 형성하였는데 이 복합코팅층은 고경도와 우수한 내마모성, 내식성 뿐만 아니라 10)N 이상의 뛰어난 밀착력을 나타내었다. 현재 많이 사용되고 있는 PVD법은 step coverage가 좋지 않은 점과 cost intensive p process라는 단점이 있다. MO-PACVD법은 이러한 문제를 해결할 수 있는 방법으로서 앞으로 지속적인 도전이 요구되는 분야이다.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.443-450
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• 1993

Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.