• Title/Summary/Keyword: 갈륨

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Optimization of Device Process Parameters for GaAs-AlGaAs Multiple Quantum Well Avalanche Photodiodes Using Genetic Algorithms (유전 알고리즘을 이용한 다중 양자 우물 구조의 갈륨비소 광수신소자 공정변수의 최적화)

  • 김의승;오창훈;이서구;이봉용;이상렬;명재민;윤일구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.241-245
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    • 2001
  • In this paper, we present parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for image capture mechanism in high-definition system. Even under flawless environment in semiconductor manufacturing process, random variation in process parameters can bring the fluctuation to device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model was then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturign, and also increase production efficiency.

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Evidence of Material-dependent and Temperature- dependent Quenching Rates by Infrared Imaging in S.I. GaAs (반절연 갈륨비소의 적외선 영상에 의한 웨이퍼성장조건 및 온도종속 퀀칭율 증명)

  • 강성준
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.7
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    • pp.469-473
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    • 2003
  • The effect of photoquenching on infrared image of the EL2 center in semi-insulating(S.I.) GaAs has been studied using near infrared transmission techniques. Particular interest is devoted to as-grown and annealed samples of undoped S.I. GaAs. It is found that the quenching mechanism is different in each sample and also the quenching rate is dependent on the materials and the quenching temperature which is somewhat inconsistent with other existing publications.

Determination of Gallium by differential Pulse Adsorptive Stripping Voltammetry (펄스차이 흡착법김전압전류법에 의한 갈륨 정량)

  • Se Chul Sohn;Tea Yoon Eom
    • Journal of the Korean Chemical Society
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    • v.36 no.6
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    • pp.889-893
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    • 1992
  • A very sensitive adsorptive stripping voltammetric method is studied on the gallium-morin complex at a hanging mercury drop electrode (HMDE) in 0.1 M acetate buffer solution. The effects of various analytical conditions are discussed on the reduction peak current of the adsorbed complex on the suface of HMDE. Interferences by other trace metals and surfactant are also discussed. Detection limit is 1.7 nM of gallium with 60 seconds deposition time, and the relative standard deviation (n = 7) at 4 ${\mu}$g/l gallium is 2.8%.

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A Study on the Nonlinear and Linear Analysis of Microwave Diode Mixer (마이크로波 다이오드 混合器의 非線形 및 線形解析에 關한 硏究)

  • Park, Eui-Joon;Park, Cheong-Kee
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.4
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    • pp.7-15
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    • 1989
  • A technique is suggested which enables the large signal current and voltage waveforms to be determined for a GaAs Schottky-Barrier diode mixer by extracting the algorithm for the nonlinear circuit analysis from the Gauss-Jacobi relaxation and the application of the Harmonic Balance Technique. Both the nonlinear and linear steps of the analysis are included. This analysis permitts accurate determination of the conversion loss for microwave mixer and the computer simulation provides an method applicable to MMIC design. The validity of the nonlinear and linear analysis is confirmed by comparing the simulation results with experimental data of the conversion loss.

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질화물 계 발광다이오드의 광추출효율 향상을 위한 나노임프린트 리소그래피 공정

  • Byeon, Gyeong-Jae;Hong, Eun-Ju;Park, Hyeong-Won;Lee, Heon
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.27.2-27.2
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    • 2009
  • 현재 질화물 계 발광다이오드는 액정소자의 백라이트유닛, 모바일폰, 차량용램프, 교통신호등 등 다양한 장치의 광원으로 사용되고 있으며, 그 응용분야는 앞으로도 크게 확대되는 추세에 있다. 이는 발광다이오드의 저전력, 장수명, 친환경적인 장점에 의한 것으로, 일반 조명용 광원으로 사용하기 위한 기술개발이 활발히 진행 중이다. 하지만 질화물 계 발광다이오드를 미래의 조명용 광원으로 사용하기 위해서는 광출력이 보다 향상되어야 한다. 발광다이오드의 광출력을 저하시키는 요인으로는 다양한 문제점이 있지만 특히 낮은 광추출특성으로인한 광출력저하 문제를 해결해야 한다. 본 연구에서는 질화물 계 발광다이오드의 광추출특성을 향상시키기 위해서 나노임프린트 리소그래피 공정을 도입하였다. UV 나노임프린트 리소그래피 공정을 통해서 p형 질화갈륨 및 인듐주석산화물 투명전극 층에 sub-micron 급 광결정패턴을 형성하였으며, 광루미네선스와 전기루미네선스 측정을 통하여 광결정패턴으로 인한 광출력 특성을 분석하였다.

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Study of the Multigigabit Multiplexer Design (기가주파수대 멀티플렉서 설계에 관한 연구)

  • 김학선;최병하;이형재
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.15 no.2
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    • pp.147-154
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    • 1990
  • A 4:1 Time Division Multiplexer(MUX) had been designed in using GaAs Source Coupled FET Logic(SCFL), Designed Multiplexer uses a time division frequency divider and two stage of singnal combining 2:1 multiplexer. The performance of the multiplexer is verified by PSPICE simulation. Designed circuit operates up to 12.5Gbit/s with a power dissipation of 192mW. These performance are more advanced than other reported multiplexer in the speed and power dissipation.

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Effects of Cu impurity on the switching characteristics of the optically controlled bistable semiconductor switches (광제어 쌍안정 반도체 스위치에서 구리 불순물이 스위치특성에 미치는 영향)

  • 고성택
    • Electrical & Electronic Materials
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    • v.7 no.3
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    • pp.213-219
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    • 1994
  • Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

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고효율 수직형 발광다이오드용 TiN/Al/질소극성 n형 질화갈륨 오믹 전극 연구

  • Jeon, Jun-U;Hong, Hyeon-Gi;Jeong, Sang-Yong;Kim, Hyeon-Su;Kim, Gyeong-Guk;Seong, Tae-Yeon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.50-50
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    • 2008
  • 고성능 수직형 발광다이오드를 위해 저저항을 가지는 TiN/Al 오믹 전극을 개발하였다. 열처리 전에는 ${\sim}10^{-4}{\Omega}cm^2$의 컨택저항을 보였지만, 열처리후에는 TiN/Al 전극과 Ti/Al 전극은 모두 전기적 특성 감소를 보였다. 이 전극들을 시간이 지남에 따라 측정하였을 시에 TiN/Al 전극이 Ti/Al 전극보다 안정함을 보였다. XPS와 SIMS를 이용하여 오믹 형성과 전기적 특성 감소 메커니즘을 분석하였다.

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Establishment and application of standard-RSF for trace inorganic matter mass analysis using GD-MS (GD-MS 분석 장비를 활용한 극미량 무기물 질량 분석을 위한 표준RSF 구축 및 응용)

  • Jang, MinKyung;Yang, JaeYeol;Lee, JongHyeon;Yoon, JaeSik
    • Analytical Science and Technology
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    • v.31 no.6
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    • pp.240-246
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    • 2018
  • The present study analyzed standard samples of three types of aluminum matrix certified reference materials (CRM) using GD-MS. Calibration curves were constructed for 13 elements (Mg, Si, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ga, Sn, and Pb), with the slope representing the relative sensitivity factor (RSF). The x- and y-axes of the calibration curve represented ion beam ratio (IBR) and the authenticated value of the standard sample, respectively. In order to evaluate precision and linearity of the calibration curve, RSD and the coefficient of determination were calculated. Curve RSD for every element reflected high precision (within 10 %). For most elements, the coefficient of determination was ${\geq}0.99$, indicating excellent linearity. However, vanadium, nickel, and gallium curves exhibited relatively low linearity (0.90~0.95), likely due to their narrow concentration ranges. Standard RSF was calculated using the slope of the curve generated for three types of CRM. Despite vanadium, nickel, and gallium exhibiting low coefficients of determination, their standard RSF resembled that of the three types of CRM. Therefore, the RSF method may be used for element quantitation. Standard iron matrix samples were analyzed to verify the applicability of the aluminum matrix standard RSF, as well as to calculate the RSD-estimated error of the measured value relative to the actual standard value. Six elements (Al, Si, V, Cr, Mn, and Ni) exhibited an RSD of approximately 30 %, while the RSD of Cu was 77 %. In general, Cu isotopes are subject to interference: $^{63}Cu$ to $^{54}Fe^{2+}-^{36}Ar$ and $^{65}Cu$ to $^{56}Fe-Al^{3+}$ interference. Thus, the influence of these impurities may have contributed to the high RSD value observed for Cu. To reliably identify copper, the resolution should be set at ${\geq}8000$. However, high resolutions are inappropriate for analyzing trace elements, as it lowers ion permeability. In conclusion, quantitation of even relatively low amounts of six elements (Al, Si, V, Cr, Mn, and Ni) is possible using this method.

Design of a Highly Integrated Palette-type High Power Amplifier Module Using GaN Devices for DPD Application (질화갈륨 소자를 이용한 DPD용 고집적 팔렛트형 고출력증폭기 모듈 설계)

  • Oh, Seong-Min;Lim, Jong-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.5
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    • pp.2241-2248
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    • 2011
  • This paper describes the design of a palette-type 60watt high power amplifier module using gallium nitride(GaN) devices with high power and efficiency performances for WiMAX and LTE systems. The line-up for the high gain amplifier module consists of the pre-amplifier stage with low power and high gain, 8watt GaN driving amplifier stage, and 60watt GaN high power amplifier stage of Doherty structure with two 30watt GaN devices. The obtained gain is 61.4dB with an excellent gain flatness of ${\pm}$0.075dB over 2.5~2.68GHz. GaN devices and the Doherty structure are adopted for the improvement of high efficiency and output power. The measurement for the fabricated high power amplifier module of palette type is performed using the widely known WiMAX signal all over the world. In the example of RRH(remote radio head) application of the fabricated amplifier module, the measured efficiency is 37~38% with the 10watts of modulated output power. It is shown that when the fabricated amplifier module is activated with a digital predistorter(DPD), the measured ACLR is better than 46dBc under the 10watts of modulated output power.