References
- G. Vincent, D.Bois, A.Chantre, 'Photoelectric memory effect in GaAs', J. Appl. Phys. 53(5), pp. 3643-3649, May. 1982 https://doi.org/10.1063/1.331147
- P.W. Yu, 'Persistent photoluminescence quenching of 0.68-eV emission in undoped semiinsulation GaAs', Appl. Phys. Lett., 44(3), pp. 330-332, Feb. 1984 https://doi.org/10.1063/1.94743
- S. Nojima, 'Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs', J. Appl. Phys. Lett, 58(9), pp. 747-748, Nov. 1985
- G.M. Martin, 'Optical assessment of the main electron trap in bulk semi-insulating GaAs', Appl. Phys. Lett., 42(7), pp. 747-748, Nov. 1981 https://doi.org/10.1063/1.92852
- M.R. Brozel, I. Grant, R.M. Ware, D. J. Stirland, 'Direct observation of the principal deep level(EL2) in undoped semi-insulating GaAs', Appl. Phys. Lett., 42(7), pp. 610-612, Apr. 1983 https://doi.org/10.1063/1.94019
- M.Castagne, J.P. Fillard, J.IBonnafe, 'EL2 related levels in GaAs-SI : transmission and dispersion in infrared imaging', Solid. Stat. Commun., 54(7), pp. 653-656, 1985 https://doi.org/10.1016/0038-1098(85)90099-7
- J.P. Fillard, 'Reconnaissance des defauts et traitement images pour les composes III-V', Annales des telecomm, 42(3-4), pp. 149-180, march. 1987
- S. J. Kang 'Contribution a l'etude du centre EL2 dans GaAs semi-isolant par photoextinction des images de transmission infra-rouge', Ph. D. Dissertation, U.S.T.L(Montpellier II, France), march, 1990
- S. J. Kang, 'New infrared imaging technique for evaluation of compound semiconductor crystals', Patent no.138855(23. Feb. 1998). Korea
- S. J. Kang, 'A Method for Evaluating the Temperature Coefficient of a Compound Semiconductor Energy Gap by Infrared Imaging Technique' Journal of the Institute of Electronics Engineers of Korea, vol. 38-SD, No.5 pp. 338-346, May, 2001
- J. C. Parker, R. Bray. 'Analysis of photoassisted thermal recovery of metastable EL2 defects in GaAs', Phys. Rev. B 37(11), pp. 6368-6376 Apr. 1988 https://doi.org/10.1103/PhysRevB.37.6368
- J.P Fillard, P.Gall, S.J.Kang, M.Castagne, J.Bonnafe, 'The role of EL2 in the infrared transmission images of defects in semiinsulating GaAs', Proceedings of the 5th conference on semi-insulating III-V materials pp. 543-548 Malmo, Sweden, 1-3 June 1988