• Journal of the Korean Society of Radiology
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• v.3 no.1
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• pp.11-15
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• 2009

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

• Journal of the Korean Society of Radiology
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• v.10 no.8
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• pp.565-569
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• 2016

Recently, a use of linear accelerator with a multi-leaf collimator(MLC) for radiation therapy is increasing. The importance of quality assurance (QA) for the linear accelerator is emphasized as the side effects of the inaccurate delivery of the radiation beam has been increased according to the high dose irradiation technique. In this study, The $HgI_2$ and $PbI_2$ photoconductor layer samples of $400{\mu}m$ thickness were fabricated using sedimentation method among particle-in-binder technology. From the fabricated samples, the electrical properties(dark current, output current, response properties and linearity) were investigated. From the experimental results, $HgI_2$ has good charge signal generation and linearity. Finally, from the signal response results about various thickness of $HgI_2$ sensor, the signal creation efficiency of $400{\mu}m$ thickness of $HgI_2$ sensor has the highest value and the excellent reproducibility below ${\pm}2.5%$.

• Research in Plant Disease
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• v.15 no.3
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• pp.254-258
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• 2009

An isolate of Cucumber mosaic virus (CMV), called as Lag-CMV, was identified from Lagenaria leucantha var. gourda showing mosaic symptom, and its properties was compared to Fny-CMV (subgroup IA) and As-CMV (subgroup IB) by host reaction in several indicator plants, dsRNA analysis, RT-PCR analysis, restriction enzyme profile of the PCR products and nucleotide sequence of coat protein gene. Lag-CMV was similar to As-CMV used as a control CMV by the induced chlorotic spot on inoculated leaves and mosaic symptoms on upper leaves of N. tabacum. cv. Xanthi nc. In the cucumber and zucchini squash, Lag-CMV and As-CMV induced a mild mosaic symptoms than that of Fny-CMV. Size and shapes of local lesions on Chenophodium amaranticolor and Vigna unguiculata induced by Lag-CMV was similar those by Fny-CMV or As-CMV. In experiments of dsRNA profiles and RT-PCR analysis of coat protein gene, Lag-CMV was come within subgroup I CMV. Moreover, restriction enzyme analysis using EcoRI, SalI, MspI, XhoI, and HindIII of the RTPCR products and nucleotide sequence analysis of the coat protein gene showed that Lag-CMV belong to a member of CMV subgroup IB of the same to As-CMV.

• Korean Journal of Organic Agriculture
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• v.17 no.3
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• pp.357-370
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• 2009

This experiment was conducted to investigate the effects of compost leachate and concentrated slurry on growth of tomato in hydroponic culture. In process of composting, compost leachate was produced water was through a saturated compost heap. The concentrated slurry was produced by filtration and concentration by membrane process. Filtration of pig slurry was necessary to prevent the hose clogging in hydroponics culture. The treatments of this experiment were consisted of seven different liquid fertilizers; compost leachate(CL), concentrated pig slurry (CS), compost leachate+byproduct(CL+BP), concentrated pig slurry+byproduct(CS+BP), compost leachate 50%+nutrient solution50%(CL+NS), concentrated pig slurry 50%+nutrient solution50%(CS+NS) and nutrient solution(NS) for tomato based on nitrogen content. The chemical nutrient solution was the solution of National Horticulture Research Station for the growth of tomato. The concentration of nutrient solution was adjusted a range of $1.6{\sim}2.0 mS/cm$ in EC. 1. The compost leachate and concentrated pig slurry were low in phosphorus(P), calcium(Ca), magnesium(Mg), but rich in potassium(K). 2. Plant height, SPAD value of tomato was highest in the plot of CS+NS, intermediate in CL, CS+BP, and lowest in 100% concentrated pig slurry. 3. The tomato yield of compost leachate plot was 91% compared with inorganic nutrient solution. The compost leachate solution could be used as a nutrition solution of tomato in organic hydroponics. 4. The growth including plant height, SPAD value, fruit number, fruit weight and yield of tomato in the CL 50%+NS 50% was similar in the control. In conclusion, the mixture solution of 50% pig slurry and 50% nutrient solution could be used as a nutrition solution of tomato hydroponic culture.

• Korean Journal of Organic Agriculture
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• v.17 no.3
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• pp.393-403
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• 2009

This study was conducted to investigate the productivity of Hanwoo steers by feeding self-product organic rice straw and concentrates(conventional, T1 and organic T2). Sixteen Hanwoo steers(8 months on the average) were randomly assigned to two treatment groups. Feeding trail was carried out in 2 treatment(8 heads/ treatment) by Hanwoo steers for 600 days form 8 to 28 months in age. The range of average daily gains of T1 and T2 were 0.76 to 0.77kg in the growing stage, 0.93 to 0.90kg in the first fattening stage, 0.99 to 0.84kg in the middle fattening stage, and 0.59 to 0.64kg in the latter fattening, respectively, and the gains for overall period was higher in T1 than in T2. Concentrates and total digestive nutrients(TDN)(T1) intakes per unit of kg gains were higher than T2 without significant difference. In carcass characteristics, the carcass weight in T1 were higher about 5% than in T2. According to the above results, it may be concluded that dry matter(DM) intakes, crude protein(CP) and TDN contents of feedstuff between treatments was no significant difference. but marbling in T2 score was higher than in T1 about 20%. There were no significant differences rib-eye area, back fat thickness and fat color(p>0.05).

• Journal of the korean veterinary medical association
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• v.20 no.1
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• pp.49-61
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• 1984

The purpose of the experiment was to clarify morphologically normal growth pattern of male reproductive organ in heavy meat breed rooster. The observations were composed of normal growth in weight of whole body, comb, testis and pituitary glands and of hi

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.315-320
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• 2000

We have investigated the crystal structure and electrical properties of Pt/SBT/$ZrO_2$/Si (MFIS) and Pt/SBT/Si (MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$ZrO_2$/Si structure had larger grain than that of SBT/Si structure. $ZrO_2$ film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier by the analysis of AES. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$ZrO_2$/Pt/$SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-volt-age characteristics, the memory windows of Pt/SBT (210 nm)/$ZrO_2$ (28 nm)/Si structure were in the range of 1~l.5 V at the applied voltage of 4~6 V. The current densities of Pt/SBT/ZrO$_2$/Si with as -deposited Pt electrode and annealed at $800^{\circ}C$ in $O_2$ambient were $8\times10^{-8} A/\textrm{cm}^2$ and $4\times10^{-8}A/\textrm{cm}^2$ , respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.188-198
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• 1993

We have developed a technique for growing thin oxides (6~10 nm) by the Last step TCA method. N-channel metal-oxide-semiconductor (n-MOS) capacitor and n-channel metal-oxide-semiconductor field-effect transistor's (MOSFET's) having a gate oxide with chlorine incorporated $SiO_2/Si$ interface have been analyzed by electrical measurements and physical methods, such as secondary ion mass spectrometry (SIMS) and electron spectroscopy for chemical analysis (ESCA). The gate oxide grown with the Last strp TCA method has good characteristics as follows: the electron mobility of the MOSFET's with the Last step TCA method was increased by about 7% and the defect density at the $SiO_2/Si$ interface decreases slightly compared with that with No TCA method. In reliability estimation, the breakdown field was 18 MV/cm, 0.6 MV/cm higher than that of the gate oxide with No TCA method, and the lifetime estimated by TDDB measurement was longer than 20 years. The device lifetime estimated from hot-carrier reliability was proven to be enhanced. As the results, the gate oxide having a $SiO_2/Si$ interface incorporated with chlorine has good characteristics. Our new technique of Last step TCA method may be used to improve the endurance and retention of MOSFET's and to alleviate the degradation of thin oxides in short-channel MOS devices.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes