• 한국가스학회지
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• 제15권3호
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• pp.74-78
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• 2011

반도체용 특수가스인 BF3는 반도체 생산공정에서 웨이퍼의 플라즈마 식각 공정과 화학증기증착(CVD : Chemical vapor deposition) chamber 세정공정 등에 사용되며, $BF_3$ 가스는 boron Ion Implant 공정에서 p-type doping을 위한 원료 등으로 사용된다. 본 연구에서는 간단한 공정으로 $NaBF_4$ 와 $KBF_4$의 열분해를 통하여 $BF_3$ 가스의 생산에 대해서 연구 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.135.2-135.2
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• 2010

Carbon nanotube(CNT) has been spotlighted as a promising candidate for catalyst support material for PEMFC (proton exchange membrane fuel cell). The considerable properties of CNT include high surface area, outstanding thermal, electrical conductivity and mechanical stability. In this study, to fully utilize the properties of CNTs, we prepared directly oriented CNT on carbon paper as a catalyst support in the cathode electrode. The CNT layer was prepared by a chemical vapor deposition(CVD) process. And the Pt particles were deposited on the CNT oriented carbon paper by impregnation and eletro-deposition method. The potential advantages of directly oriented CNT on carbon paper can include improved thermal and charge transfer through direct contact between the electrolyte and the electrode and enhanced exposure of Pt catalyst sites during the reaction.

• 한국세라믹학회지
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• 제32권4호
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• pp.489-497
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• 1995

The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{\circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{\circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.267-267
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• 2010

The structural and electrical properties of microcrystalline silicon films were investigated by hot wire chemical vapor deposition(HWCVD) often called catalytic chemical vapor deposition(Cat-CVD). The Si microcrystalline phase is easily controlled by changing the rate of the silane concentration of $SiH_4$ to $H_2$ during deposition. The Structural property was observed by Raman and SEM. Photo-conductivity and dark conductivity, and photo-sensitivity were observed by Sunsimulator (AM 1.5 illumination). The film color was changed by the variation of silane concentration. HWCVD is useful for the formation of Si thin films for solar cell and needs further commercialized development for mass production.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.201-202
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• 2003

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

• 대한치과교정학회지
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• 제36권6호
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• pp.451-464
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• 2006

본 연구는 항 교정장치의 개발에 도움이 되고자 이산화티탄 광촉매의 코팅 시 안정적이고 효과적인 방법을 찾기 위하여 시행되었다. 시판되고 있는 교정용 와이어와 브라켓에 sol-gel법, CVD (Chemical Vapor Deposition)법 및 PE-CVD (Plasma Enhanced-CVD)법으로 이산화티탄을 각각 코팅한 다음 각 방법으로 코팅된 이산화티탄 박막의 특성을 알아보고자 주사전자현미경을 이용하여 각 시편의 코팅박막 표면의 거칠기를 관찰하였고 adhesive tape pull test를 이용하여 코팅박막의 접착강도를 측정하였다. 메틸렌블루용액에 각 시편을 침지시킨 후 시간경과에 따른 메틸렌블루용액의 농도변화 측정을 통해 코팅박막의 분해능을 평가하였으며 불화나트륨 용액에 각 시편을 침지시킨 후 주사전자현미경을 이용하여 표면부식 정도를 관찰함으로써 불소화합물에 대한 내부식성을 평가하여 다음과 같은 결과를 얻었다. 코팅박막의 표면은 CVD법 및 PE-CVD법이 sol-gel법이나 코팅되지 않은 시편에 비해 더 매끄러웠다. 코팅박막의 접착강도는 PE-CVD법이 가장 높았고, CVD법, sol-gel법의 순으로 낮게 나타났다. 코팅박막의 메틸렌블루 분해능은 PE-CVD법이 가장 높았고, CVD법, sol-gel법의 순으로 낮게 나타났다. 코팅박막의 불소화합물에 대한 내부식성은 CVD법 및 PE-CVD법이 sol-gel법에 비해 높게 나타났다. 이상의 결과는 교정용 와이어 및 브라켓의 이산화티탄 광촉매 코팅 시 CVD법 및 PE-CVD법이 sol-gel법보다 적절한 방법임을 시사하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.192-195
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• 2019

Single-crystal diamond obtained by chemical vapor deposition (CVD) exhibits great potential for use in next-generation power devices. Low defect density is required for the use of such power devices in high-power operations; however, plastic deformation and lattice strain increase the dislocation density during diamond growth by CVD. Therefore, characterization of the dislocations in CVD diamond is essential to ensure the growth of high-quality diamond. In this work, we analyze the characteristics of the dislocations in CVD diamond through synchrotron white beam X-ray topography. In estimate, many threading edge dislocations and five mixed dislocations were identified over the whole surface.