• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.144-148
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• 2006

$CoGa_{0.1}Fe_{1.9}O_4$ nanoparticles have been prepared by a sol-gel method. The structural and magnetic properties have been investigated by XRD, SEM, VSM and $M\ddot{o}ssbauer$ spectroscopy. $CoGa_{0.1}Fe_{1.9}O_4$ powder that was annealed at $250^{\circ}C$ has spinel structure and behaved superparamagnetically. The estimated size of superparammagnetic $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle is around 10 nm. The hyperfine fields at 4.2 K f3r the A and B patterns were found to be 518 and 486 kOe, respectively. The blocking temperature $(T_B)$ of superparammagnetic $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle is about 250 K. The magnetic anisotropy constant of $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle was calculated to be $3.0X10^5\;ergs/cm^3$. $CoGa_{0.1}Fe_{1.9}O_4$ nanoparticle was annealed at $250^{\circ}C$ will be used to candidate for biomedicine applications as magnetic carriers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.432-436
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• 2006

The $ZnGa_2O_4$ and Mn, Cr-doped $ZnGa_2O_4$ Phosphors were synthesized through conventional solid state reactions. The XRD patterns show that the $ZnGa_2O_4$ has a (3 1 1) main peak and a spinel phase. The emission wavelength of $ZnGa_2O_4$ showed main peak of 420 nm and maximum intensity at the sintering temperature of $1100^{\circ}C$. In the crystalline $ZnGa_2O_4$, the Mn shows green emission (510 nm, $^4T_1-^6A_1$) with a quenching concentration of 0.6 mol%, and the Cr shows red emission (705 nm, $^4T_2-^4A_2$) with a quenching concentration of 2 mol%. These results indicate that $ZnGa_2O_4$ Phosphors hold promise for potential applications in field emission display devices with high brightness operating in full color regions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.334-337
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• 2002

In this study, the microstructure, dielectric and piezoelectric properties of $0.15Pb(Ni_{1/3}Nb_{2/3})O_3-0.85(PbZr_{0.5}Ti_{0.5})O_3$(0.15PNN-0.85PZT) ceramics having compositions near the morphotropic phase boundary(MPB) was investigated with respect to the variation of $Y_2O_3$ and $Ga_2O_3$ addition amount. The dielectric properties increased and piezoelectric properties decreased with increasing the amount of $Ga_2O_3$. The solubility limit of $Y_2O_3$ is 0.5mol% in this system. The electro-mechanical coupling factor$(K_p)$ and dielectric constant(${\varepsilon}_r$) were 58.6% and 1755 when the amount of $Y_2O_3$ are 0.5mol%.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3261-3266
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• 2014

A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.22-27
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• 1992

The cyclic voltammogram characteristics at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics/(($10^{-3}$M KCI + p-Si powders) and /(($10^{-4}$M CsNO$_3$ + n-GaAs powders) suspension interfaces have been studied using the microelectrophoresis and the cyclic voltammetric method. The negatively charged ions are specifically absorbed on the virgin and the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics surfaces. The zeta potentials of the p-Si and n-GaAs colloidal semiconductors are + 41mV and -44.8mV, respectively. The magnetization effects act as potential barriers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The positivelely charged p-Si and the negatively charged n-GaAs colloidal semiconductors act as potential barriers at the virgin SrO${\cdot}6Fe_{2}O_{3}$ interfaces. On the other hand, the charged p-Si and n-GaAs colloidal semiconductors act as potential barrier scavengers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The magnetization effects and the charged colloidal semiconductor effects are irreversible and interdependent.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.350.2-350.2
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• 2014

We investigated the structural and optical evolution of Ga2O3 thin films on glass substrates deposited using radio frequency magnetron sputtering. Initially, amorphous Ga2O3 thin film is grown, and then, surface humps and nanowire (NW) bundles are gradually formed as the film thickness increases. The surface humps are Ga-rich and provide nucleation sites for NWs through a self-catalytic vapor-liquid-solid mechanism with self-assembled Ga droplets. Both the surface humps and the NWs induce variation of the optical properties such as the optical bandgap and refractive index by absorbing light in the ultraviolet region.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.107-108
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• 1992

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.851-854
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• 2001

Europium-activated Ga$_2$O$_3$powders were prepared by modified "Pechini method" from mixed aqueous solutions of gallium nitrate, europium nitrate, ethylene glycol and citric acid. The formation process and structure of the phosphor powders were investigated by means of TG/DTA, XRD and SEM. It has been found that the phosphor powders were amorphous up to 50$0^{\circ}C$ and changed into crystalline $\beta$-Ga$_2$O$_3$phase above $600^{\circ}C$. The resulting nano-sized powders were obtained. Red luminescence in emission spectra were observed at room temperature.