• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Korean Journal of Mathematics
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• 제16권1호
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• pp.41-49
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• 2008

We show the existence of a negative solution for the system of the following nonlinear wave equations with critical growth, under Dirichlet boundary condition and periodic condition $$u_{tt}-u_{xx}=au+b{\upsilon}+\frac{2{\alpha}}{{\alpha}+{\beta}}u_+^{\alpha-1}{\upsilon}_+^{\beta}+s{\phi}_{00}+f,\\{\upsilon}_{tt}-{\upsilon}_{xx}=cu+d{\upsilon}+\frac{2{\alpha}}{{\alpha}+{\beta}}u_+^{\alpha}{\upsilon}_+^{{\beta}-1}+t{\phi}_{00}+g,$$ where ${\alpha},{\beta}>1$ are real constants, $u_+={\max}\{u,0\},\;s,\;t{\in}R,\;{\phi}_{00}$ is the eigenfunction corresponding to the positive eigenvalue ${\lambda}_{00}$ of the wave operator and f, g are ${\pi}$-periodic, even in x and t and bounded functions.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.188-192
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• 2007

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.65-68
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• 2007

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

• 호남수학학술지
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• 제27권1호
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• pp.69-76
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• 2005

The aim of this work is to generalize $L_1$-approximation in order to apply them to a discrete approximation. In $L_1$-approximation, we use the norm given by $${\parallel}f{\parallel}_1={\int}{\mid}f{\mid}d{\mu}$$ where ${\mu}$ a non-atomic positive measure. In this paper, we go to the other extreme and consider measure ${\mu}$ which is purely atomic. In fact we shall assume that ${\mu}$ has exactly m atoms. For any ${\ell}$-tuple $b^1,\;{\cdots},\;b^{\ell}{\in}{\mathbb{R}}^m$, we defined the ${\ell}^m_1{w}$-norn, and consider $s^*{\in}S$ such that, for any $b^1,\;{\cdots},\;b^{\ell}{\in}{\mathbb{R}}^m$, $$\array{min&max\\{s{\in}S}&{1{\leq}i{\leq}{\ell}}}\;{\parallel}b^i-s{\parallel}_w$$, where S is a n-dimensional subspace of ${\mathbb{R}}^m$. The $s^*$ is called the Chebyshev center or a discrete simultaneous ${\ell}^m_1$-approximation from the finite dimensional subspace.

• 대한전자공학회논문지SD
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• 제41권11호
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• pp.21-27
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• 2004

본 논문에서는 60 GHz 무선 LAN(wireless local area network) 응용을 위해 0.1 ㎛ Γ-gate pseudomorphic high electron mobility transistor(PHEMT)를 이용하여 V-band용 millimeter-wave monolithic integrated circuit(MIMIC) 저잡음 증폭기를 설계 및 제작하였다. 본 연구에서 개발한 PHEMT의 DC 특성으로 드레인 포화 전류 밀도(Idss)는 450 mA/mm, 최대 전달컨덕턴스(gm, max)는 363.6 mS/mm를 얻었으며, RF 특성으로 전류이득 차단주파수(fT)는 113 GHz, 최대 공진 주파수(fmax)는 180 GHz의 성능을 나타내었다. V-band MIMIC 저잡음 증폭기의 개발을 위해 PHEMT의 비선형 모델과 CPW 라이브러리를 구축하였으며, 이를 이용하여 V-band MIMIC 저잡음 증폭기를 설계하였다. 설계된 V-band MIMIC 저잡음 증폭기는 본 연구에서 개발된 PHEMT 기반의 MIMIC 공정을 이용해 제작되었으며, V-band MIMIC 저잡음 증폭기의 측정결과, 60 GHz에서 S21이득은 21.3 dB, 입력반사계수는 -10.6 dB 그리고 62.5 GHz에서 출력반사계수는 -29.7 dB의 특성을 나타내었다. V-band MIMIC 저잡음 증폭기의 잡음지수 측정결과, 60 GHz에서 4.23 dB의 특성을 나타내었다.

• Journal of applied mathematics & informatics
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• 제18권1_2호
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• pp.497-503
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• 2005

This paper presents characterizations on the independence of the exponential and Pareto distributions by record values. Let ${X_{n},\;n {\ge1}$ be a sequence of independent and identically distributed(i.i.d) random variables with a continuous cumulative distribution function(cdf) F(x) and probability density function(pdf) f(x). $Let{\;}Y_{n} = max{X_1, X_2, \ldots, X_n}$ for n \ge 1. We say $X_{j}$ is an upper record value of ${X_{n},{\;}n\ge 1}, if Y_{j} > Y_{j-1}, j > 1$. The indices at which the upper record values occur are given by the record times {u(n)}, n \ge 1, where u(n) = $min{j|j > u(n-1), X_{j} > X_{u(n-1)}, n \ge 2}$ and u(l) = 1. Then F(x) = $1 - e^{-\frac{x}{a}}$, x > 0, ${\sigma} > 0$ if and only if $\frac {X_u(_n)}{X_u(_{n+1})} and X_u(_{n+1}), n \ge 1$, are independent. Also F(x) = $1 - x^{-\theta}, x > 1, {\theta} > 0$ if and only if $\frac {X_u(_{n+1})}{X_u(_n)}{\;}and{\;} X_{u(n)},{\;} n {\ge} 1$, are independent.

• 한국초전도ㆍ저온공학회논문지
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• 제19권1호
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• pp.30-35
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• 2017

The effects of the crystallographic orientation and sample thickness on the magnetic levitation forces (F) and trapped magnetic field (B) of single grain YBCO bulk superconductors were examined. Single grain YBCO samples with a (001), (110) or (100) surface were used as the test samples. The samples used for the force-distance (F-d) measurement were cooled at 77 K without a magnetic field (zero field cooling, ZFC), whereas the samples used for the B measurement were cooled under the external magnetic field of a Nd-B-Fe permanent magnet (field cooling, FC). It was found that F and B of the (001) surface were higher than those of the (110) or (100) surface, which is attributed to the higher critical current density ($J_c$) of the (001) surface. For the (001) samples with t=5-18 mm, the maximum magnetic levitation forces ($F_{max}s$) of the ZFC samples were larger than 40 N. About 80% of the applied magnetic field was trapped in the FC samples. However, the F and B decreased rapidly as t decreased below 5 mm. There exists a critical sample thickness (t=5 mm for the experimental condition of this study) for maintaining the large levitation/trapping properties, which is dependent on the material properties and magnitude of the external magnetic fields.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.2070-2078
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• 2014

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

• Radiation Oncology Journal
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• 제23권1호
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• pp.9-16
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• 2005

목적 : 원격존기의 전이가 없는 비인강암에서 동시항암화학방사선치료를 시행 받은 환자에서 진단 당시 시행한 양전자단층촬영의 fluorodeoxyglucose (FDG) 섭취정도가 예후에 미치는 영향을 알아보고자 하였다. 대상 및 방법 : 본원에서 원격장기의 전이가 없는 비인강암으로 진단 받고 진단 당시 ($[18^F]$FDG-PET을 시행한 환자는 총 41명이었다. PET 검사는 모두 항암방사선치료 전에 시행되었다. FOG 섭취 정도를 알아보기 위해서 종양 내에서 측정된 최대 standardized uptake value (SUV)를 측정하였다. 결과 : 항암화학방사선지료 후 모든 환자는 완전반응을 보였다. 전체 41명 중에서 10명이 재발하였는데 재발하지 않은 환자의 $SUV_{max}$ 중앙값은 6.48 (range: $2.31\~26.07$)이었고 재발한 환자의 중앙 $SUV_{max}$는 $8.55(2.49\~14.81)$이었다. 양 군 간의 5UV의 차이는 p값이 0.0505로 통계적 차이가 관찰되지 않았다. $SUV_{max}$를 중앙값을 기준으로 나누어 보았을 때 $SUV_{max}$가 높은 환자의 3년 생존율이 통계적으로 유의하게 저조하였다($51\%\;{\nu}91\%$, p=0.0070). 결론 : 원격전이가 없는 비인강암에서 항암화학방사선치료를 시행 받은 환자에서 진단 당시 시행한 FDG 섭취 정도는 예후를 예측하는데 유용할 것으로 생각되었다. 따라서 진단 당시 시행한 FDG-PET에서 SUV가 높은 경우(8 이상)에는 좀더 적극적인 치료가 필요할 것으로 생각하였다.