• Korean Journal of Optics and Photonics
• /
• v.9 no.5
• /
• pp.307-314
• /
• 1998

We have studied the effects of interface on polarization dependence of waveguide and designed the polarization independent 2-dimensional waveguides on InP for arrayed waveguide grating. To figure out the effects of interface on polarization dependence, we have solved the 1-dimensional wave equation using a transfer matrix method. It is shown that the birefringence becomes stronger as the number of interfaces increases. In order to design polarization independent 2-dimensional waveguides, we have used effective index method. The structures considered are ridge type, raised strip type, and buried type waveguide. In the cases of ridge and raised strip type, conventional effective index method was used. In the case of buried type corrected effective index method was used. We have determined the height and width of waveguides such that the waveguides become polarization independent.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.423-423
• /
• 2013

3~5 족 반도체 물질인 phosphorus 화합물 중 대표적인 InAlP 삼종화합물은 작은 굴절률, 큰 밴드갭, GaAs와 lattice 일치 때문에 큰 주목을 받고 있고, p-type high electron mobility transistors(p-HEMT), laser diodes 등의 고속 전자소자 및 광전 소자에 응용이 가능한 매우 중요한 물질이다. 최적의 소자 응용기술을 위해서는, 정확한 광물성 연구가 수행되어야 하지만 InxAl1-xP 화합물에 대한 유전율 함수 및 전자전이점 등의 연구는 미흡한 실정이다. 이에 본 연구에서는 1.5~6.0 eV 에너지 영역에서 각기 다른 In 조성비를 갖는 InxAl1-xP 화합물의 가유전율 함수 ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$와 전자전이점 데이터를 보고한다. GaAs 기판 위에 molecular beam epitaxy (MBE)를 이용하여 InxAl1-xP (x=0.000, 0.186, 0.310, 0.475, 0.715, 0.831, 1.000) 박막을 성장하였고 타원편광분석기를 이용하여 유전율 함수를 측정하였다. 또한 실시간 화학적 에칭을 통하여 시료 표면에 자연산화막을 제거함으로써 순수한 InAlP의 유전율 함수를 측정할 수 있었고, 측정된 유전율 함수를 이차미분하여 In 조성비에 따른 전자전이점을 얻을 수 있었다. 얻어진 전자전이점 값을 이용하여 linear augmented Slater-type orbital method (LASTO) 를 통해 이론적 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전자전이점($E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2'$)의 특성을 정의할 수 있었고, $E_0'$과 $E_2$ 전이점의 에너지 값이 In 조성비가 증가함에 따라 서로 교차함을 발견할 수 있었다. 타원 편광 분석법을 이용한 유전율 함수 및 전자전이점 연구는 InAlP의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스 기술 및 광통신 산업에도 유용한 정보가 될 것이다.

• Korean Journal of Optics and Photonics
• /
• v.5 no.1
• /
• pp.31-36
• /
• 1994

We present a structure of a reflective Fabry-Perot etalon with nonlinear Kerr material (Kerr FP etalon), and report the polarization conversion and the optical bistability of polarization conversion. A device proposed has high polarization conversion ratio, 100% or so, and good/broad optical bistablity for input pump intensity.

• Journal of the Korean Chemical Society
• /
• v.28 no.5
• /
• pp.271-278
• /
• 1984

Ellipsometric and reflectance measurements were made with magneto-optically self-nulling ellipsometer on the iron surface being passivated. The passivation was induced by abruptly changing potential of the mechanically polished high purity iron from the reduction potential to the oxidation potential in basic solutions. From the differences in the optical paramates(${\Delta},\;{\psi}$) and reflectance (R) between the reduced (film-free) and oxidized (film-covered) states, the thickness(${\tau}$) and optical constants (n, k) of the film in the early stage of its formation were computed as functions of pH and time. From the computed values, it was deduced that the properties of the anodic film did not undergo a drastic change with time which would indicate a transformation of the film before effective passivity is attained, and that the film reached its stady state within a few second. The thickness of anodic film was $14\;{\sim}\;23{\AA}$. The anodic films also seemed to have small values of optical absorption coefficient. The film formed in high pH environments had thinner and denser structure than that formed in low pH.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.483-483
• /
• 2013

Latral Composition Modulation (LCM)으로 성장한 InP/GaP 초격자(Superlattice)의 선편광된 광발광(Photoluminescence) 특성을 저온(5 K)에서 측정하였다. LCM 기법은 z-축 방향으로 InP와 GaP를 단층 초격자(monolayer supperlattice)로 성장하는 과정에서 strain에 의해 x-y 평면으로 초격자가 형성되는 특별한 경우이다. 이렇게 성장된 LCM 초격자의 경우 In-rich 영역과 Ga-rich 영역이 교차로 성장되는 구조를 가지며 가전자대역(valence band)에서 무거운 양공과 가벼운 양공의 band mixing 이 일어나게 되어 선평광된 발광특성을 가진다. 우리는 저온 발광실험에서 In-rich 영역과 Ga-rich 영역의 재결합에 의해 나타나는 두 개의 독립된 전이 피크를 측정하였다. 이 두 피크는 [110] 방향의 편광에서 발광 강도가 최대치를 가지며 [1-10] 방향에서 최소값을 가짐을 보였다. 이때 전이 에너지의 경우 [110] 방향에서 [1-10] 방향으로 편광이 바뀔 때 Ga-rich 영역의 전이의 경우 적색편이를 나타낸 반면 In-rich 영역의 경우 청색편이를 보이는 현상을 발견하였다. 이러한 상반된 편이 현상은 서로 다른 3족 물질의 영역에 따라 격자 상수가 바뀌며 tensile strss와 compressive stress에 따른 가전자 대역의 band mixing 변화에 기인하는 것으로 여겨진다.

• Journal of the Korean Chemical Society
• /
• v.23 no.5
• /
• pp.320-324
• /
• 1979

Purple membrane from Halobacterium halobium was incorporated into 7.5% polyacrylamide gels. Absorption and circular dichroic spectra of purple membrane incorporated with gels were obtained at various pH. The spectra of these gels measured at pH 7.0 were essentially identical with those obtained in the aqueous suspension of purple membrane. Acid titration of the gels showed the transition to a form absorbing at 605nm $(bR_{605}^{acid}$) at pH 2.6, and to a second form at 565nm $(bR_{565}^{acid})$ at pH 0.8. Dark-adapted gels showed an isosbestic point for each transition whereas light-adapted gels did not. Visible CD spectra of $bR_{570}^{LA},\;bR_{305}^{acid}\;and\;bR_{565}^{acid}$ all showed the typical bilobed pattern. CD spectra measured at UV wavelength region were also independent of the variation of pH in terms of molar ellipticity and spectral shape. The protonated species $bR_{605}^{acid}$ may be one of the intermediates formed during the normal photochemical cycle of purple membrane. Most probably, the species $bR_{605}^{acid}$ is considered to be $O^{640}$ in the cycle.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.39 no.3
• /
• pp.257-266
• /
• 2012

The objective of this in vitro study was to monitor the amount of remineralization of decalcified enamel according to the number of fluoride varnish application using quantitative light-induced fluorescence-D and polarizing microscope. Artificial white lesion induced on the sound 72 teeth, $CavityShield^{TM}$ (Group I), $FluroDose^{TM}$ (Group II) and $Flor-Opal^{(R)}$ Varnish (Group III) were applied 1, 2 or 3 times every two weeks. The following results was obtained: 1. In group I, II and III, ${\Delta}L$ were increased. From regression analysis of ${\Delta}L$ by the number of application, the equation was y = 3.878x + 90.612 in group I, y = 3.133x + 37.168 in group II, and y = 3.509x + 82.322 in group III(p < 0.05). 2. In group I, II and III, ${\Delta}D$ were decreased. From regression analysis of ${\Delta}D$ by the number of application, the equation was y = -2.336x + 107.235 in group I, y = -2.158x + 101.620 in group II, and y = -1.940x + 94.806 in group III(p < 0.05). 3. The Pearson correlation value between the ${\Delta}L$ and ${\Delta}D$ was -0.673 in group I, -0.574 in group II, and -0.431 in group III(p < 0.05).

• Proceedings of the Optical Society of Korea Conference
• /
• 1995.06a
• /
• pp.11-17
• /
• 1995

반절연 InP를 전류 차단층으로 사용하는 초고속 변조 Distributed Feedback (DFB) 레이저의 다이오드를 제작 하였다. Grating이 형성된 InP 기판에 유기금속 증착법 (MOVPE)을 사용하여 다중 양자 우물 구조 성장 시켜 메사구조를 연성 한후, 전류 차단층으로 반절연 InP를 성장 하였다. 제작된 레이저 다이오드는 평균 문턱전류 10 mA, 기울기효율 14%이며, 30mA 구동 전류에서 10GHz 이상의 3dB 대역폭 특성을 보였다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.3 no.3
• /
• pp.681-686
• /
• 1999

In this study, the gain characteristics of the strained structures for SOA were calculated numerically and the optimized strained quantum well for the polarization-insensitive SOA was obtained. The structures used in this calculation were consisted of one, two, and three GaAs Delta layers respectively in the GaInAs(160 $\AA$) well. Moreover the third one was calculated by changing from one mono-layer to three mono-layers in the thichless of GaAs delta layers. This structure enhances the TM mode gain coefficient with good efficiency because the light-hole band is lifted up whereas the heavy-hole band is lowered down. Additionally, The structure of the 3 GaAs delta layers(1 mono layer thickness) shows 3dB gain bandwidth of 85nm in 1.55um wavelength system. This study is expected to be used in making a wide band and polarization-independent semiconductor optical amplifier practically.

• Journal of the Korean Chemical Society
• /
• v.26 no.6
• /
• pp.369-377
• /
• 1982

The technique of combined-measurement of reflectance and ellipsometric parameters was used for studying the anodic film formed on nickel surface in basic solutions. An ellipsometer was automated for transient measurements by way of modulating the plane-polarized light with the Faraday effect. Surface film was formed electrochemically by applying a potential step from the reduction potential range to the passivation range on a polished, high-purity, polycrystalline nickel specimen. From that instant, the changes in the reflectance(r) and the ellipsometric parameters(${\Delta},{\Psi}$) of the surface film were recorded by the automatic ellipsometer. Three exact simultaneous equations including these optical signals, ${\Delta},{\Psi}$ and r were solved numerically with a computer in order to determine the optical properties, n, k, and the thickness, ${\tau}$, of the surface film. From the computed results which showed dependence on pH and time, it was found that passivation of nickel can be effectively attained by surface film thinner than $15{\AA}$ and this passivation film has a small optical absorption coefficient. It seemed that a high pH environment enhances the rate of passivation and is favorable for a denser structure of the surface film. The experimental evidence is in accordance with the hypothesis that the composition of the passive film can be approximated by $Ni(OH)_2$ in the early stage of passivation and that as time passes the composition changes partially toward that of NiO through dehydration.