• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.10-13
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• 2005

$Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

• 센서학회지
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• 제10권6호
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• pp.295-303
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• 2001

형광체로서 ZnS를 사용하고 BST 강유전체 박막을 절연체로 사용한 전계발광소자를 제작하고 그 특성을 조사하였다. 형광체로는 청색 및 녹색발광을 위해 각각 $ZnS:AgF_3$와 ZnS:$TbF_3$를 사용하였으며 적색을 위해 ZnS:Mn과 $ZnS:SmF_3$를 사용했다. 이들의 형광체가 증착 도중에 분해되는 것을 막기 위해 석영관에 그들을 각각 봉입해서 열처리하여 결정화시킨 후에 진공증착원으로 사용하였다. 한편 절연층으로 사용한 BST박막은 $Ba_{0.5}Sr_{0.5}TiO_3$세라믹스 타겟을 사용하여 마그네트론 스퍼터링 방법으로 제조하였다. 이때 기판온도, 분위기압 및 작동기체인 $Ar:O_2$의 비가 각각 $400^{\circ}C$, 30 mTorr 및 9:1이였다. 각 형광체의 두께는 150 nm씩 합계 600 nm였고, 절연층은 상부가 400 nm 및 하두가 200 nm이었다. 이와 같이 만든 박막 전계발광소자의 발광 문턱전압은 $75\;V_{rms}$이고, 최고 휘도는 $100\;V_{rms}$에서 $3200\;cd/m^2$이었다. 그리고 절연층의 유전상수는 1 kHz에서 254이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.989-992
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• 2001

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(x=0.10, 0.15, 0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of the composition ratio and sintering temperature were studied. The BSCT(50/40/10) specimen sintered at 1500$^{\circ}C$ showed the highest average grain size(18.25 ${\mu}$m). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 1450$^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively. Dielectric constant at room temperature decreased with increasing an applied field, tunability of the BSCT(50/40/10) sintered at 1300$^{\circ}C$ was 18%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.761-763
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• 2004

최근에 위성용 필터로서 유전체 공진기 내장 도파관 필터가 많이 연구되고 있다. 이 필터의 튜닝을 위하여 튜닝 스크류가 일반적으로 사용되어져 왔는데 튜닝 스크류의 사용은 복잡한 필터의 튜닝 시 너무 소모적인 작업을 야기시키고 미세한 튜닝에 어려움이 있어서 다른 해결책을 필요로 한다. 또한 제품의 사용 시에는 온도등의 외부환경의 변화에 대하여 대처를 하기 위하여 전기적인 튜닝을 이용한 튜닝의 자동화에 대한 필요성이 대두되었다. 이에 대한 해결책으로 BST($Ba_xSr_{1-x}TiO_3$)라는 강유전체를 이용하는 튜닝에 대하여 소개하고 한 경우에 대하여 FDTD 방시의 EM 시뮬레이션을 구하여 그 결과로서 전기저인 필터 튜닝의 가능성을 보여준다.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1061-1067
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• 2004

In this study, ferroelectric (Ba,Sr)TiO$_3$ and high temperature superconductor YBCO thin films were fabricated by PLD (Pulsed Laser Deposition) method and tuneable bandstop filters were implemented with two different IDC(Interdigital Capacitance) gap patterns, 20${\mu}{\textrm}{m}$ and 30${\mu}{\textrm}{m}$ using these two thin film layers. The resonant frequency was changed by DC bias voltage. By comparing measured results with simulation, the dielectric properties of ferroelectric thin film have been extracted. The permittivity was 820 ～ 900 at 30 K and had an acceptable error range but the loss tangent had a great difference, 0.018 in 30${\mu}{\textrm}{m}$ IDC gap pattern and 0.037 in 20 ${\mu}{\textrm}{m}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.114-117
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and sintering temperature. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $1020^{\circ}C$ due to the formation of the polycrystalline perovskite phase. BSCT(50/40/10) specimen sintered at $1500^{\circ}C$ showed the highest average grain size(18.25$[{\mu}m]$). Curie temperature and dielectric constant at room temperature decreased with increasing amount of Ca. BSCT(50/40/10) specimen sintered at $1450^{\circ}C$ showed a good dielectric constant, K, (=4324) and dielectric loss, $tan{\delta}$, (=0.972%) properties at 1[KHz].

• 한국초전도ㆍ저온공학회논문지
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• 제19권3호
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• pp.13-17
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• 2017

We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

• 자원환경지질
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• 제38권4호
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• pp.481-492
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• 2005

이 연구에서는 광주지역 하상퇴적물에 대한 지질집단별 지구화학적 특성에 대해 규명 하고자 한다. 이를 위해 물이 흐르고 있는 1차 수계를 대상으로 하상퇴적물시료 104개를 채취하였고, 실험실에서 자연건조 시켰다. 화학분석을 위한 시료는 알루미나 몰타르를 이용하여 200메쉬 이하로 분쇄하였고, XRF ICP-AES, NAA분석을 실시하였다. 연구지역 하상퇴적물에 대해, 지질집단별 지구화학적 특성 비교와 기존 암석에 대한 연구에서 얻어진 암석화학적인 특성과의 비교를 위해, 선캠브리아기 화강편마암 지역, 쥬라기 화강암 지역, 백악기 화순안산암 지역으로 분리하였다 광주지역 하상퇴적물의 주성분원소 함량은 $SiO_2\;51.89\~70.63\;wt.\%,\;Al_2O-3\;12.91\~21.95\;wt.\%,\;Fe_2O_3\;3.22\~9.89\;wt.\%,\;K_2O\;1.85\~4.49\;wt.\%,\;MgO\;0.68\~2.90\;wt.\%,\;Na_2O\;0.48\~2.34\;wt.\%,\;CaO\;0.42\~6.72\;wt.\%,\;TiO_2\;0.53\~l.32\;wt.\%,\;P_2O_5\;0.06~0.51\;wt.\%\;and\;MnO\;0.05\~0.69\;wt.\%.$이다. 하상퇴적물과 암석에 대한 AMF 삼각도에서, 암석은 칼크-알칼리계열에 도시되는데 비하여, 하상퇴적물은 솔레아이트 계열과 칼크-알칼리계열의 경계부위에 도시된다. 이는 $Fe_2O_3$ 함량이 암석에서보다 하상퇴적물에 더 많이 함유되어 있는 것과 관련이 있는 것으로 보인다. $SiO_2$에 대한 $K_2O+Na_2O$의 비교그림에서, 하상퇴적물은 암석에서와 같이 subalkaline 계열에 점시된다. 하상퇴적물의 미량성분원소 및 희토류 원소 함량은 $Ba 590\~2170ppm$, Be$1\~2.4$ppm, Cu $13\~179ppm$, Nb $20\~34ppm$, Ni$10\~50ppm$, Pb $17\~30$ppm, Sr $70\~1025$ ppm, V$42\~135$ ppm, Zr$45\~171$ ppm, Li$19\~77$ppm, Co$4.3\~19.3$ppm, Cr$28\~131$ppm, Cs$3.1\~17.6$ ppm, Hf $5\~27.6$ ppm, Rb $388\~202$ ppm, Sb$0.2\~l.2$ ppm, Sc$6.4\~17$ ppm, Zn $47\~389$ ppm, Pa $8.8\~68.8$ ppm, Ce$62\~272$ppm, Eu$1\~2.7$ppm and Yb$0.9\~6$ppm의 범위를 보인다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.