• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.200-200
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• 2008

This paper reports on electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for I hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function fo electric field (${\pm}40$ KV/cm) at room temperature using interdiigitated Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the finger paris was increased onto $Al_2O_3$, the capacitance increased. The capacitance of 5 pairs finger was 0.3pF and 10 pairs finger was 0.9pF.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.179-179
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• 2009

This is for the electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST materials had been chosen for high frequency applications due to it's high permitivity and tunability. The BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700\;^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1 hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function of electric field ($\pm40$ KV/cm) at room temperature using inter-digital Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the 10 pairs finger was the best capacitance onto $Al_2O_3$ substrate. The capacitance was 0.9pF. Also Dielectric constant was been 351 at 100 mTorr and annealing temperature $750^{\circ}C$ for 1 hour. The loss tangent was been 0.00531.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.311-312
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• 2006

The dielectric Properties of add $Li_2CO_3$ to ($Ba_{0.6}Sr_{0.4})TiO_3$ powder in this research, made thick film by tape casting method and annealing at $970^{\circ}C$ for 2 hours each from the $O_2$, Ar and O2-plasma atmosphere were investigated. The dielectric Properties of Ar atmosphere was to higher with tunability. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.545-548
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• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(BSCT) (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ratio were studied. As a result of the differential thermal analysis (DTA), exothermic perk was observed at around $860^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The BSCT thick films sintered at $1350^{\circ}C$ for 2h showed the average grain size of $2{\sim}7{\mu}m$. The average thickness of BSCT thick films, obtained by 3 times of screen-printing, was approximately $85{\mu}m$.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.2
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• pp.18-22
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.121-127
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• 1998

In this paper, to develop PTCR(Positive Temperature Coefficient of Resistance) thermistor with high withstanding voltage, Ca were added to. the compositions of $(Ba_{0.9165-X}-Sr_{0.08}-Ca_X-Y_{0.0035})TiO_3+MnO_2$ 0.02wt%+$SiO_2$ 0.5wt%. the effects of Ca additions were researched according the increasing of Ca from 0[mol%] to 20[mol%], and the electrical properties were investigated. As increasing Ca additions from 0[mol%] to 20[mol%], the grain size of the specimens was reduced from 11.1[${\mu}m$] to 6.15[${\mu}m$], and also the sintered density was reduced from 5.43[$g/cm^3$] to 5.05[$g/cm^3$] and their the breakdown voltages were increased from 163[V/mm] to 232[V/mm]. It is shown that the breakdown voltage was increased with amount of Ca additions.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.15-18
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• 2006

REBCO coated conductors (RE: rare earth elements) have recently drawn great attention since they are known to possess stronger flux pinning centers in high magnetic fields compared with YBCO coated conductors. In this study, $GdBa_2Cu_3O_{7-d}(GdBCO)$ was selected to investigate the influence of the distance between target and substrate and substrate temperature on the superconducting properties of GdBCO films on the $SrTiO_3(100)$ substrate. Samples were fabricated by pulsed laser deposition (PLD) with a Nd:YAG laser (355nm). Under a given oxygen pressure of 800mTorr, we changed the distance between target and substrate from 5.5cm to 7.0cm and the substrate temperature from $750^{\circ}C\;to\;850^{\circ}C$. The crystallinity and texture of GdBCO films were analyzed by X-ray diffraction (XRD), and the surface morphology was observed by the scanning electron microscopy (SEM). Tc and Jc values were measured by the four point probe method. High quality GdBCO films with Tc of 89.7K and Jc over $1MA/cm^2$ at 77 K in self field were successfully fabricated by optimizing processing parameters. The detailed processing conditions, microstructure and superconducting properties will be presented for a discussion.