• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.10-13
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• 2005

$Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.989-992
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• 2001

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(x=0.10, 0.15, 0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of the composition ratio and sintering temperature were studied. The BSCT(50/40/10) specimen sintered at 1500$^{\circ}C$ showed the highest average grain size(18.25 ${\mu}$m). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 1450$^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively. Dielectric constant at room temperature decreased with increasing an applied field, tunability of the BSCT(50/40/10) sintered at 1300$^{\circ}C$ was 18%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.761-763
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• 2004

최근에 위성용 필터로서 유전체 공진기 내장 도파관 필터가 많이 연구되고 있다. 이 필터의 튜닝을 위하여 튜닝 스크류가 일반적으로 사용되어져 왔는데 튜닝 스크류의 사용은 복잡한 필터의 튜닝 시 너무 소모적인 작업을 야기시키고 미세한 튜닝에 어려움이 있어서 다른 해결책을 필요로 한다. 또한 제품의 사용 시에는 온도등의 외부환경의 변화에 대하여 대처를 하기 위하여 전기적인 튜닝을 이용한 튜닝의 자동화에 대한 필요성이 대두되었다. 이에 대한 해결책으로 BST($Ba_xSr_{1-x}TiO_3$)라는 강유전체를 이용하는 튜닝에 대하여 소개하고 한 경우에 대하여 FDTD 방시의 EM 시뮬레이션을 구하여 그 결과로서 전기저인 필터 튜닝의 가능성을 보여준다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1061-1067
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• 2004

In this study, ferroelectric (Ba,Sr)TiO$_3$ and high temperature superconductor YBCO thin films were fabricated by PLD (Pulsed Laser Deposition) method and tuneable bandstop filters were implemented with two different IDC(Interdigital Capacitance) gap patterns, 20${\mu}{\textrm}{m}$ and 30${\mu}{\textrm}{m}$ using these two thin film layers. The resonant frequency was changed by DC bias voltage. By comparing measured results with simulation, the dielectric properties of ferroelectric thin film have been extracted. The permittivity was 820 ～ 900 at 30 K and had an acceptable error range but the loss tangent had a great difference, 0.018 in 30${\mu}{\textrm}{m}$ IDC gap pattern and 0.037 in 20 ${\mu}{\textrm}{m}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.114-117
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and sintering temperature. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $1020^{\circ}C$ due to the formation of the polycrystalline perovskite phase. BSCT(50/40/10) specimen sintered at $1500^{\circ}C$ showed the highest average grain size(18.25$[{\mu}m]$). Curie temperature and dielectric constant at room temperature decreased with increasing amount of Ca. BSCT(50/40/10) specimen sintered at $1450^{\circ}C$ showed a good dielectric constant, K, (=4324) and dielectric loss, $tan{\delta}$, (=0.972%) properties at 1[KHz].

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.13-17
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• 2017

We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

• Economic and Environmental Geology
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• v.38 no.4 s.173
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• pp.481-492
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• 2005

The purpose of this study is to determine geochemical characteristics for stream sediments in the Gwangju area. We collect the stream sediments samples by wet sieving along the primary channels and dry these samples slowly in the laboratory and grind to under 200mesh using an alumina mortar fur chemical analysis. Major elements, trace and rare earth elements are determined by XRF, ICP-AES and NAA analysis methods. For geochemical characteristics on geological groups of stream sediments, we separate geologic groups which are derived from Precambrian granite gneiss area, Jurassic granite area and Cretaceous Hwasun andesite area. Contents range of major elements for stream sediments in the Gwangju area are $SiO_2\;51.89\~70.63\;wt.\%,\;Al_2O-3\;12.91\~21.95\;wt.\%,\;Fe_2O_3\;3.22\~9.89\;wt.\%,\;K_2O\;1.85\~4.49\;wt.\%,\;MgO\;0.68\~2.90\;wt.\%,\;Na_2O\;0.48\~2.34\;wt.\%,\;CaO\;0.42\~6.72\;wt.\%,\;TiO_2\;0.53\~l.32\;wt.\%,\;P_2O_5\;0.06\~0.51\;wt.\%\;and\;MnO\;0.05\~0.69\;wt.\%.$ According to the AMF diagram for stream sediments and rocks, the stream sediments are plotted on boundary of tholeiitic series and calk alkaline series, which shows that contents of $Fe_2O_3$ are higher in stream sediments than rocks. According to variation diagram of $SiO_2$ versus $(K_2O+Na_2O),$ stream sediments are plotted on subalkaline series. Contents range of trace and rare earth elements for stream sediments in the Gwangiu area are Ba$590\~2170$ppm, Be1\~2.4$ppm, Cu$13\~79$ppm, Nb$20\~34$ppm, Ni$10\~50$ppm, Pb$17\~30$ppm, Sr$70\~1025$ ppm, V$42\~135$ppm, Zr$45\~171$ppm, Li$19\~77$ppm, Co$4.3\~19.3$ppm, Cr$28\~131$ppm, Cs$3.1\~17.6$ppm, Hf$5\~27.6$ppm, Rb$388\~202$ppm, Sb$0.2\~l.2$ ppm, Sc$6.4\~17$ppm, Zn$47\~389$ppm, Pa$8.8\~68.8$ppm, Ce$62\~272$ppm, Eu$1\~2.7$ppm and Yb$0.9\~6$ppm.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.