• Title/Summary/Keyword: (Ba, Sr)TiO$_3$

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Electrical Properties of Ba0.66Sr0.34TiO3 Thin Films Fabricated by a Seed-layer Process (Seed-layer 공정을 이용한 Ba0.66Sr0.34TiO3박막의 제조 및 전기적 특성 연구)

  • 최덕영;박철호;손영국
    • Journal of the Korean Ceramic Society
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    • v.40 no.2
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    • pp.198-205
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    • 2003

  • $Ba_{0.66}Sr_{0.34}TiO_3$ thin films and seed-layers were deposited on $Pt/Ti/SiO_2/Si$substrate by R.F. magnetron sputtering method. Effects of various substrate temperature conditions on electrical properties (such as capacitance and leakage current) of BST thin films were studied. The effect of seed-layer was also studied. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.

  • https://doi.org/10.4191/KCERS.2003.40.2.198 인용 PDF KSCI

Dielectric Properties of Continuous Composition Spreaded $BaTiO_3-SrTiO_3$ Thin Films Prepared by Off-Axis RF Magnetron Sputtering System

  • Kim, Yoon-Hoe;Jung, Keun;Yoon, Seok-Jin;Park, Kyung-Bong;Choi, Ji-Won
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.326-326
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    • 2010

  • The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

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