• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.239-244
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• 1999

Ultrafine lead magnesium niobate $Pb(Mg_{1/3}Nb_{2/3}) O_3$ (PMN) powders have been successfully prepared via a micro-emulsion processing technique. By stepwise hydrolysis using aqueous as the precipitant, hydroxide precursor was obtained from nitrate solutions dispersed in the nanosized aqueous domains of a microemulsion consisting of cyclohexane, non-ionic surfactant (NP5+NP9) and an aueous phase. Upon calcination of the microemulsion-derived precursor at $800^{\circ}C$, PMN powders with 100% perovskite phase was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• Journal of the Korean Chemical Society
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• v.32 no.1
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• pp.9-14
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• 1988

Perovskite type compounds of the $La_{1-x}Ca_xFeO_{3-y}$ system were prepared from stoichiometric mixtures of La_2O_3,\;CaCO_3$, and Fe(NO-3)_3{\cdot}9H_2O$ by heating at 1100$^{\circ}C$ for 24 hours. The crystallographic structures of the solid solutions of all compositions were orthorhombic systems. X-ray diffraction and Mohr salt analysis revealed that at higher y value the phase transition due to vacancy ordering occured and that the lattice volume decreased when the x value was increased. The value of nonstoichiometric ratio y were found to be in the range of $0.0{\sim}0.5$. Electrical conductivities of this systems are measured in temperature range of -100 to 100$^{\circ}C$. Ionic contribution to total conductivity was found from activation energy in the phase containing the open pathway due to vacancy ordering.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.715-719
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• 2011

The $La_{0.7}Sr_{0.3}Cr_{1-x}Ni_{x}O_{3}$(LSCN-x) perovskites were prepared by citric acid and EDTA using a sol-gel method. The LSCN-x was characterized by BET, XRD, SEM, $H_2$-TPR, EA and TEM. The catalytic performance of LSCN-x catalysts in steam reforming of propane in the temperature range 600~$800^{\circ}C$ was investigated. Propane conversion and hydrogen yield increased with an increase in the amount of added Ni up to x=0.5 in the B-site, denoted as LSCN-0.5, under S/C=1 and S/C=1.7 reaction conditions. The LSCN-0.5 catalyst exhibited the best performance under Ni-substitution of which propane conversion and hydrogen yield was 100%, 95.9% at $800^{\circ}C$ in the S/C=1.7 condition, respectively. The morphology of carbon deposited on the catalysts after reaction exhibited filamentous carbon and amount of carbon deposited on the catalysts after reaction increased with an increase in the amount of added Ni.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.1
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• pp.169-178
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• 2000

Perovskite oxide catalysts doped on porous alumina beads are prepared in a citric acid solution. To investigate the applicability of the catalysts to the hot gas cleanup, a series of experiments on the reduction characteristics of $NO_x$ by CO as a reducing agent are carried out in a packed bed reactor containing the catalysts. Parameters tested are the operating temperature and $CO/NO_x$ molar ratio. It is found that mixed complex oxides of $La_{0.5}Sr_{0.5}CoO_3$, $SrAl_{12}O_{19}$ and $LaAl_{11}O_{18}$ are uniformly distributed on the alumina beads. The conversion efficiency of $NO_x$ by CO sharply increases with the operating temperature up to $700^{\circ}C$ and then approaches 100% when $CO/NO_x$ molar ratio is greater than 1.0. The conversion efficiency of $NO_x$ is maintained by over 98% during a continuous operation for 23 hours at $800^{\circ}C$ and space velocity of $10700hr^{-1}$.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.17-17
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• 2002

Time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of the epitaxially grown BaTiO₃ layers on the MgO(100) surface. Hetero-epitaxial BaTiO₃ layers can be deposited by the following steps: first thermal evaporation of titanium onto the MgO(100) surface in the atmosphere of oxygen at 400℃, secondly thermal evaporation of barium in the same manner, and finally annealing at 800℃. Well ordered perovskite BaTiO₃ was confirmed from the ICISS spectra and reflection high electron energy diffraction (RHEED) patterns. It was also revealed that BaTiO₃ had cubic structure with the same lattice parameter of bulk phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.304-307
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• 1999

The Mg($_{1-x}$ )S $r_{x}$Ti $O_3$(x=0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with calcining temperature and composition ratio by XRD and DT-TGA. Increasing the calcining temperature from 80$0^{\circ}C$ to 100$0^{\circ}C$, second phase was decreased and average particle size was increased. The SrTi $O_3$ ceramics of calcined at 100$0^{\circ}C$ had a structure of polycrystalline perovskite without the secondary phases. The average particle size of the $Mg_{0.9}$S $r_{0.1}$Ti $O_3$ ceramics calcined at 100$0^{\circ}C$ were 0.67${\mu}{\textrm}{m}$..>......

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.69-76
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• 1999

Electrical characteristics of perovskite phases in the BaCe0.9R0.1O3-$\delta$(R=La, Yb and Al) system have been studied. Electrical conductivities of all specimens in air were higher than those in N2 atmosphers between 600 and 100$0^{\circ}C$. When temperature was elevated, the electrical conductivity difference between both atmospheres increased. Electrical conductivity of Yb3+ doped BaCeO3 specimen was higher than those of the La3+ and Al3+ doped specimens. The BaCe0.0Al0.1O3-$\delta$ showed higher proton transference number than both BaCe0.9Yb0.1O3-$\delta$ and BaCe0.9La0.1O3-$\delta$.