• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.27-32
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• 2001

The 0.9PMN-0.1PT powders was prepared by the sol-gel process, and the effect amounts of ${Mg(OC_{2}H_{5})}_2$ and ${Pb(CH_{3}COO)}_2.3H_{2}O$ as starting materials was studied. As a result the percent of perovskite phase of the calcined powders increased with increased calcination temperatures. Maximum of perovskite phase was at $850^{\circ}C$ for 4 hrs. 0.9PMN-0.1PT powder by addition of 5 wt% excess ${Mg(OC_{2}H_{5})}_2$ crystallized to perovskite phase with a ${\fallingdotseq}100%$ yield.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.331-335
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• 1999

The transition metal oxides have been of interest as bifunctional electrocatalysts for bifunctional air electrodes. The amorphous citrate precursor (ACP) process has been optimized to prepare perovskite (La0.6Ca0.4CoO3) and pyrochlore (Pb2Ru2O6) powders with high surface area, and consequent improvement of The electrocatalytic performance in an air electrode with thermal treatment. PTFE -bonded gas diffusion electrodes loaded with perovskitc and pyrochlore catalysts showed good bifunctional performances. The electrodes were fairly stable up to 100 hour in the galvanostatic mode at ${\pm}25mA/cm^2$, from which these electrodes offer promise as practical bifunctional air electrodes.

• Bulletin of the Korean Chemical Society
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• v.15 no.3
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• pp.256-260
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• 1994

Perovskite type oxides of the $Sr_xHo_{1-x}FeO_{3-y}$ system with compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been prepared at 1200$^{\circ}$C in air. X-ray powder diffraction assigns the compositions with x=0.00 and 0.25 to the orthorhombic crystal system and those with x=0.50, 0.75, and 1.00 to the cubic one. The unit cell volumes of solid solutions increase with x in the system. Nonstoichiometric chemical formulas were determined by Mohr salt titration. The mole ratio of $Fe^{4+}$ ions to total iron ions and the concentration of oxygen ion vacancies increase with x. Mossbauer spectra for the compositions of x= 0.00, 0.25, and 0.50 show six lines indicating the presence of $Fe^{3+}$ ions in the octahedral site. However, the presence of $Fe^{4+}$ ions may also be detected in the spectra for the compositions with x=0.25 and x=0.50. In the compositions with x=0.75 and 1.00, single line patterns show also the mixed valence state of $Fe^{3+}$ and $Fe^{4+}$ ions. The electrical conductivity in the temperature range of -100$^{\circ}$C to 100$^{\circ}$C under atmospheric air pressure increases sharply with x but the activation energy decreases with the mole ratio of $Fe^{4+}$ ion. The conduction mechanism of the perovskite system seems to be hopping of the conduction electrons between the mixed valence iron ions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.205-210
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• 2000

Lead titanate thin films were fabricated on Si(100) wafer and ITO-coated glass substrates by metal organic chemical vapor deposition using ultrasonic spraying. When the ratio (Ti/Pb) of starting materials was 1.2, the films deposited on Si wafer had a single perovskite phase. The films deposited on ITO-coated glass had higher growth rate than that on Si wafer. As deposition temperature was increased from $530^{\circ}C$ to $570^{\circ}C$, dielectric constant was increased due to the increase of crystallinity and grain size. At $570^{\circ}C$, dielectric constant and dielectric loss of the films were 205 and 0.016, respectively. When the deposition temperature is higher than $600^{\circ}C$, dielectric constant was decreased.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.145-149
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• 2004

We have grown piezoelectric oxide films by RF magnetron sputtering using miscut substrates. Films were Brown on(001) $SrTiO_3$ substrates with miscut angles from 0 to 8 degrees toward the (100) direction. Films on high miscut substrates (>$4^{\circ}$) showed almost the pure perovskite phase in x-ray diffraction and were nearly stoichiometric. In contrast, films on exact (001) $SrTiO_3$ contained a high volume fraction of pyrochlore phases. A film on an $8^{\circ}$ miscut substrate exhibits a polarization hysteresis loop with a remnent polarization of 20$\mu$C/$\textrm{cm}^2$ at room temperature.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.25-30
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• 2013

Pb-free ferroelectric $(Na_{0.5}Bi_{0.5})TiO_3$ (NBT) thin films were prepared by a modified sol-gel process. Their structural, dielectric and pyroelectric properties were investigated as a function of the excess Na/Bi ratio and the annealing temperature. In the case of thin films containing no excess Na and Bi, only partial amounts of the perovskite NBT were crystallized, where the films consisted mainly of the pyrochlore phase of $Bi_2Ti_2O_7$ for annealing conditions of $600{\sim}800^{\circ}C$. With increasing excess Na/Bi ratio, the proportion of the perovskite phase effectively increased due to the compensation of the volatile Na and Bi components. For a Na/Bi ratio of 2.0, the thin film with single NBT perovskite phase was obtained within XRD detection limit after annealing at $700^{\circ}C$ for 10 min and it showed the excellent dielectric properties, ${\varepsilon}r$ of ~550 and tan ${\delta}$ of 0.03. While these properties were degraded for Na/Bi ratio of 2.5 despite the existence of pure perovskite phase. The NBT thin film with Na/Bi ratio of 2.0 are also promising candidates for applications requiring pyroelectric devices because it was found to have pyroelectric coefficients of $1.3{\sim}7nC/cm^2K$ in the temperature range of $30{\sim}100^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.496-503
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• 1994

In recent years Sol-Gel processing provides an interesting alternative method for the fabrication of ferroelectric thin layers and powder. PZT powder was prepared from an alkoxide-based solution by a Sol-Gel method. Gelation of synthesized complex solutions, microstructure, thermal analysis and crystallization behaviors of the calcined powder were studied in accordance with a water content and a catalyst. Especially gelation and crystallization behavior were analysed with the change of pH. The gelation time decreased as the pH of the mixed solution increased. For PZT powder with 650.deg. C heat treatment, 100% perovskite phase was formed by using either acidic or basic catalyst. By using either acidic or basic catalyst, we were able to get very fine powders of uniform shape with an average particle size of 0.8-1.mu.m.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.216-222
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• 1992

PLZT thin films were prepared using sol-gel spin coating. The films mainly consisted of perovskite phase when heat treated at 600$^{\circ}C$ and in O2 or air atmosphere for 2 hours after 7 coating cycles. Cracks were formed when smaller than after 9 coating cycles. When ITO interlayer existed between Corning 7059 glass substrate and the film, cracks were not formed after 9 coating cycles, but cracks were formed after 11 coating cycles because of large volume change of the film contracting on the substrate during the heat treatment. In the observation of microstructure, the thin films have perovskite phase of about 2 $\mu\textrm{m}$ grain size and pyrochlore phase of 100∼200${\AA}$ grain size.