• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.210-220
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• 2006

Dense $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were developed by conventional sintering process. The electrical properties of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were investigated as a function of Li substitution. When the sample sintered at $1100^{\circ}C$ for 4 h with the Substitution of 2 mol% Li, electro-mechanical coupling factor ($k_p$) and piezoelectric coefficient ($d_{33}$) were found to reach the highest values of 0.42 and 210 pC/N, respectively.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.47-53
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• 2016

Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.179-179
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• 2010

다양한 분야에서 확산 방지막은 소자의 신뢰성 향상에 중요한 역할을 하고 있다. 최근 반도체에 적용되기 시작한 구리 배선 형성 공정에서도 실리콘이나 실리콘 산화막으로 구리가 확산하는 것을 방지하는 기술이 중요한 부분을 차지하고 있다. 기존 physical vapor deposition (PVD)법을 이용한 $TaN_x$ 확산 방지막 형성 기술이 성공적으로 적용되고 있으나 반도체의 최소선폭이 지속적으로 감소함에 따라 한계에 다다르고 있다. 20 nm 급과 그 이하의 구리 배선을 위해서는 5 nm 이하의 매우 얇고 높은 피복 단차율을 가진 확산 방지막 형성 기술이 요구된다. 또한, 요구 두께의 감소에 따라 더 우수한 확산 방지 특성이 요구된다. Atomic layer deposition (ALD)은 박막의 정교한 두께 조절이 가능하며 높은 종횡비를 가지는 구조에서도 균일한 박막 형성이 가능하다. 이번 연구에서는 다른 질소 함량을 가진 $TaN_x$ 박막을 Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT) 전구체와 $H_2+N_2$ 반응성 플라즈마를 사용하여 plasma enhanced atomic layer deposition (PEALD) 법으로 형성하였다. 박막 내질소 함량에 따라 $TaN_x$의 상 (phase)과 미세구조 변화가 관찰되었고, 이러한 물성의 변화는 확산 방지 특성에 영향을 주었다. TEM (Transmission electron microscopy)과 SEM (scanning electron microscope), XPS (x-ray photoelectron spectroscopy)를 통해 $TaN_x$의 물성을 분석하였고, 300 도에서 700 도까지 열처리 후 XRD (x-ray deffraction)와 I-V test를 통해 확산 방지막의 열적 안정성이 평가되었다. PEALD를 통해 24 nm 크기의 trench 기판 위에 약 4 nm의 $TaN_x$ 확산 방지막이 매우 균일하게 형성할 수 있었으며 향후 구리 배선에 효과적으로 적용될 것으로 예상된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.83-87
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• 2002

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride ($SiN_X$) is widely used as a gate dielectric material for the hydrogenated amorphous silicon(a-Si:H) thin film transistors (TFT's). We investigated $SiN_X$ films were deposited PECVD at low temperature ($300^{\circ}C$). The reaction gases were used pure nitrogen and a helium diluted of silane gas(20% $SiH_4$, 80% He). Experimental investigations were carried out with the variation of $N_2/SiH_4$ flow ratios from 3 to 50 and the rf power of 200 W. This article presents the $SiN_X$ gate dielectric studies in terms of deposition rate, hydrogen content, etch rate and C-V, leakage current density characteristics for the gate dielectric layer of thin film transistor applications. Electrical properties were analyzed through high frequency (1MHz) C-V and current-voltage (I-V) measurements. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment.

• Korean Journal of Materials Research
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• v.26 no.7
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• pp.393-399
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• 2016

Flower-like nickel oxide (NiO) catalysts were coated on NiCrAl alloy foam using a hydrothermal method. The structural, morphological, and chemical bonding properties of the NiO catalysts coated on the NiCrAl alloy foam were investigated by field-emission scanning electron microscopy, scanning electron microscopy-energy dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. To obtain flower-like morphology of NiO catalysts on the NiCrAl alloy foam, we prepared three different levels of pH of the hydrothermal solution: pH-7.0, pH-10.0, and pH-11.5. The NiO morphology of the pH-7.0 and pH-10.0 samples exhibited a large size plate owing to the slow reaction of the hydroxide ($OH^-$) and nickel ions ($Ni^+$) in lower pH than pH-11.5. Flower-like NiO catalysts (${\sim}4.7{\mu}m-6.6{\mu}m$) were formed owing to the fast reaction of $OH^-$ and $Ni^{2+}$ by increased $OH^-$ concentration at high pH. Thus, the flower-like morphology of NiO catalysts on NiCrAl alloy foam depends strongly on the pH of the hydrothermal solution.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.865-870
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• 1998

The surfaces of titanium specimens were modified by immersion in calcium phosphate buffered solutions (pH 5.8, 7.0, 8.0) for 10 days and simulated body fluid(SBF) for 30 days by turns. The modified surfaces were characterized using scanning electron microscopy(SEM), X-ray diffractometery(XRD) and Fourier transform infrared spectrophotometer(FT-IR), and compared with specimen immersed in only SBF. The results indicated that the immersion in calcium phosphate buffered solutions accelerated the formation of the surface films. The formed layer showed granular shaped microstructure, and recognized as calcium phosphate such as a hydroxyapatite(HA) or a $\beta$-tri-calcium phosphate($\beta$-TCP). The thickness of the layer increased of the buffered solutions in order of pH 8.0, 7.0 and 5.8 and the density increased in order of pH 7.0, 8.0 and 5.8.

• Korean Journal of Microbiology
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• v.25 no.4
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• pp.297-297
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• 1987

A $C_{1}$ enriched cellulase fraction was separated from culture filtrate of anaerobic Clostridium thermocellum by hydroxyapatite column chromatography. The separated fraction showed strong synergistic action with $C_{x}$ component (endo-$\beta$-1, 4-glucanase) in digestion of crystalline cellulose, similar to the other aerobic cellulolytic microorganisms. Unlike the $C_{x}$ component the $C_{1}$ enriched fraction was rapidly inactivated by oxidation at the atmospheric condition. The enzyme activity was significantly enhanced by the addition of reducing agents, especially $\beta$-mercaptoethanol, which indicates that a $C_{1}$ component has a lot of sulfhydryl groups essential for the enzyme activity. The effect of metal ions on $C_{1}$ activity was also investigated. The $C_{1}$ fraction was found to be thermally stable compare to endo-$\beta$-1,4-glucanase. Optimal temperature and pH were found to be 60.deg.C and 6.0, respectively.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.624-631
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• 1993

The composites in the system aluminium titanate-mullite were synthesized by stepwise alkoxide hydrolysis of tetraethylorthosilicate, Si(OCLH5), and titaniumtetraethoxide, $Ti(OC_{2}H_{5})_4$ in $Al_{2}O_{3}$ ethanolic colloidal solution. All particles produced by sol-gel-process were amorphous, monodispesed and had a narrow particle size distribution. Sintered bodies at $1600 ^{\circ}C$ for 2h were subjected to prolonged durability tests-on the one hand annealing at the critical decomposition temperature of $1100 ^{\circ}C$ for lOOh and on the other cyclic thermal shock between 750 and $1400 ^{\circ}C$ for 100h. The best thermal durability was achieved by a composition containing 70 and 80 vol% aluminium titanate, which showed little change in microstructure and thermal expansion cycles during the tests. The microstructural degradation of samples studied using scanning electron microscopy, X-ray diffraction, and dilatometry, was presented here. The study was conducted in order to predict the service life of aluminium titanate-mullite ceramics formed by this processing route.

• Fire Science and Engineering
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• v.16 no.4
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• pp.15-19
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• 2002

This dissertation is about the development of $BaTiO_3$-type PTC(Positive Temperature Coefficient) thermistor by composition method. A multilayer-type PTC samples were fabricated under optimal conditions after setting the experimental composition equation as ($Ba_{0.95-x}$S $r_{0.05}$$Ca_{x}$ )$TiO_3$-$0.01TiO_2$-$0.01SiO_2$-$\alpha$$MnCO_3$-$\beta$N $b_2$ $O_{5}$.) and their testing results were analyzed. The optimal sin-tering and cooling temperatures were 13$50^{\circ}C$ for two hours and $100^{\circ}C$/h for an hour, respectively; By composing Ca and Mn, dopants to lower the resistivity at room temperature, and Nb, a dopant to raise peak resistivity(Ca:5 mol%, Mn:0.08 mol%, Nb:0.18 mol%), appropriately, a PTC thermistor, having the characteristics of relatively low resistivity at room temperature and high peak resistivity and a good temperature coefficient, has been developed. And we find that it is possible of application for fire detection sensor.r.r.