• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.547-549
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• 2001

The dielectric constants and dielectric losses of ZrTiO$_4$thin films deposited by DC magnetron reactive sputtering were investigated. The paraelectric properties were measured in the 100kHz range. As the deposition temperature increased (up to 67$0^{\circ}C$), the dielectric losses (tan$\delta$) decreased (down to 0.017$\pm$0.007), while the dielectric constants ($\varepsilon$) were in the range of 35$\pm$7. Post annealing at 80$0^{\circ}C$ in oxygen for 2h reduced tan$\delta$ down to 0.005$\pm$0.001, higher than those of well-sintered bulk ZrTiO$_4$.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• 한국산학기술학회논문지
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• 제6권6호
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• pp.457-460
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• 2005

금속 알콕사이드의 가수분해법인 졸-겔 공정을 이용하여 일차로 $TiO_2$와 $ZrO_2$ 나노 입자를 합성하고 난 후 $TiO_2$ 나노입자와 PbO를 혼합하여 $PbTiO_3$의 나노 입자를 얻었다. 2차 공정으로 나노입자 크기의 $ZrO_2$와 혼합하여 최종적으로 $PbZrTiO_3(PZT)$ 분말을 합성하였다. 소결된 압전체의 결정상을 분석하기 위하여 X-선 회절분석을 시행하였으며, 소결전 합성분말의 모양과 크기를 투과전자현미경을 이용하여 관찰하였으며 $900^{\circ}C$의 저온에서 소결한 $PbZrTiO_3$시편의 미세조직을 관찰하기 위하여 주사전자현미경을 이용하였다. 합성된 입자들의 크기는 각각 $TiO_2$는 약 20 ${\~}$ 30nm, $ZrO_2$는 15${\~}$30nm이였으며, $900^{\circ}C$ 저온에서 소결한 PZT 시편의 SEM 관찰결과 평균 입경은 $2{\~}4{\mu}m$의 페로 브스카이트 결정으로 치밀한 조직을 나타내었으며, 우수한 압전 특성도 나타내었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.167-170
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• 2011

Quaternary TiZrAlN nanocomposite thin films with a composition of 20.7Ti-22.2Zr-2.7Al-54.4N (at.%) were deposited by the closed-field unbalanced magnetron sputtering (CFUBMS) method and oxidized in air at temperatures between 500 and $700^{\circ}C$. The oxides formed were $TiO_2$, $ZrO_2$, and $Al_2O_3$. The films had inferior oxidation resistance because the amounts of $ZrO_2$ and $TiO_2$ were large while the amount of $Al_2O_3$ was small. The oxidation progressed primarily by the inward diffusion of oxygen and the outward diffusion of nitrogen.

• 한국입자에어로졸학회지
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• 제4권1호
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• pp.21-25
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• 2008

$Pb(Zr_{0.53}Ti_{0.47})O_3$ (PZT) was synthesized by a multiple wet dry process. Precipitates prepared from reaction between $ZrOCl_2{\cdot}8H_2O$ and $TiOCl_2$ and $NH_4OH$ in an aqueous solution was dried at $100^{\circ}C$, and calcined at $500^{\circ}C$ and $700^{\circ}C$. The mixture mixed with PbO and as-dried or calcined $Zr_{0.53}Ti_{0.47}O_4$ (ZT) powders was calcined again at 700 and $800^{\circ}C$. Well crystallized ZT and PZT were formed at even $700^{\circ}C$. PZT piezoelectric ceramics of more than 98.5% in a relative density was obtained by sintering at as low as $900^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1487-1489
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• 1994

$(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$ system which has a dielectric constant, low dielectric loss and temperature coefficient was investigated. Temperature coefficient varied from positive to negative with increasing of NiO. For the NiO content 1.0wt%. i.e $(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$, the ceramic showed very good dielectric properties such as ${\epsilon}$=37.8, $Q{\times}f_o=49.000$ and ${\tau}_r= 4{\pm}1ppm/^{\circ}C$.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.47.2-47.2
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• 2000

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2361-2367
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• 2010

$TiO_2-ZrO_2$ was prepared with surfactant through a sol-gel method. Catalysts containing 5 - 35% $H_3PO_4$ were prepared using these oxides. Subsequently the catalytic performance of prepared catalysts was determined for liquid phase esterification of aromatic acids. $H_3PO_4/TiO_2-ZrO_2$ has been used as catalyst to synthesize various novel esters by esterification of some aromatic acids with aliphatic alcohols (2-propanol, 1-butanol, iso butanol, 3-pentanol, 1-hexanol, heptanol, cyclo heptanol, octanol and decanol). Under optimized conditions, maximum yields and selectivity (100%) to the corresponding ester, was obtained by using 25 wt % $H_3PO_4/TiO_2-ZrO_2$ as catalyst. The Catalyst can be easily recycled after reaction and can be reused without any significant loss of activity/selectivity performance. No by-product formation, high yields, short reaction times, mild reaction conditions, operational simplicity with reusability of the catalyst are the salient features of the present synthetic protocol. The reaction was carried out under solvent-free condition.

• Bulletin of the Korean Chemical Society
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• 제6권6호
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• pp.344-347
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• 1985

Perovskite type oxides of $SrTiO_3,SrZrO_3,and\;SrTi_{1-x}Zr_xO_3$ have been systematically synthesized at $1250^{\circ}C$and $1550^{\circ}C$ with specimens containing additions of up to x=0.9 of zirconium by solid state reactions and characterized by X-ray diffraction. X-ray diffraction studies showed that the compound $SrTi_{1-x}Zr_xO_3$ has cubic structure. The lattice paramters of $SrTi_{1-x}Zr_xO_3$ solid solutions obey the Vegard's law and fairly large increase in volume can acompany the formation of this solution with increasing Zr content(X). Assuming the lattice constants of perovskite type compounds $A(B_{1-x}B'_x)O_3$where $B_{1-x}B'_x$ is $Ti_{1-x}Zr_x$, to be a linear function of the ionic radii of B and B' ions, the disordered ion pair of $Ti^{4+}$and $Zr^{4+}$ was verified from the lattice constants of a series compounds varying x=0,0.05, 0.25, 0.5, 0.75, 0.9, and 1.0 with known isovalent pairs.

• 한국진공학회지
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• 제5권2호
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.