• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Nuclear Engineering and Technology
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• v.49 no.5
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• pp.996-1005
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• 2017

In this paper, nuclear data for cross sections of the $^{64}Zn(n,2n)^{63}Zn$, $^{64}Zn(n,3n)^{62}Zn$, $^{64}Zn(n,p)^{64}Cu$, $^{66}Zn(n,2n)^{65}Zn$, $^{66}Zn(n,p)^{66}Cu$, $^{67}Zn(n,p)^{67}Cu$, $^{68}Zn(n,p)^{68}Cu$, and $^{68}Zn(n,{\alpha})^{65}Ni$ reactions were studied for neutron energies up to 40 MeV. In the nuclear model calculations, TALYS 1.6, ALICE/ASH, and EMPIRE 3.2 codes were used. Furthermore, the nuclear data for the (n,2n) and (n,p) reaction channels were also calculated using various cross-section systematics at energies around 14-15 MeV. The code calculations were analyzed and obtained using the different level densities in the exciton model and the geometry-dependent hybrid model. The results obtained from the excitation function calculations are discussed and compared with literature experimental data, ENDF/B-VII.1, and the TENDL-2015 evaluated data.

• Korean Journal of Crystallography
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• v.10 no.2
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• pp.119-124
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• 1999

X-선 회절법을 이용하여 3,6-bis(6'-methyl-2'pyridyl)pyridazine을 리간드로 한 Zn(Ⅱ) 착물인 [3,6-bis(6'-methyl-2'pyridyl)pyridazine]ZnCl2 (C16H16N4·ZnCl2)의 결정구조를 규명하였다. 이 결정의 결정계는 Monoclinic이며 공간군은 P21/a이다. 단위포 상수는 a=15.053(7) Å, b=14.594(7) Å, c=7.628(3) Å이며, β=93.92(4)°, V=1671.9(13) Å3, T=293(2)K, Z=4, Dc=1.594 Mgm-3이다. 회절반점들의 세기는 Enraf-Nonius CAD-4 diffractometer로 얻었으며 Mo Kα선(λ=0.71073 Å)을 사용하였다. 분자구조는 직접법으로 풀었으며, Fo>4σ (Fo)인 1750개의 독립 회절 데이터에 대하여 최소승자법으로 정밀화하여 최종 신뢰도 값 R=8.31%을 얻었다.

• Korean Journal of Crystallography
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• v.15 no.2
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• pp.78-82
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• 2004

The solvothermal reaction of zinc(H) nitrate $(Zn(NO_3)_2\;{\cdot}\;6H_2O)$ with $ATP(2-aminoterephthalate,\;H_2N-C_6H_3-1,4-(COO)_2)$ in a mixture of solvents of DMF and ethanol, in the presence of benzene, gave a 2 dimensional zinc polymer [Zn(ATP) (DMF)] (1). X-ray structure determination revealed that two zinc metals and four ATP ligands form the paddle-wheel SBUs, which are linked by the ATP ligands to give a 2-D square-grid network. Each square grid has approximate dimensions of $11.1\times11.1\;{\AA}$ based on Zn metals. Benzene was required to produce high-quality crystals of polymer 1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1849-1852
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• 2005

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.318-323
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• 2000

The intercalated compounds of alkylsulfonates into hydrated zinc were synthesized. From the high temperature powder X-ray diffraction (HTXRD), FT-IR, and molecular size, the temperature dependence of orientation for the intercalated alkylsulfonates were determined. In the temperatures range 1, alkylsulfonates were intercalated into hexa aqua zinc layer with the bilayer structure of $32.9^{\circ}$angle for ${Zn(H_2O_4]^{2+}[C_nH_{2n+1}SO_3]_2\;^-$. In the temperatures range 2, alkylsulfonates were intercalated into tetra aqua zinc layer with the bilayer structure of $55.2^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$. In the temperatures range 3, alkylsulfonates were directly bonded to zinc ion with the bilayer structure of $76.5^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$.

• Bulletin of the Korean Chemical Society
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• v.26 no.6
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• pp.892-898
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• 2005

A long, bis(monodentate), linking Schiff-base ligand L (py-CH=N-$C_6H_4$-N=CH-py) was prepared from 1,4-phenylenediamine and 3-pyridinecarboxaldehyde by the Schiff-base condensation. Ligand L has two terminal pyridyl groups capable of coordinating to metals through their nitrogen atoms. In contrast, the same reaction between 1,2-phenylenediamine and 3-pyridinecarboxaldehyde produced a mixture of imidazol isomers (2-pyridin-3-yl-1H-benzoimidazole), which are connected to one another by the N-H…N hydrogen bonding to form a tetramer. From Zn($NO_3)_2{\cdot}6H_2O$ and ligand L under various conditions, one discrete molecule, trans- [Zn($H_2O)_4L_2]{\cdot}(NO_3)_2{\cdot}(MeOH)_2$, and two 1-D zinc polymers, [Zn$(NO_3)(H_2O)_2(L)]{\cdot}(NO_3){\cdot}(H_2O)_2$ and [Zn(L) (OBC)($H_2O$)], were prepared. In ligand L, the N$\ldots$N separation between the terminal pyridyl groups is 13.994 $\AA$, with their nitrogen atoms at the meta positions (3,3’) in a trans manner. The corresponding N$\ldots$N separations in its compounds range from 13.853 to 14.754 $\AA$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.1-41.1
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• 2011

본 연구에서는 MOCVD법으로 사파이어 기판위에 u-GaN를 성장한 후 Mg을 도핑시켜 p-GaN를 성장하고, RF 스퍼터를 이용하여 n-ZnO를 도포하여 n-ZnO/p-GaN 이종접합을 형성한 후 진공증착기를 이용하여 Au/Ni를 증착시켜 발광다이오드(LED)를 제작하고 전기 광학적 특성을 조사하였다. 두께가 500 nm인 u-GaN 위에 성장된 p-GaN의 운반자 농도는 $1.68{\times}10^{17}\;cm^{-3}$ 이었다. 그리고 150, 300 nm 두께의 p-GaN에 대하여 측정된 DXRD 반치폭은 각각 450 arcsec, 396 arcsec 이었고, 상온에서 2.8~3.0 eV 영역에서 Mg 억셉터와 관련된 광루미네센스가 검출되었다. RF 스퍼터링에 의해 0.7 nm/min의 속도로 증착된 n-ZnO 박막은 증착 두께에 따라 비저항이 27.7 $m{\Omega}{\cdot}cm$ 에서 6.85 $m{\Omega}{\cdot}cm$ 까지 감소하였다. 그리고 n-ZnO 박막은 (0002)면으로 우선 배향되었으며, 상온에서 에너지갭 관련된 광루미네센스가 3.25 eV 부근에서 주되게 검출되었다. n-ZnO/p-GaN 이종접합 LED의 전류전압 특성곡선은 다이오드 방정식에 만족하는 특성을 나타내었다. 다이오드 지수는 3 V 이하 영역에서 1.64, 3~5 V 영역에서 0.85이었다. 그리고 5 V 이상 영역에서 공간전하의 제한을 받았으며, 다이오드 지수는 3.36이었다. 한편, 역방향 전류전압 특성은 p-GaN 박막의 두께에 영향을 받았으며, p-GaN 박막의 두께가 150, 300 nm 일 때 각각의 누설 전류는 $1.3{\times}10^{-3}$ mA와 $8.6{\times}10^{-5}$ mA 이었다. 상온에서 측정된 EL 스펙트럼의 주된 발광피크는 430 nm이었고, 반치폭은 49.5 nm이었다.

• Electrical & Electronic Materials
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• v.17 no.5
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• pp.13-20
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• 2004

1996년 GaN와 near band edge emission(NBE) 및 yellow deep-defect level emission의 발광 기구가 ZnO의 greene mission과 매우 유사하다는 점이 발견된 이 후［1,2］, II-VIZnO반도체에 대한 광학적 성질에 많은 관심이 집중되기 시작하였다. 1960년대 C. Klingshirin［3］에 의해 bulk ZnO의 exciton luminescence가 관측된 이래로, 1980년대 후반부터 적층 박막 성장 법들이 급속도로 발전을 하여 오고 1988 S. Bethke등이 CVD로 성장한 ZnO의 NBE emission에 관심을 갖기 시작하였고［4］, 1996년 2K에서 GaN, ZnO사이의 유사한 발광기구가 알려졌고［5］, 도호쿠 및 일본 공업대에서 ZnO의 적층 성장 및 상온에서 defect에 기인한 emission이 없는 깨끗한 PL 의 관측, 상온 lasing, 육방정계 결정 구조에서 비롯된 6-fold symmetry PL 등이 보고되기 시작하였다. ［6-8］ 2000년에 들어서면서 MgO와 CdO와의 solid solution에 의한 밴드갭을 2.6-4.2 eV 까지 조절하는 가능성이 보고되었고 이를 이용한 ZnO/MgZnO MQW 구조에 대한 연구도 병행되었다.(중략)