• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.298-299
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• 2010

Cu(In, Ga)Se2 (CIGS) 박막 태양전지는 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al 의 구조를 가지고 있다. CIGS 화합물은 direct bandgap 구조를 하고 있으며, 광흡수율이 다른 어떤 물질들 보다 뛰어나 박막으로도 충분히 태양광을 흡수할 수 있다. 또한 Ga의 도핑 농도에 따른 밴드갭 조절도 가능하다. 이러한 성질들로 인해 현재 박막태양전지로서 20.1%의 최고효율을 가지고 있다.[1] CIGS 박막 태양전지에서 p-CIGS layer와 스퍼터링으로 증착되는 n-ZnO layer사이의 buffer 층으로 chemical bath deposition (CBD)-CdS 박막을 주로 사용한다. CBD-CdS 박막은 n-ZnO 스퍼터로 증착 시킬 때, CIGS 층의 손상을 최소화하고, 이 두 층 사이에서의 격자상수와 밴드갭의 차이를 줄여주어 CIGS 박막태양전지의 효율을 증가 시키는 역할을 한다. 하지만, Cd (카드뮴)의 심각한 독성과 낮은 밴드갭(2.4eV)으로 인해 CIGS 층에서의 광흡수율을 줄여, CdS를 대체할 새로운 buffer 층의 필요성이 대두되었다.[2] 그 대안으로 ZnS, Zn(O, S, OH), (Zn, Mg)O, In2S3 같은 물질이 연구되고 있다. 현재 CBD-ZnS를 buffer 층으로 사용한 CIGS 박막태양전지의 효율은 최고 18.6%로 CBD-CdS의 최고효율보다는 약 1.5% 낮지만, ZnS가 높은 밴드갭(3.7~3.8eV)과 Cd-free 물질이라는 점에서 CdS를 대체할 물질로 각광받고 있다. 본 연구에서는 기존의 CdS 박막을 제조하는 방법과 같은 방법인 CBD를 이용하여 ZnS 박막을 제조하였다. ZnS 박막을 제조하기 위해서는 Zinc sulfate, Thiourea, 암모니아가 사용된다. 암모니아의 mol 농도에 따른 CBD-ZnS/CIGS 박막태양전지의 효율 변화를 관찰하기 위해 암모니아의 mol 농도는 1 mol, 2 mol, 3 mol, 4 mol, 5 mol, 6 mol, 그 이상의 과량을 사용하여 실험하였다. 실험 결과, 암모니아농도 5 mol에서 효율 13.82%를 확인할 수 있었다. 최고효율을 보인 조건인 암모니아 농도가 5 mol 일 때, Voc는 0.602V, Jsc는 33.109mA/cm2, FF는 69.4%를 나타내었다.

• 전기화학회지
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• 제10권4호
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• pp.262-264
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• 2007

This paper describes a two-step approach for the electrochemical deposition of CdZnS thin films on the polycrystalline Au electrode. Initially, an Au substrate is electrochemically modified with a sulfur layer. In the second step, the layer is electroreduced to $S^{2-}$ in the electrolyte dosed with the requisite amount of $Cd^{2+}$ and $Zn^{2+}$ ions to generate CdZnS films in situ. This approach was validated using a combination of linear sweep voltammetry and electrochemical quartz crystal microgravimetry. Thus synthesized CdZnS thin films have different composition depending on the composition of electrolytes. CdZnS thin films are characterized by energy-dispersive X-ray analysis and Raman spectroscopy.

• 한국초전도ㆍ저온공학회논문지
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• 제11권4호
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• pp.16-19
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• 2009

The influence of nanorods grown on substrate prior to YBCO deposition has been investigated. We studied the microstructures and characteristic of $YBa_2Cu_3O_{7-\delta}$ films fabricated on $SrTiO_3$ (100) substrates with ZnO nanorods as one of the possible pinning centers. The growth density of ZnO nanorods was modulated through Au nanoparticles synthesized on top of the STO(100) substrates with self assembled monolayer. The density of Au nanoparticles is approximately $240{\sim}260\;{\mu}m^{-2}$ with diameters of 41~49 nm. ZnO nanorods were grown on Au nanoparticles by hot-walled PLD with Au nanoparticles. Typical size of ZnO nanorod was around 179 nm in diameter and $2{\sim}6\;{\mu}m$ in length respectively. The ZnO nanorods have apparently randomly aligned and exhibit single-crystal nature along (0002) growth direction. Our preliminary results indicate that YBCO film deposited directly on STO substrate shows the c-axis orientation while YBCO films with ZnO nanorods exhibit any mixed phases without any typical crystal orientation.

• Applied Microscopy
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• 제25권3호
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• pp.75-81
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• 1995

이상과 같은 실험에서 다음과 같은 사실을 요약할 수 있다. 1) ZnSSe/GaAs 에피층에는 많은 양의 적층결함과 전위 등의 결정결함이 존재하고 이들은 표면부 보다는 계면부에 더 많이 존재한다. 그러나 에피층은 기판과 pseudomorphic 성장을 이루고 있다. 2) ZnSSe/GaAs 계면에는 5nm 크기의 높이차가 나는 굴곡이 존재하며 ZnSe 버퍼 층에 관계없이 적층결함이 존재하고, 에피층 결정이 약간 기울어져서 므와레 줄무늬 패턴도 존재한다. 3) ZnSSe/GaAs 계면에는 성장 중에 S의 침투로 인한 <111>방향으로 피트가 형성되었음이 관찰되었고 이는 결함 생성 소스로 작용한다 4) 15nm 높이차가 나는 계면이 발견되었으나 기판과 정합을 이루고 있고 주변에는 적층결함도 존재하지 않는다. 그러나 미세한 므와레 줄무의형태가 존재하였다.

• 한국재료학회지
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• 제30권6호
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• Journal of the Optical Society of Korea
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• 제10권4호
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• pp.184-187
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• 2006

For resonant excitation of the ground state $1s^e-1S^h_{3/2}$, dynamics of 'the electron-hole pair in a CdSe quantum dot was investigated by degenerate pump-probe measurement. At low e-h pair densities, the decay of $1s^e-1S^h_{3/2}$ state is dominated by radiative recombination. As the number of the electron-hole pairs increases, new decay features become significant. Theoretical comparison suggests this is attributed to the bi-molecular and Auger-type scattering.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.6-10
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• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.148-148
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• 2015

Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

• 한국결정성장학회지
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• 제13권4호
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.