• 한국전기전자재료학회논문지
• /
• 제23권1호
• /
• pp.14-17
• /
• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.539-542
• /
• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions at the calcine temperature of $700^{\circ}C$ and sintering temperature of $1300^{\circ}C$ in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on Si(100) substrate and prepared $ZnGa_2O_4$ phosphor thin film is annealed by rapid thermal processor(RTP) at $700^{\circ}C$, 15sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodoluminescenre(CL) spectrums of $ZnGa_2O_4$ phosphor thin film show main peak of 420nm and maximum intensity at the substrate temperature of $500^{\circ}C$ and annealing temperature of $700^{\circ}C$ 15sec.

• 한국전기전자재료학회논문지
• /
• 제19권8호
• /
• pp.749-753
• /
• 2006

The $ZnGa_2O_4$ phosphor thick films were fabricated using a screen printing method on Si(100) substrates at various sintering temperatures. The XRD patterns show that the $ZnGa_2O_4$ thick films have a (311) main peak and a spinel structure with increasing sintering temperatures. The particle sizes of $ZnGa_2O_4$ phosphor were about 100 nm and the thickness of $ZnGa_2O_4$ thick film was $10{\mu}m$. The CL and PL properties of $ZnGa_2O_4$ showed main peak of 420nm and maximum intensity at the sintering temperature of $900^{\circ}C$. These results indicate that $ZnGa_2O_4$ phosphor thick films hold promise for displays such as plasma display panel and field emission display.

• 한국전기전자재료학회논문지
• /
• 제22권2호
• /
• pp.158-162
• /
• 2009

$Zn_2SiO_4$:Mn green phosphors doped with Ga for PDP were synthesized by solid state reaction method. Photoluminescence measurements showed a new emission peak at around 600 nm for $Zn_2SiO_4$:Mn phosphors doped with Ga. Also, the luminescent color with doping $Ga^{3+}$ in the $Zn_2SiO_4$:Mn phosphors changed to green from yellowish green. Consequently, the new peak and charge of the luminescent color in the $Zn_2SiO_4$:Mn, Ga phosphors were attributed to $^2E{\rightarrow}^6A_2$ transition of $Mn^{4+}$.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권10호
• /
• pp.1040-1046
• /
• 1996

Low voltage phosphor, ZnGa$_{2}$O$_{4}$:Mn, was synthesized and sintered at the high temperature in Ar or vacuum. By XRD analysis, it is confirmed that poly crystalline ZnGa$_{2}$O$_{4}$:Mn solid solution was formed. From EPMA analysis of the samples prepared in Ar and vacuum, the change of oxygen content was investigated and as a result, it was observed that the oxygen amounts were reduced in ZnGa$_{2}$O$_{4}$:Mn prepared in vacuum. It caused the deficiency in oxygen amounts in the phosphor and then consequently, it results in the formation of the energy level near 513 nm. It contributes to the improvement of the brightness of ZnGa$_{2}$O$_{4}$:Mn.

• 한국결정성장학회지
• /
• 제26권3호
• /
• pp.109-114
• /
• 2016

용매열합성법과 하소 과정으로 이루어진 두 단계 공정을 통해 단분산된 마이크로 크기의 구형 $ZnGa_2O_4$ 입자를 합성하였다. 합성된 3차원 구조의 구형 $ZnGa_2O_4$ 입자는 핵 생성과정에서 발생된 $ZnGa_2O_4$ 핵들이 자기 조립에 의해 형성된다. 이렇게 3차원 구조의 입자를 형성하는 원리인 '핵 성성'과 '자기 조립' 과정은 계면활성제인 PEG(polyethylene glycol)의 영향을 받는다. 그 이유는 계면활성제인 PEG의 농도가 임계응집농도(critical aggregation concentration)를 결정짓기 때문이다. 그리고 $ZnGa_2O_4$ 단상 합성을 위해 원료인 zinc acetate의 양을 조절했으며, 최적의 하소 조건을 결정하고자 TG-DTA를 통해 열적 거동을 확인했다. 또한 열처리 전 모체와 $900^{\circ}C$에서 1시간의 열처리 과정을 거친 산화물을 구성하는 작용기의 변화를 규명하기 위해 FT-IR을 측정하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제12권1호
• /
• pp.11-15
• /
• 2011

In this study, $ZnGa_2O_4$ phosphors in its application to field emission displays and electroluminescence were synthesized through the precipitation method and $Mn^{2+}$ ions. A green luminescence activator, $Cr^{3+}$ ions, and a red luminescence activator were separately doped into $ZnGa_2O_4$, which was then screen printed to an indium tin oxide substrate. The thick films of the $ZnGa_2O_4$ were deposited with the various thicknesses using nano-sized powder. The best luminescence characteristics were shown at a thickness of 60 ${\mu}m$. Additionally, green-emission $ZnGa_2O_4:Mn^{2+}$ and red-emission $ZnGa_2O_4:Cr^{3+}$ phosphor thick films, which have superior characteristics, were manufactured through the screen-printing method. These results indicate that $ZnGa_2O_4$ phosphors prepared through the precipitation method have wide application as phosphor of the full color emission.

• 한국진공학회지
• /
• 제15권5호
• /
• pp.541-546
• /
• 2006

본 연구에서는 박막형 $ZnGa_2O_4:Mn$ 산화물 형광체의 음극선루미느센스 특성과 구조적 성질에 대하여 field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), 그리고 cathodoluminescence (CL) 방법을 이용하여 조사하였다. $ZnGa_2O_4:Mn$ 형광체 타겟으로부터 $Mn^{2+}$ 이온의 $^4T_1{\rightarrow}^6A_1$ 전이에 의한 506nm 파장에서의 PL emission 스펙트럼이 관찰되었다. 색좌표는 x = 0.09, y = 0.67 이었다. $ZnGa_2O_4:Mn$ 박막의 여기 스펙트럼은 $Mn^{2+}$ 이온 흡수에 의한 294 nm의 피크 파장을 나타내었다. 낮은 압력에서 증착한 $ZnGa_2O_4:Mn$ 형광체 박막은 고밀도의 치밀한 단면구조를 보였고, 높은 세기의 음극선루미느센스가 505 nm 피크 파장에서 나타났다. 표면 거칠기가 음극선루미느센스의 세기에 미치는 영향은 관찰되지 않았다.

• 한국세라믹학회지
• /
• 제38권2호
• /
• pp.112-116
• /
• 2001

고상반응법에 의한 제조한 ZnGa$_2$O$_4$형광체에 Li 및 Tm 원소를 도핑함에 따른 발광특성을 조사하였다. 254nm 여기 하에서, 환원 처리된 ZnGa$_2$O$_4$형광체는 245nm에서 흡수피크와 380nm에서 발광피크를 나타내며, 이는 스피넬 구조에서 Ga$^{3+}$ 이온의 $^4$T$_2$$\longrightarrow$$^4$A$_2$천이에 기인한다. ZnGa$_2$O$_4$형광체에 있어서 Li 및 Tm을 도핑했을 경우가 도핑하지 않은 시료에 비해 발광강도 및 색순도가 개선되었으며, Li 및 Tm을 각각 0.1 mol, 0.01 mol 첨가했을 때 가장 우수한 발광강도 및 색순도 특성을 보였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.301-302
• /
• 2005

The $ZnGa_2O_4$:Cr phosphor was synthesized through solid-state reactions at the various molar ratio of Cr from 0.002 % to 0.01 %. The XRD patterns show that the Cr-doped $ZnGa_2O_4$ has a (311) main peak and a spinel phase. Also the emission wavelength shills from 510 to 705 nm in comparison with $ZnGa_2O_4$:Mn when Cr is doped in $ZnGa_2O_4$. These results indicate that $ZnGa_2O_4$ phosphors hold promise for potential applications in field-emission display devices with high brightness operating in full color regions.