Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Luminescence Characteristics of ZnGa2O4 Phosphor Thick Films Prepared by Screen Printing Method

스크린 프린팅법을 이용한 ZnGa2O4 형광체 후막의 발광특성

  • 이승규 (경원대학교 전기정보공학과) ;
  • 박용서 (경원대학교 전기정보공학과) ;
  • 최형욱 (경원대학교 전기정보공학과)
  • Published : 2006.08.01
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Abstract

The $ZnGa_2O_4$ phosphor thick films were fabricated using a screen printing method on Si(100) substrates at various sintering temperatures. The XRD patterns show that the $ZnGa_2O_4$ thick films have a (311) main peak and a spinel structure with increasing sintering temperatures. The particle sizes of $ZnGa_2O_4$ phosphor were about 100 nm and the thickness of $ZnGa_2O_4$ thick film was $10{\mu}m$. The CL and PL properties of $ZnGa_2O_4$ showed main peak of 420nm and maximum intensity at the sintering temperature of $900^{\circ}C$. These results indicate that $ZnGa_2O_4$ phosphor thick films hold promise for displays such as plasma display panel and field emission display.

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References

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