• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.105-108
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• 1998

Pt-WO$_3$-Si$_3$N$_4$-SiO$_2$-Si-Al 캐패시터를 이용한 NO$_2$ 가스 센서를 개발하였다. 표준 실리콘 MNOS구조에 촉매 게이트로 Pt와 가스 흡착층으로 WO$_3$를 이용함으로서 전통적인 세라믹 가스 센서보다 낮은 온도에서 NO$_2$ 가스를 감지할 수 있었다. 은도 변화와 NO$_2$ 가스 농도의 변화에 따라서 디바이스의 NO$_2$ 가스 감도를 조사하였다. Pt-WO$_3$ 계면에서 NO$_2$ 이온농도의 변화에 기초로 한 가스 감지 모델을 제시하였다. 제시된 가스 감지 모델을 계면에서의 가스 반응 속도론에 의하여 분석함으로서 확인하였다.

• 센서학회지
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• 제18권4호
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• pp.263-268
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• 2009

With the increasing number of automobiles, the problem of air pollution from the exhaust gases of automobiles has become a critical issue. The principal gases that cause air pollution are nitrogen oxide or NO$_x$(NO and NO$_2$), and CO. Because NO$_x$ gases cause acid rain and global warming and produce ozone(O$_3$) that leads to serious metropolitan smog from photochemical reaction, they must be detected and reduced. Mixtures of WO$_3$ and $In_2O_3$(WO$_3$:$In_2O_3$=10:0, 7:3, 5:5, 3:7, and 0:10 in wt.%), which are NO$_x$ gas-sensing materials, were prepared, and thick-film gas sensors that included a heater and a temperature sensor were fabricated. Their sensitivity to NO$_x$ was measured at 250$\sim$400$^{\circ}C$ for NO$_x$ concentrations of 1$\sim$5 ppm. The $In_2O_3$ thick-film sensor showed excellent sensitivity($R_{gas}/R_{air}$=10.22) at 300$^{\circ}C$ to 5-ppm NO. The response time for 70 % saturated sensitivity was about 3 seconds, and the sensors exhibited very fast reactivity to NO$_x$.

• 한국전기전자재료학회논문지
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• 제11권11호
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• pp.1001-1006
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• 1998

$WO_3$ based semiconduction sensor have been reported to have excellent sension properties to $NO_x$ gases by many researchers. In this study appropriate $WO_3$ precursor have been chosen and thin film sensors were fabricated by metallo organic deposition process. Their sensing characteristics were investigated as a function of NO concentration, heat treatment, and measuring temperature. Tungsten dichloro triethoxide was found to be a good precursor for $WO_3$ thin film in this method. Samples heat treated at $600^{\circ}C$ showed sensitivity (S) 200 to 50 ppm NO gas when measuring temperature was $150^{\circ}C$.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1998년도 제1회 총회 및 추계학술발표회
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• pp.26-26
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.187-189
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• 1995

A Surface Acoustic Wave Gas sensor for NO, CO, H$_2$gas detection was designed fabricated, and tested. A delay line device was designed to composite a single mode SAW oscillator which enables to measure a SAW velocity. To reduce the effect of temperature and humidity, dual delay line oscillator circuit was used. And final output was measured by digital frequency counter. NO, CO, H$_2$gas were detected by WO$_3$thin film deposited on the path of the Delay Line.

• 한국재료학회지
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• 제28권1호
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• pp.12-17
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• 2018

$In_2O_3$ doped $WO_3$ powders were prepared by a polymer solution route and their $NO_2$ gas sensing properties were analyzed. The synthesized powders showed nano-sized particles with specific surface areas of $6.01{\sim}21.5m^2/g$ and the particle size and shape changed according to the content of $In_2O_3$. The gas sensors fabricated with the synthesized powders were tested at operating temperatures of $400{\sim}500^{\circ}C$ and 100~500 ppm concentrations of $NO_2$ atmosphere. The particle size and $In_2O_3$ content affected on the initial sensor resistance in an air atmosphere. The highest sensitivity (8.57 at $500^{\circ}C$), which was 1.77 higher than the sensor consisting of the pure $WO_3$ sample, was measured in the 0.5 mol% $In_2O_3$ doping sample. In addition, the response time and recovery time were improved by the addition of $In_2O_3$.

• 센서학회지
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• 제7권3호
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• pp.188-196
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• 1998

$WO_{3}$계 n-형 반도체 가스센서의 검지특성 및 전기적 특성을 조사하였다. 공기중에서 결합제가 첨가되지 않은 $WO_{3}:TiO_{2}$(4 wt. %) 센서의 낱알경계에서의 전위장벽의 크기는 0.26 V로 나타났으며, 결합제로서 $Al_{2}O_{3}$, PVA (polyvinyl alcohol ), silica sol이 첨가된 센서의 경우는 전위장벽이 각각 0.17, 0.22, 0.26 V로 관측되었다. 이들 시료를 $NO_{x}$가 120 ppm 첨가된 분위기에 노출시켰을 때, 결합제가 첨가되지 않은 센서의 경우는 낱알경계에서의 전위장벽이 0.59 V로 증가하였으며, 결합제로서 $Al_{2}O_{3}$, PVA, silica sol이 첨가된 경우는 전위장벽이 각각 0.43, 0.66, 0.52 V로 나타나, PVA가 첨가된 센서에서 전위장벽의 변화가 가장 높아 감도가 우수하게 되는 것을 알 수가 있었다. 한편 센서 최적 작동온도 이상의 온도에서 나타나는 감도의 감소는 흡착가스 입자의 탈착보다는 공기중에서 다결정이 보이는 저항의 온도 의존성에 따라 나타남이 판명되었다. 또한 결합제가 첨가되지 않은 센서와 결합제로서 Pt가 첨가된 센서의 경우, CO가 250 ppm 존재할 때까지도 전위장벽의 크기가 약 0.2 V로 공기중에서와 비슷한 크기를 나타내어, CO와 $NO_{x}$가 혼합된 분위기에서 $NO_{x}$만을 선택적으로 검지하는데 유리함이 밝혀졌다.

• 센서학회지
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• 제21권4호
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• pp.283-286
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• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.471-474
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• 2000

A flat type microgas sensor was fabricated on the p-type silicon wafer with low stress S $i_3$ $N_4$, whose thickness is 2${\mu}{\textrm}{m}$ using MEMS technology and its characteristics were investigated. W $O_3$thin film as a sensing material for detection of N $O_2$gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$~$600^{\circ}C$) for one hour. N $O_2$gas sensitivities were investigated for the W $O_3$thin films with different annealing temperatures. The highest sensitivity when operating at 20$0^{\circ}C$ was obtained for the samples annealed at $600^{\circ}C$. As the results of XRD analysis, the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibit higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}$ $R_{air}$ operating at 20$0^{\circ}C$ to 5 ppm N $O_2$of the sample annealed at $600^{\circ}C$ were approximately 90. 90.

• 한국산학기술학회논문지
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• 제4권3호
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• pp.139-144
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• 2003

평면형 마이크로가스센서를 MEMS 기술을 이용하여 제작하였다. NO₂ 가스의 감지를 위한 감지물질로서 이용되는 WO₃ 박막은 텅스텐 타겟을 스퍼터링한 후에 1시간 동안 여러 온도에서 열산화법에 의해 형성하였다. NO₂ 감도(Rgas/Rair)는 열처리 온도에 따른 WO₃ 박막에 대해 조사하였다. 동작온도가 200℃일 때 600℃에서 열처리한 시편의 NO₂가스감도가 가장 높았다. XRD의 결과는 열처리한 시편은 triclinic구조와 orthorhombic구조가 혼합된 다결정상을 보여주었다 또한 시편은 triclinic구조가 적을수록 더 높은 가스 감도를 보여주었다 600℃에서 열처리한 시편의 20℃의 동작온도일 때 5 ppm NO₂ 가스감도는 약 90이었다.