Low-Voltage Driving of Indium Zinc Oxide Transistors with Atomic Layer Deposited High-k Al2O3 as Gate Dielectric (원자층 증착을 이용한 고 유전율 Al2O3 절연 박막 기반 Indium Zinc 산화물 트랜지스터의 저전압 구동)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.30 no.7
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- pp.432-436
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- 2017