• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.260-264
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• 2007

We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high(1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl at an initial luminance of $300cd/m^2$.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.213-217
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• 1996

HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.220-228
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• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Journal of IKEEE
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• v.26 no.3
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• pp.422-429
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• 2022

A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.169-175
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• 2009

In this experiment molybdeum oxide($MoO_3$) films were prepared by a magnetic null discharge(MND) sputtering system and fundamental properties by XRD, XPS and SEM analysis were investigated. The initial and mean insulation resistance of the same with $MoO_3$ film were about 1.4[$M{\Omega}$] and 800[$k{\Omega}$] under the condition of applied voltage of 400[V]. The preferred orientation in the films changed from(100) to (210) with substrate temperature. Two XPS peaks of the $MoO_3$ photoelectron were detected at the binding energies of 228.9[eV] and 232.4[eV], while the binding energy of the O1s peak was 532.6[eV]. The substrate temperature and reactivity gives large effects to the structure and growth of the film and system is also very useful for performing the uniform reactive deposition. It can be found from the result of a $MoO_3$ film deposition that the system is very useful for performing the uniform reactive sputtering.

• Progress in Medical Physics
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• v.3 no.1
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• pp.9-18
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• 1992

In this study, beta-eucryptite is fabricated and the thermal parameters of this material have been investigated. The thermoluminescence from 4MeV X-ray irradiated beta-eucryptite have been measured over the temperature range of 300K-600K. Thermoluminescence curve from X-ray irradiated beta-eucryptite shows five peaks located at 342K, 392K, 438K, 474K, and 527K. $\tau$, $\delta$ and $\omega$ of peak at 527K are 35K, 39K and 74K, respectively and this peak is found to be 2nd order kinetics. The activation energy of peak shape method is calculated to be 1.03eV and the frequency factor for 527K curve is calculated to be 3.9x10$\^$8/sec$\^$-1/. Based on the various heating rates methods, the activation energy of the peak is computed to be 1.02${\pm}$0.05eV that is similar to 1.19${\pm}$0.03eV of initial rise method. The linearity of thermoluminescence intensity and radiation flux is valid up to 50Gy and beyond higher dose the supralinearity and saturation come out.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.255-262
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• 1994

Arc melted Ti-5Bi alloy was oxidized by thermal oxidation method. In the present study free energy efficiency(${\eta}_e$) of titanium oxide electrode(TOE) was measured as a function of light intensity and light energy. Flat-band potential of TOE was measured as a function of the light intensity and the solution pH. The ${\eta}_e$ of TOE increased with the increase of light intensity and tight energy to maximum value of 3.2% and 13%, respectively, at $0.2W/cm^2$ and 4.0eV. The ${\eta}_e$ was strongly dependent on the magnitude of the bias voltage. Maximum value was found at 0.5V bias. Photocurrent of TOE was controlled by electron-hole pair generation in depletion layer. The flat-band potential of the illuminated TOE shifted to -0.065V/decade with increasing light intensity. With the decrease of pH of electrolyte, flat-band potential shifted to anodic direction. The experimental slope was in good agreement with the Nernstian value of 0.059V/pH decade.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.8 no.2
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• pp.107-115
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• 2015

In this paper, a small-area 32-bit differential paired eFuse OTP memory for power ICs is designed. In case of smaller number of rows than that of columns for the OTP memory cell array, a scheme for the cell array reducing the number of SL driver circuits requiring their larger layout areas by routing the SL (source line) lines supplying programming currents for eFuse links in the row direction instead of the column direction as well as a core circuit is proposed. In addition, to solve a failure of being blown for non-blown eFuse links by the electro-migration phenomenon, a regulated voltage of V2V ($=2V{\pm}0.2V$) is used to a RWL (read word line) driver circuit and a BL (bit line) pull-up driver circuit. The layout size of the designed 32-bit eFuse OTP memory is $228.525{\mu}m{\times}105.435{\mu}m$, which is confirmed to be 20.7% smaller than that of the counterpart using the conventional cell array routing, namely $197.485{\mu}m{\times}153.715{\mu}m$.

• Korean Journal of Clinical Laboratory Science
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• v.39 no.2
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• pp.113-121
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• 2007

Hearing loss is a common congenital disorder that is frequently associated with mutations in the Cx26 gene (GJB2). Recently, the mutation analysis of GJB2 has been used in a newborn screening test for the detection of hearing impairment. Population-based studies should be performed before the application of genetic testing for the identification of deaf newborns. In this study, 8 positions of GJB2 mutations-including 35delG, 167delT, 235delC, V27I, V37I, M34T, E114G, and I203T-were analyzed using PCR-direct sequencing in a total of 437 healthy Korean neonates. DNAs from dried blood spots were extracted using a commercial DNA extraction kit. The PCR-amplified products (783 bps) of the GJB2 gene were detected using 2% agarose gel electrophoresis and subjected to direct sequencing. The sequences were compared with those in the GenBank database by using the BLAST program. In this study, 5 GJB2 mutations -including V27I (79G>A), V37I (109G>A), E114G (341A>G), I203T (608T>C), and 235delC- were found. Of the 437 neonate samples, 301 subjects showed GJB2 mutations (68.9%, 301/437). The V27I mutation was found in 271 subjects and was the most frequent (62.0%, 271/437). The E114G, I203T and V37I mutations were shown in 146, 17 and 14 subjects, respectively. The 235delC mutation was found in 1 subject. The E114G mutation was frequently accompanied by the V27I mutation. V27I/E114G (97.2%, 143/147) was the most common double mutation and 3 subjects had the double mutation V27I/I203T. A triple mutation, V27I/E114G/I203T, was found in 1 subject. In conclusion, PCR-direct sequencing is a convenient tool for the rapid detection of GJB2 mutations and this data might provide information for the genetic counseling of the GJB2 gene.

• Kyungpook Mathematical Journal
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• v.58 no.4
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• pp.747-759
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• 2018

A graph G = (V (G), E(G) of order n = |V (G)| and size m = |E(G)| is said to be odd harmonious if there exists an injection $f:V(G){\rightarrow}\{0,\;1,\;2,\;{\ldots},\;2m-1\}$ such that the induced function $f^*:E(G){\rightarrow}\{1,\;3,\;5,\;{\ldots},\;2m-1\}$ defined by $f^*(uv)=f(u)+f(v)$ is bijection. While a bipartite graph G with partite sets A and B is said to be bigraceful if there exist a pair of injective functions $f_A:A{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ and $f_B:B{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ such that the induced labeling on the edges $f_{E(G)}:E(G){\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ defined by $f_{E(G)}(uv)=f_A(u)-f_B(v)$ (with respect to the ordered partition (A, B)), is also injective. In this paper we prove that odd harmonious graphs and bigraceful graphs are equivalent. We also prove that the number of distinct odd harmonious labeled graphs on m edges is m! and the number of distinct strongly odd harmonious labeled graphs on m edges is [m/2]![m/2]!. We prove that the Cartesian product of strongly odd harmonious trees is strongly odd harmonious. We find some new disconnected odd harmonious graphs.