• Journal of the Korean Society of Radiology
• /
• v.13 no.5
• /
• pp.819-824
• /
• 2019

In this study, we proposed a method for identifying isotopes generated from high-energy proton $^{nat}Pb$(p,xn) nuclear reactions through the difference of gamma rays generated through nuclear reactions using different proton energies. The experiment was performed by using a high energy proton generated from a 100 MeV proton linear accelerator of the Korea Atomic Energy Research Institute. Gamma rays generated by various nuclides generated through proton nuclear reactions were measured using a gamma-ray spectroscopy system composed of HPGe detectors. Gamma-ray standard sources were used for accurate energy calibration and efficiency measurements of HPGe gamma-ray detectors. For the proposed method, 100 and 60 MeV proton energy beams were used for the same natural lead samples. This method was found to be very effective in identifying nuclides produced by comparing gamma rays generated from the same sample with each other. The results of this study are expected to be very effective in obtaining other proton nuclear reaction results in the future.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.25 no.4B
• /
• pp.624-628
• /
• 2000

In this paper, the phenomenon to show in CDMA handset in case of which CDMA handset do not meet Traffic Rho value of IS-98B specifications, which have minimum requirements of CDMA handset about electrical performance is analyzed. This paper proposed method to improve Traffic Rho through improving the matching circuit of TX IF SAW FILTER and deleting noise of LDO(Low Dropout Regulator) to generate 3.OV_TX in TX block. HP8924C(CDMA Mobile Station Tester Set) and HP8595E(Spectrum Analyzer) measures the improved CDMA waveform.

• Proceedings of the KIEE Conference
• /
• 1988.11a
• /
• pp.168-171
• /
• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

• Elastomers and Composites
• /
• v.28 no.2
• /
• pp.103-107
• /
• 1993

To make new filler for conducting rubber, the sample of perovskite-related ferrite system $Dy_{2-x}Sr_{1+x}Fe_2O_{7-y}$ (x=0.0, 0.5, 1.0, 1.5, and 2.0) were synthesized at 1473K in air. $M{\ddot{o}}ssbauer$ spetrum of x=0.0 sample shows typical six line pattern with $M{\ddot{o}}ssbauer$ parameters, $I.S=3.6{\times}10^{-1}mm/sec,\;E_Q=-7.0{\times}10^{-2}mm/sec,\;H_{int}=5.19{\times}10^2\;Koe$. In case of x=2.0, the spectrum is composed of single line exhibiting coexistance of $Fe^{3+}(I.S.=3.7{\times}10^{-1}mm/sec)$ ions and $Fe^{4+}(I.S.=-1.9{\times}10^{-1}mm/sec)$ ions. With increase in x value electrical conductivity at constant temperature sharply increased and the activation energies decreased from $3.8{\times}10^{-1}\;to\;1.9{\times}10^{-1}\;eV$.

• Electrical & Electronic Materials
• /
• v.16 no.9
• /
• pp.63.2-64
• /
• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of Sensor Science and Technology
• /
• v.23 no.2
• /
• pp.134-141
• /
• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• Journal of Sensor Science and Technology
• /
• v.10 no.6
• /
• pp.328-337
• /
• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Safety and Health at Work
• /
• v.8 no.3
• /
• pp.237-245
• /
• 2017

Background: Solar furnaces are used worldwide to conduct experiments to demonstrate the feasibility of solar-chemical processes with the aid of concentrated sunlight, or to qualify high temperature-resistant components. In recent years, high-flux solar simulators (HFSSs) based on short-arc xenon lamps are more frequently used. The emitted spectrum is very similar to natural sunlight but with dangerous portions of ultraviolet light as well. Due to special benefits of solar simulators the increase of construction activity for HFSS can be observed worldwide. Hence, it is quite important to protect employees against serious injuries caused by ultraviolet radiation (UVR) in a range of 100 nm to 400 nm. Methods: The UV measurements were made at the German Aerospace Center (DLR), Cologne and Paul-Scherrer-Institute (PSI), Switzerland, during normal operations of the HFSS, with a high-precision UV-A/B radiometer using different experiment setups at different power levels. Thus, the measurement results represent UV emissions which are typical when operating a HFSS. Therefore, the biological effects on people exposed to UVR was investigated systematically to identify the existing hazard potential. Results: It should be noted that the permissible workplace exposure limits for UV emissions significantly exceeded after a few seconds. One critical value was strongly exceeded by a factor of 770. Conclusion: The prevention of emissions must first and foremost be carried out by structural measures. Furthermore, unambiguous protocols have to be defined and compliance must be monitored. For short-term activities in the hazard area, measures for the protection of eyes and skin must be taken.

• Journal of the Korean Vacuum Society
• /
• v.18 no.3
• /
• pp.208-212
• /
• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Korean Chemical Engineering Research
• /
• v.58 no.3
• /
• pp.486-492
• /
• 2020

The method for preparing a perovskite-type bismuth ferrite (BFO) photocatalyst which reacts to visible LED light and the characteristics of visible light photocatalysis were investigated. BFO was prepared according to the sol-gel method. The prepared BFO consisted mainly of BiFeO₃ structure and formed a nano-sized crystal including Bi₂₄Fe₂O₃₉ structure. The BFO nano crystallines were identified from the UV-visible diffuse reflectance spectra to absorb UV and visible light up to about 600 nm. The bandgap of the BFO determined from the diffuse reflectance spectrum was about 2.2 eV. Formaldehyde was decomposed by the photoreaction of BFO photocatalysts with the visible light LED lamps with wavelengths of 585 nm and 613 nm. The narrow bandgap of BFO led to elicit BFO photocatalytic activity in visible LED light.