• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.416-419
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• 2014

We grew a $Li_6Lu(BO_3)_3:Ce^{3+}$ single crystal as a new scintillator. And, the scintillation and thermoluminescence properties of the scintillator were determined. The emission spectrum of $Li_6Lu(BO_3)_3:Ce^{3+}$ is located in the range of 370~530 nm, peaking at 416 nm and 439 nm, due to the $5d{\rightarrow}4f$ transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed two components. The fast component is 34 ns (84%) and the slow component is 125 ns (16%) of the crystal. The afterglow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The thermoluminescence trap are composed a trap. The determined activation energy (E) and frequency factor (s) of the TL trap are 1.05 eV and $4.4{\times}10^{10}s^{-1}$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.943-949
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• 2008

We report on the development of transition edge sensors for x-ray detection. The sensor technology was based on the fabrication of a superconducting film on a thin membrane. A bilayer of a superconductor, Ti, and a noble metal, Au, was e-beam evaporated on a micromachined SiNx. Another Au layer was evaporated on the two side edges of the bilayer in order not to be affected by structural imperfections at the boundaries. With the method described in the present report, the superconducting transition temperature of the device was consistently achieved to near 80 mK with a sharp transition. The energy spectrum ueasured with the device provided 37 eV FWHM for 5.9 x-rays. We also discuss the design and fabrication considerations as well as the performance of the device in detail.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.794-799
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• 1997

Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{\circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $\AA$ to 8000$\AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$\times$10$^{-7}$ ($\Omega$.cm)$^{-1}$ , and 3~4$\times$10$^{-6}$ ($\Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$\AA$-thick poly-Si films.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.240-242
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• 1994

Spectroscopic ellipsometry(SE) was employed to characterize the Si/$Si_{1-x}Ge_x$ heterostructure. The dielectric function spectrum of $Si_{1-x}Ge_x$ at an arbitrary x value in the spectral range of $1.5{\sim}4.5\;eV$ was computed by EMA (effective medium approximation) model using the available optical constants measured at a number of fixed x values of Ge composition. The thickness and the Ge composition of $Si_{1-x}Ge_x$ measured by SE was compared with those measured by RBS. DC bias effect on the $E_2$ peak of dielectric function spectra was studied.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.737-743
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• 1998

The synthesis of $SrAI_2O_4:Eu^{2+}$ phosphor and its properties of both photoluminescence and long-phosphorescent were investigated as a function of sintering condition. Single phase of $SrAl_2O_4$ was obtained by sintering the mixtures of $SrCO_3$, $Eu_2O_3$, $AI_2O_34 and 3wt% $B_2O_3$ powders over 100$0^{\circ}C$ in Ar/H2 atmosphere. The optimum sintering condition for the long-phosphorescent phosphor of $SrAI_2O_4:Eu^{2+}$ was found at 130$0^{\circ}C$ for 3hours. The PL emission spectrum of $SrAI_2O_4:Eu^{2+}$ shows a maximum peak intensity at 520nm(2.384eV) with a broad emission extending from 450 to 650nm which resulted from the $4f^65d^1$$\rightarrow$$4f^7$ transition of $Eu^{+2}$ under 360nm exitation. Monitored at 520nm. the excita¬tion spectrum of $SrAI_2O_4:Eu^{2+}$ exhibits a maximum peak intensity at 360nm (3.44eV) with a broad absorption band extending from 250 to 480nm.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• Molecules and Cells
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• v.44 no.9
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• pp.688-695
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• 2021

The severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) pandemic has become a global health concern. Various SARS-CoV-2 vaccines have been developed and are being used for vaccination worldwide. However, no therapeutic agents against coronavirus disease 2019 (COVID-19) have been developed so far; therefore, new therapeutic agents are urgently needed. In the present study, we evaluated several hepatitis C virus direct-acting antivirals as potential candidates for drug repurposing against COVID-19. Theses include asunaprevir (a protease inhibitor), daclatasvir (an NS5A inhibitor), and sofosbuvir (an RNA polymerase inhibitor). We found that asunaprevir, but not sofosbuvir and daclatasvir, markedly inhibited SARS-CoV-2-induced cytopathic effects in Vero E6 cells. Both RNA and protein levels of SARS-CoV-2 were significantly decreased by treatment with asunaprevir. Moreover, asunaprevir profoundly decreased virion release from SARS-CoV-2-infected cells. A pseudoparticle entry assay revealed that asunaprevir blocked SARS-CoV-2 infection at the binding step of the viral life cycle. Furthermore, asunaprevir inhibited SARS-CoV-2 propagation in human lung Calu-3 cells. Collectively, we found that asunaprevir displays broad-spectrum antiviral activity and therefore might be worth developing as a new drug repurposing candidate for COVID-19.