• Title/Summary/Keyword: $V_E$ Spectrum

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Study on the Deintercalation of $H_2SO_4$--Intercalated Graphite Fiber ($H_2SO_4$-Intercalated Graphite Fiber의 Deintercalation에 관한 연구)

  • 김인기;최상흘;고영신
    • Journal of the Korean Ceramic Society
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    • v.30 no.10
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    • pp.797-802
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    • 1993
  • Graphite fiber intercalated compound was deintercalated at $25^{\circ}C$, 65% of humidity and its deintercalated compound was discussed, based on the X-ray diffraction analysis, electrical resistivity measurement, and UV/VIS spectrometer measurements. During deintercalation, the structure was changed in orderlongrightarrowdisorderlongrightarroworder, and resistivity was decreased in the disorder state of the structure, which reflectance minimum of the UV/VIS spectrum ranged from 660 to 750nm (1.88~1.65eV).

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Fabrication and Electric characteristics of PMDA/4,4-DDE Polyimide by Vapor Deposition Polymerization(VDP) Method (VDPM을 이용한 PMBA/4,4-DDE polyimide의 제작과 전기적특성)

  • 김형권;우호환;김종석;한상옥;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.139-142
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    • 1995
  • Polyimide(PI) thin films are fabricated by vapor deposition polymerization(VDP) from PMDA and DDE. The IR spectrum show that PAA the films are changed into PI films by curing. The activation energy of PI films is estimated to be 0.32 [eV] at the electric field of 0.133 [Mv/cm]. The resistivity is about 4.5${\times}$10$\_$16/ [$\Omega$$.$cm] at room temperature.

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A study on the Properties of $In_{l-x}Ga_{x}As$ Grown by the TGS Methods (TGS법으로 성장한 $In_{l-x}Ga_{x}As$의 특성에 관한 연구)

  • Lee, W.S.;Moon, D.C.;Kim, S.T.;Suh, Y.S.
    • Proceedings of the KIEE Conference
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    • 1988.11a
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    • pp.372-375
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    • 1988
  • The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

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CONTRIBUTIONS TO THE COSMIC RAY FLUX ABOVE THE ANKLE: CLUSTERS OF GALAXIES

  • KANG HYESUNG;RACHEN JORG P.;BIERMANN PETER L.
    • Journal of The Korean Astronomical Society
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    • v.29 no.spc1
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    • pp.271-272
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    • 1996
  • Assuming that particles can be accelerated to high energies via diffusive shock acceleration process at the accretion shocks formed by the infalling flow toward the clusters of galaxies, we have calculated the expected spectrum of high-energy protons from the cosmological ensemble of the cluster accretion shocks. The model with Jokipii diffusion limit could explain the observed cosmic ray spectrum near $10^{19}eV$ with reasonable parameters and models if about $10^{-4}$ of the infalling kinetic energy can be injected into the intergalactic space as the high energy particles.

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A Design of the Thickness Gauge Using the Compton Gamma-ray Backscattering

  • B.S. Moon;Kim, Y.K.;Kim, J.Y.;Kim, J.T.;C.E. Chung;S.B. Hong
    • Nuclear Engineering and Technology
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    • v.32 no.5
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    • pp.457-464
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    • 2000
  • In this paper, we describe the results of various calculations performed for a design of the thickness gauges that use the gamma-ray backscattering method. The radiation source is assumed to be the $_{24}$1Am(60keV gamma-ray) and the detector is a single crystal scintillator in a cylindrical form. The source is located at the center of the detector with the collimator of a cylindrical shape. First, when gamma-rays are incident on a material with a constant angle, we compute the variations of the spectrum for the photons scattered into different angular intervals. Next, we compute for an optimal size for the collimator cylinder for a fixed detector size and an optimal distance from the detector to the material. Finally, we compute the number of observed photons for different thickness of two different materials, a plastic film and an Al foil.

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Poly(1,4-bis((E)-2-(3-dodecylthiophen-2-yl)vinyl)benzene) for Solution Processable Organic Thin Film Transistor

  • Kim, Chul-Young;Park, Jong-Gwang;Lee, Min-Jung;Kwon, Soon-Ki;Kim, Jin-Hak;Shin, Sung-Chul;Kim, Yun-Hi
    • Bulletin of the Korean Chemical Society
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    • v.33 no.5
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    • pp.1659-1663
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    • 2012
  • New semiconducting polymer, poly[1,4-bis(($E$)-2-(5-bromo-3-dodecylthiophen-2-yl)vinyl)benzene], was designed, synthesized and characterized. The structure of polymer was confirmed by $^1H$-NMR, IR and elemental analysis. The polymer was soluble in specific organic solvent. The weight-average molecular weights (MW) of polymer was found to be 11,000 with polydispersity of 1.82. UV-Visible absorption spectrum showed the maximum absorption at 428 nm (in solution) and 438 nm (in film). The highest occupied molecular orbital (HOMO) energy of the polymer is -5.36 eV by measuring cyclic voltammetry (CV). A solutionprocessed polymer thin film transistor device shows a mobility of $8.59{\pm}10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, an on/off current ratio of $2.0{\times}10^4$.

Constraints on dark radiation from cosmological probes

  • Rossi, Graziano;Yeche, Christophe;Palanque-Delabrouille, Nathalie;Lesgourgues, Julien
    • The Bulletin of The Korean Astronomical Society
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    • v.40 no.1
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    • pp.44.1-44.1
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    • 2015
  • We present joint constraints on the number of effective neutrino species $N_{eff}$ and the sum of neutrino masses ${\Sigma}m_{\nu}$, based on a technique which exploits the full information contained in the one-dimensional Lyman-${\alpha}$ forest flux power spectrum, complemented by additional cosmological probes. In particular, we obtain $N_{eff}=2.91{\pm}0.22$ (95% CL) and ${\Sigma}m_{\nu}$ < 0.15 eV (95% CL) when we combine BOSS Lyman-${\alpha}$ forest data with CMB (Planck+ACT+SPT+WMAP polarization) measurements, and $N_{eff}=2.88{\pm}0.20$ (95% CL) and ${Sigma}m_{\nu}$ < 0.14 eV (95% CL) when we further add baryon acoustic oscillations. Our results tend to favor the normal hierarchy scenario for the masses of the active neutrino species, provide strong evidence for the Cosmic Neutrino Background from $N_{eff}{\approx}3$($N_{eff}=0$ is rejected at more than $14{\sigma}$), and rule out the possibility of a sterile neutrino thermalized with active neutrinos (i.e., $N_{eff}=4$) - or more generally any decoupled relativistic relic with $${\Delta}N_{eff}{\sim_=}1$$ - at a significance of over $5{\sigma}$, the strongest bound to date, implying that there is no need for exotic neutrino physics in the concordance ${\Lambda}CDM$ model.

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NUMERICAL CALCULATION OF TWO FLUID SOLAR WIND MODEL

  • KIM S.-J.;KIM K.-S.;MOON Y.-J.;CRO K.-S.;PARK Y. D.
    • Journal of The Korean Astronomical Society
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    • v.37 no.1
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    • pp.55-59
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    • 2004
  • We have developed a two fluid solar wind model from the Sun to 1 AU. Its basic equations are mass, momentum and energy conservations. In these equations, we include a wave mechanism of heating the corona and accelerating the wind. The two fluid model takes into account the power spectrum of Alfvenic wave fluctuation. Model computations have been made to fit observational constraints such as electron($T_e$) and proton($T_p$) temperatures and solar wind speed(V) at 1 AU. As a result, we obtained physical quantities of solar wind as follows: $T_e$ is $7.4{\times}10^5$ K and density(n) is $1.7 {\times}10^7\;cm^{-3}$ in the corona. At 1 AU $T_e$ is $2.1 {\times} 10^5$ K and n is $0.3 cm^{-3}$, and V is $511 km\;s^{-1}$. Our model well explains the heating of protons in the corona and the acceleration of the solar wind.

Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Sing1e Crystal Thin Films (Hot Wall Epitaxy (HWE)에 의한$ZnGa_{2}Se_{4}$단결정 박막 성장과 광전기적 특성)

  • 박창선;홍광준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

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The Analysis of Spectrum on the Barkhausen Noise of Hysteresis Loops on Neutron Irradiated Material

  • Sim, Cheul-Muu;Chang, Kee-Ok;Park, Kook-Nam;Cho, Man-Soon;Park, Chang-Oong
    • The Journal of the Acoustical Society of Korea
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    • v.18 no.1E
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    • pp.7-12
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    • 1999
  • In relation to a non-destructive evaluation of irradiation damages, the changes in the hysteresis loop and Barkhausen noise amplitude and the harmonics frequency due to a neutron irradiation were measured and evaluated. The Mn-Mo-Ni low alloy steel of RPV was irradiated to a neutron fluence of 2.3 ×10/sup 19/ n/㎠ (E ≥1 MeV) at 288℃. The saturation magnetization of neutron irradiated metal did not change. The neutron irradiation caused the coercivity to increase, whereas susceptibility to decrease. The amplitude of Barkhausen noise parameters associated with the domain wall motion were decreased by a neutron irradiation. The spectrum of Barkhausen noise is analysed with an applied frequency of 4 Hz and 8 Hz, sampling time of 50 μ sec and 20 μ sec. The harmonic frequency shows 4 Hz, 8 Hz, 12 Hz and 16 Hz reflected from an unirradiated specimen. On the contrary, the harmonic frequency disappeared on the irradiated specimen. In addition to the amplitude, the harmonic frequency of Barkhausen noise is taken into accounts as a promising tool for monitoring the irradiation induced degradation of the reactor materials such as a SA508 of PWR-RPV steel and a Zr₄ of HANARO-CNH.

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