• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.302-302
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• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2288-2292
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• 2007

The catalytic activities of nickel-based catalysts were estimated for oxidizing acetaldehyde of VOCs exhausted from industrial facilities. The catalysts were prepared by sol-gel methods of SiO2 and SiO2-TiO2 as a xerogel followed by impregnating Al2O3 powder with the nickel nitrate precursor. The crystalline structure and catalytic properties for the catalysts were investigated by use of BET surface area, X-ray diffraction (XRD), Xray photoelectron spectroscopy (XPS) and temperature programmed reduction (TPR) techniques. These results show that nickel oxide is transformed to NiAl2O4 spinel structure at the calcination temperature of 400 °C in response to the steps with after- and co-impregnation of Al2O3 powder in sol-gel process. The NiAl2O4 could suppress the oxidation reaction of acetaldehyde by catalysts. The NiO is better dispersed on SiO2-TiO2/Al2O3 support than SiO2/Al2O3 and SiO2-TiO2-Al2O3 supports. From the testing results of catalytic activities for oxidation of acetaldehyde, Catalysts showed a big difference in conversion efficiencies with the way of the preparation of catalysts and the loading weight of nickel. The catalyst of 8 wt.% Ni/TiO2-SiO2/Al2O3 showed the best conversion efficiency on acetaldehyde oxidation with 100% conversion efficiency at 350 °C.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.9
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• pp.82-88
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• 2001

In order to fulfil the requirements of the various performance profiles of ceramic cutting tools, six different SiC-based ceramics have been fabricated by hot-pressing (SiC--${Si}_3 {N}_4$composites) or by hot-pressing and subsequent annealing (monolithic SiC and SiC-TiC composites). Correlation between the annealing time and the corresponding microstructure and the mechanical properties of resulting ceramics have been investigated. The grain size of both ${Si}_3 {N}_4$and SiC in SiC-${Si}_3 {N}_4$composites increased with the annealing time. Monolithic SiC has the highest hardness, SiC-TiC composite the highest toughness, and the SiC-${Si}_3 {N}_4$composite the highest strength among the ceramics investigated. The hardness of SiC-${Si}_3 {N}_4$composites was relatively independent of the grain size, but dependent on the sintered density. The cutting performance of the newly developed SiC-based ceramic cutting tools will be described in Part 2 of this paper.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.245-249
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• 2006

In this study, ternary Ti-Mo-N and new quaternary Ti-Mo-Si-N coatings were synthesized on steel substrates(AISI D2) and Si wafers by a hybrid coating system of arc ion plating (AIP) using Ti target and d.c. magnetron sputtering technique using Mo and Si targets in $N_2/Ar$ gaseous mixture. Ternary Ti-Mo-N coatings were substitutional solid-solution of (Ti, Mo)N and showed maximum hardness of approximately 30 GPa at the Mo content of ${\sim}10$. %. The Ti-Mo-Si-N coating with the Si content of 8.8 at. % was a composite consisting of fine (Ti, Mo)N crystallites and amorphous $Si_3N_4$ phase. The hardness of the Ti-Mo-Si(8.8 at. %)-N coatings exhibited largely increased hardness value of ${\sim}48$ GPa due to the microstructural evolution to the fine composite microstructure and the refinement of (Ti, Mo)N crystallites. The average friction coefficient of the Ti-Mo-Si-N coatings largely decreased with increase of Si content. The microstructures of Ti-Mo-Si-N coatings were investigated with instrumental analyses of XRD, XPS, and HRTEM in this work.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.91-95
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• 2000

Powder mixtures of $\beta$-SiC-TiC in a weight ratio of 2:1 containing 5-20 wt% additives ($Al_2O_3$-$Y_2O_3$) were liquid-phase sintered at $1830^{\circ}C$ for 1h by hot-pressing and subsequently annealed at $1950^{\circ}C$ for 6h to enhance grain growth. The annealed specimens revealed a microstructure of \"in situ-toughened composite\" as a result of the $\beta$longrightarrow$\alpha$ phase transformation of SiC during annealing. The increase of the content of additives accelerated the growth of elongated $\alpha$-SiC grains with higher aspect ratio and improved fracture toughness. The fracture toughness of SiC-TiC composite containing 20 wt% additive was 6.2 MPa.$m^{1/2}$.2}$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.86-86
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• 1999

본 연구에서는 마이크로파 유전체 소자로서의 응용 및 절연 산화막으로의 응용을 위해 마이크로파 유전체 세라믹으로 사용되어 온 MgTiO3 물질을 펄스 레이저로 박막을 제조하였다. MgTiO3 는 주로 고주파에서 높은 유전율을 갖고 높은 품질계수 (22.000 at 5 GHz) 혹은 낮은 유전손실을 갖으며 유전특성의 온도 안정성이 우수하여 유전체 세라믹 재료로 응용된다. MgTiO3 박막의 성장은 KrF(파장:248nm) 엑시머 레이저를 이용했으며 공정조건으로 박막의 성장온도는 500-75$0^{\circ}C$, 산소 압력은 10-5-200mTorr, 성장 후 냉각시 산소분위기는 200Torr, 레이저 에너지 밀도는 1.5-5J/cm2 등의 조건으로 박막을 성장하였다. MgTiO3 박막을 여러 가지 기판, 즉 Al2O3(r-plane), Si, Pt 위에 성장시켰으며 기판에 따라 에픽텍셜 혹은 다결정 상태를 갖는 ilmenite 구조로 성장되었다. PLD(Pulsed laser deposition)법에 의해 형성된 MgTiO3 박막을 보면, 우선 Al2O3(r-plane) 기판위에 성장된 경우 $700^{\circ}C$에서 에픽텍셜하게 성장하였으며, Si 기판 위에 성장된 경우 $650^{\circ}C$에서부터 (003)면으로 우선 배향된 단일상의 ilmenite 구조가 형성된다. Ptdnl에 성장된 경우 $600^{\circ}C$에서부터 (003)면으로 우선배향성을 가지며 $650^{\circ}C$에서 결정의 안정화를 이루었으나, MgTiO3 박막은 전기적 특성으로 유전특성 및 유전분산 특성 등이 측정 분석되어 MgTiO3 박막의 고주파 유전체로의 응용에 관한 가능성을 토의하였다.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.301-307
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• 1997

Monodisperse, spherical $SiO_2/TiO_2$ composite fine powders were prepared by modified Sol-Gel process which $TiO_2$ fine Powders was used as a seed particles for condensation of TEOS (Tetraethyl Orthosilicate). The reaction was carried out under $N_2$ atmosphere at ambient temperature using $NH_3$ as a catalyst. Ethanol was used as a solvent. Drying process was carried out with vacuum trap which cooled by liquid $N_2$. The reaction variables were the concentration of TEOS, the concentration of ammonia, the size of $TiO_2$ seed and molar ratio of $SiO_2/TiO_2$. The optimum condition for the preparation of $SiO_2/TiO_2$ composite fine powders without agglomeration was [TEOS]=0.3M, [$NH_3$]=0.7M, size of $SiO_2/TiO_2$ seed = 200~300nm.