• Title/Summary/Keyword: $TiO_3$

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Microwave Dielectric Properties 0.9 MgTiO$_3$-0.1SrTiO$_3$ Ceramics with Sintering Temperature (소결온도에 따른 0.9 MgTiO$_3$-0.1SrTiO$_3$ 세라믹의 마이크로파 유전특성)

  • Choi, Eui-Sun;Lee, Moon-Kee;Park, In-Gil;Ryu, Ki-Won;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.282-285
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    • 1999
  • The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.

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Synthesis of $BaTi_4O_9, Ba_2Ti_9O_{20}$ and $BaTi_5O_{11}$ Compounds by Coprecipitation Method and Their Electrical and Thermal Properties (공침법에 의한 $BaTi_4O_9, Ba_2Ti_9O_{20}$$BaTi_5O_{11}$화합물의 합성 및 그의 전기적, 열적 특성)

  • 김종옥;손우창;전성용;이경희;이병하
    • Journal of the Korean Ceramic Society
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    • v.31 no.9
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    • pp.1005-1011
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    • 1994
  • The three different composition of BaTi4O9, Ba2Ti9O20 and BaTi5O11 were prepared by coprecipitation process, and then the dielectric properties of these compounds were measured at low microwave frequencies. The powder showing high level of purity was synthesised by the coprecipition reaction of BaCl2 and TiCl4 where (NH4)2CO3 and NH4OH were used as a deflocculent. Followings are the result of this study: 1. The sintering temperature increased with increasing TiO2 content. 2. BaTi4O9 powder were synthesized as a single phase by this processing technique, but the resultant Ba2Ti9O20 and BaTi5O11 phase existed with Ba2Ti9O20 and BaTi5O11 phases. 3. Single phase BaTi4O9 showed high dielectric constant value of 35, high Q value of 8100.

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The Study of Reaction Characteristics of V/W/TiO2 Catalyst Using Se-TiO2 Support On NH3-SCR Reaction (Se-TiO2 지지체를 이용한 V/W/TiO2 NH3-SCR 촉매의 반응 특성 연구)

  • Lee, Yeon Jin;Won, Jong Min;Ahn, Suk Hyun;Hong, Sung Chang
    • Applied Chemistry for Engineering
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    • v.32 no.6
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    • pp.599-606
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    • 2021
  • In this study, an experiment and a reaction characteristic study were conducted to enhance the reaction activity of V2O5/WO3/TiO2 at 300 ℃ or less by adding selenium to the support, in a selective catalytic reduction method using ammonia as a reducing agent to remove nitrogen oxides. Se-TiO2 and TiO2 were synthesized using the sol-gel method, and used as a support when preparing V2O5/WO3/TiO2 and V2O5/WO3/Se-TiO2 catalysts. The reaction activity of our catalyst was compared with that of a commercial catalyst. The denitration efficiency of the catalyst using TiO2 prepared by the sol-gel method was lower than that of the catalyst prepared using commercial TiO2, but was improved by the addition of selenium. Thus, the effect of selenium addition on the catalyst structure was analyzed using BET, XRD, Raman, H2-TPR, and FT-IR measurements and the effect of the increase in specific surface area by selenium addition and the formation of monomer and complex vanadium species on reaction characteristics were confirmed.

The interfacial properties of th eanneled SiO$_{2}$/TiW structure (열처리된 SiO$_{2}$/TiW 구조의 계면 특성)

  • 이재성;박형호;이정희;이용현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.3
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    • pp.117-125
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    • 1996
  • The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

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Low-temperature Sintering and Dielectric Properties of $CaZrO_3-CaTiO_3$ Ceramics for Middle- Permittivity LTCC Substrate (중유전율 LTCC 기판용 $CaZrO_3-CaTiO_3$계 세라믹스의 저온소결 및 유전특성)

  • Park Jeong-Hyun;Choi Young-Jin;Ko Won-Jun;Park Jae-Hwan;Park Jae-Gwan
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.3 s.32
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    • pp.17-22
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    • 2004
  • The microwave dielectric properties of $CaZrO_3$ ceramics with addition of $CaTiO_3$ were studied. The effect of glass addition on the low-temperature sintering and microwave dielectric properties of $CaZrO_3-CaTiO_3$ ceramics were also evaluated to develop the materials for functional substrates of low-temperature co-fired ceramics. When $10-20 wt\%$ of lithium borosilicate glass was added, the sintering temperature of the $CaZrO_3-CaTiO_3$ ceramics decreased from $1450^{\circ}C$ to below $900^{\circ}C$. As the $T_f$ of glass frits and $CaZrO_3$ are slightly negative and that of $CaTiO_3$ is significantly positive, zero $T_f$ could be realized by mixing an appropriate amount of $CaTiO_3$ with $CaZrO_3$. The $CaZrO_3-CaTiO_3$ ceramics sintered at $875^{\circ}C$ with $15wt\%$ glass frits showed the relative density of $98\%$, permittivity of 23, quality factor of 2500 GHz, and temperature coefficient of resonant frequency of $ -3 ppm/^{\circ}C$.

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Synthesis of CoTiOx and Its Catalytic Activity in Continuous Wet TCE Oxidation (CoTiOx의 합성 및 연속 습식 TCE 산화반응에서의 촉매활성)

  • Kim, Moon-Hyeon
    • Journal of Environmental Science International
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    • v.16 no.12
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    • pp.1431-1437
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    • 2007
  • Cobalt titanates($CoTiO_x$), such as $CoTiO_3$ and $Co_2TiO_4$, have been synthesized via a solid-state reaction and characterized using X-ray diffraction(XRD) and X-ray photoelectron spectroscopic(XPS) measurement techniques, prior to being used for continuous wet trichloroethylene(TCE) oxidation at $36^{\circ}C$, to support our earlier chemical structure model for Co species in 5 wt% $CoO_x/TiO_2$(fresh) and(spent) catalysts. Each XRD pattern for the synthesized $CoTiO_3$ and $Co_2TiO_4$ was very close to those obtained from the respective standard XRD data files. The two $CoTiO_x$ samples gave Co 2p XPS spectra consisting of very strong main peaks for Co $2p_{3/2}$ and $2p_{1/2}$ with corresponding satellite structures at higher binding energies. The Co $2p_{3/2}$ main structure appeared at 781.3 eV for the $CoTiO_3$, and it was indicated at 781.1 eV with the $Co_2TiO_4$. Not only could these binding energy values be very similar to that exhibited for the 5 wt% $CoO_x/TiO_2$(fresh), but the spin-orbit splitting(${\Delta}E$) had also no noticeable difference between the cobalt titanates and a sample of the fresh catalyst. Neither of all the $CoTiO_x$ samples were active for the wet TCE oxidation, as expected, but a sample of pure $Co_3O_4$ had a good activity for this reaction. The earlier proposed model for the surface $CoO_x$ species existing with the fresh and spent catalysts is very consistent with the XPS characterization and activity measurements for the cobalt titanates.

α-case Interfacial Reaction Behavior of Al2O3 Mold Containing Interstitial and Substitutional Compounds for Titanium Investment Casting (침입형 및 치환형 화합물을 함유한 Ti 정밀주조용 Al2O3 주형의 α-case 계면반응 거동)

  • Choi, Bong-Jae;Lee, Seul;Kim, Young-Jig
    • Korean Journal of Metals and Materials
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    • v.49 no.7
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    • pp.577-582
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    • 2011
  • The newly developed ${\alpha}-case$ controlled mold material for Ti investment castings was suggested in this research. The $Al_2O_3$ mold containing interstitial $TiO_2$ and substitutional $Ti_3Al$ was manufactured by the reaction between $Al_2O_3$ and Ti. It is obvious that as the $TiO_2$ and $Ti_3Al$ content in the mold surface were increased, the depth of the interfacial reaction was significantly reduced. In addition, substitutional $Ti_5Si_3$ in the mold surface owing to the reaction between Ti and $SiO_2$ from the binder was effective for ${\alpha}-case$ reduction. Therefore, the ${\alpha}-case$ reduction was accomplished by the diffusion barrier effect of interstitial $TiO_2$, substitutional $Ti_3Al$ and $Ti_5Si_3$.

The effect of g1ass frit arid BaWO$_4$ Addition Microwave Dielectric Prperties of BaTiO$_3$-3TiO$_2$ Ceramics (Glass 첨가 및 BaWO$_4$ 첨가에 따른 BaTiO$_3$-3TiO$_2$ 세라믹스의 고주파 유전 특성)

  • 윤중락;김지균;이헌용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.335-338
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    • 1998
  • The effect of glass flit addition on microwave dielectric properties of BaTiO$_3$-3TiO$_2$ ceramic was studied. Addition of glass frit to this system obtained sintered sample below sintering temperature 105$0^{\circ}C$. At BaTiO$_3$-3TiO$_2$+ g1ass frit 3wt% + BaWO$_4$6 wt%m, this ceramic showed excellent microwave properties of dielectric constant 34, Q$\times$f 8,100, temperature coefficient of resonant frequency 4 ppm/$^{\circ}C$ .

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Preparation and Luminescent Properties of (Sr1Ca)TiO3:Pr1Al Phosphors ((Sr1Ca)TiO3:Pr1Al 형광체의 제조와 발광특성)

  • Park Chang-Sub;Lee Jeng-Un;Yu Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.5
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    • pp.422-426
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    • 2006
  • [ $Sr_xCa_{(1-x)}TiO_3$ ] red phosphors doped with Pr(0.13 mol%) and Al(0.23 mol%) were synthesized by solid state reaction method. Change of crystal structure occurred in $Sr_xCa_{(1-x)}TiO_3:Pr,Al$ phosphors with increasing value of x. Green and red luminescence were observed from $SrTiO_3:Pr,Al$ phosphors at low temperature. However, only red luminescence in the case of $CaTiO_3:Pr,Al$ phosphors was measured at low temperature. The main cause of green luminescence was explained by the bandgap reduction.