• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1535-1537
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• 2003

Manganese oxide electrode was designed to improve electrical conductivity for dimensionally stable anode(DSA) using discreet variation (DV)-X${\alpha}$ method. It was calculated in DV-X${\alpha}$ method that the addition of nickel to manganese oxide reduce the energy band gap of manganese oxide electrode. Therefore, it is estimated that nickel in 3 additive elements of Ti, Ni and Sn is the best candidate to improve the electrical conductivity of manganese oxide. The anodically deposited manganese oxide which was produced in 0.2M $MnSO_4$ and 0.2M (Mn,Ni)$SO_4$ solution had $MnSO_4$ structure which was identified by XRD. The $MnSO_4$ films produced in both solutions over than 50mA/$cm^2$ of current density and long deposition time of 600sec showed low adhesion with Ti substrate.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.59-63
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• 2007

This paper presented a low-cost thick film gas sensor module, which was based on simple PCB (Printed Circuit Board) process. The proposed sensor module included a $NO_2/H_2$ gas sensor, a relative humidity sensor, and a heating element. The $NO_2/H_2$ gas and relative humidity sensors were realized by screen-printing $SnO_2,\;BaTiO_3$ nano-powders on IDTS (Interdigital Transducer) of a PCB substrate, respectively. At first 1% $H_2$ gas flowed into the sensor chamber. After 4 min, air filled the chamber while $H_2$ gas flow stopped. This experiment was performed repeatedly. The Identical procedure was used for the $NO_2$ detection. The result for sensing $H_2$ gas showed the increase of voltage from 0.8V to 3.5V due to the conductance increase and its reaction response time by hydrogen flow was 65 sec. $NO_2$ sensing results showed 2.7 V voltage drop due to the conductance decrease and its response time was 3 sec through a voltage monitoring.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.54.1-54.1
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• 2010

산화물 기반의 TFT는 유리, 금속, 플라스틱 등 기판 종류에 상관없이 균일한 제작이 가능하며, 상온 및 저온에서 대면적으로 제작이 가능하고, 저렴한 비용으로 제작 가능하다는 장점 때문에 최근 많은 연구가 이루어지고 있다. 현재 TFT 물질로 많이 연구되고 있는 산화물은 ZnO (3.4 eV)나 InOx (3.6 eV), GaOx (4.9 eV), SnOx(3.7 eV)등의 물질과 각각의 조합으로 구성된 재료들이 주로 사용되고 있으며, 가장 많은 연구가 이루어진 ZnO 기반의 TFT는 mobility와 switching 속도에서 우수한 특성을 보이나, 트렌지스터의 안정성이 떨어지는 것으로 보고 되고 있다. 그러나 IGZO 물질의 경우 결정학적으로 비정질이며 상온 및 저온에서 대면적으로 제작이 가능하고, 높은 전자 이동도의 특성을 가지고 있는 장점 때문에 최근 차세대 산화물 트렌지스터로 각광받고 있다. IGZO TFT 소자의 경우 Ag, Au, In, Pt, Ti, ITO 등 다양한 전극 물질이 사용되고 있는데, 이들 중 active channel과 ohmic contact을 이루는 Al, Ti, Ag의 적용을 통해 향상된 성능을 얻을 수 있다. 하지만 이들 전극 재료는 TFT 소자 제작시 필수적인 열처리 공정에 노출되면서 active channel 과 전극 사이 계면에 문제점을 야기할 수 있다. 특히, Ti의 경우 산화가 잘되기 때문에 전극계면에 TiO2를 형성하여 contact resistance의 큰 영향을 미치는 것으로 보고 되고 있다. 본 연구에서는 ohmic 전극재료인 Ti 또는 Ti/Au를 적용하여 TFT 소자 제작 및 특성에 대한 평가를 진행했으며, 열처리에 따른 전극과 IGZO 계면 사이의 미세구조와 전기적인 특성간의 상관관계를 연구하였다. 이를 통해, 소자 제작 공정을 최적화하고 신뢰성 있는 소자 특성을 얻을 수 있었다.

• Journal of Hydrogen and New Energy
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• v.18 no.3
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• pp.230-237
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• 2007

Titania nanotube(TiNT) and CdS sol were synthesized by hydrothermal reaction under strongly basic condition and by precipitation reaction of $Cd(N0_3)_2$ and $Na_2S$ aqueous solutions, respectively. After preparing a series of CdS-TiNT composite films on $F:SnO_2$ conducting glass with variation of the mole ratio (r) of TiNT/(CdS+TiNT), their visible light absorption, photocatalytic activities for hydrogen production, and the photocurrent generation were examined. In general, this CdS-TiNT series showed lower photocatalytic activities and photocurrent generation under Xe light irradiation compared to their counterparts, i.e., CdS-$TiO_2$ particulate series. It appeared that TiNTs are not so effective photocatalyic material in spite of their larger specific surface areas compared to $TiO_2$ nanoparticles, because they indicate a poor crystallinity and less intimate interaction or contact with CdS particles owing to the tubular morphology and an easy agglomeration among themselves.

• Rubber Technology
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• v.13 no.1
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• pp.1-9
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• 2012

Click chemistry had enjoyed a wealthy decade after it was introduced by K.B.Sharpless and his co-worker on 2001. Since there is no optimized method for synthesis of click polymer, therefore, this paper introduced three click reaction methods such as catalyst, non-catalyst and azide-end capping for fluorene-based functional click polymers. The obtained polymers have reasonable molecular weight with narrow PDI. The polymers are thermally stable and almost emitted blue light emission. The synthesized fluorene-based functional click polymers were characterized to compare the effect of click reaction methods on polymer electro-optical properties as well as device performance on quasi-solid-state dye sensitized solar cells (DSSCs) applications. The DSSCs with configuration of $SnO_2:F/TiO_2/N719$ dye/quasi-solid-state electrolyte/Pt devices were fabricated using these click polymers as a solid-state electrolyte components. Among the devices, the catalyzed click polymer composed device exhibited a high power conversion efficiency of 4.62% under AM 1.5G illumination ($100mW/cm^2$).These click polymers are promising materials in device application and $Cu^I$-catalyst 1, 3-dipolar cycloaddition click reaction is an efficient synthetic methodology.

• Polymer(Korea)
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• v.25 no.1
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• pp.98-107
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• 2001

Dielectric properties and shape memory characteristics of SBS composites filled with carbon black as conductive filler and (Ba,Ca)$(Sn,Ti)O_3$ or $SrTiO_3$ as dielectrics were investigated for the development of phantom model. SBS/carbon black composite showed an increment of complex dielectric constant with increasing the content of carbon black and the frequency dependence that the dielectric constant decreases with the frequency. The complex dielectric constant and the conductivity of SBS/carbon black/dielectrics composites increased with the increase of dielectrics and the characteristics of the frequency dependence also occurred by the effect of carbon black. Phantom materials with the dielectric properties and the conductivity corresponding to human tissues for the measurement of specific absorption rate(SAR) within the frequency range of current mobile phones(775MHz~2GHz) could be developed by adjusting the composition ratios of carbon black, dielectrics and SBS and by controlling the characteristic of frequency dependence of composite. From thermomechanical cycling test good shape recoverability could be obtained in SBS composite even though the residual strain was increased by the effect of filler.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.191-193
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• 2005

This study has investigated the effects of the etching method of a Ti substrate for a metal oxide electrode on the electrochemical characteristics of the electrode. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the catalytic oxide electrode, which is known to be so effective to destruct refractory organics in aqueous waste, were studied. A method to enhance the fabrication reproducibility of the oxide electrode was tested for Ru, Zr, Sn oxide on the Ti substrate using SEM, XRD, Cyclic voltammetry.

• Journal of Powder Materials
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• v.9 no.6
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• pp.394-408
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• 2002

Nanostructured high strength metastable Al-, Mg- and Ti-based alloys containing different amorphous, quasicrystalline and nanocrystalline phases are synthesized by non-equilibrium processing techniques. Such alloys can be prepared by quenching from the melt or by powder metallurgy techniques. This paper focuses on one hand on mechanically alloyed and ball milled powders containing different volume fractions of amorphous or nano-(quasi)crystalline phases, consolidated bulk specimens and, on the other hand. on cast specimens containing different constituent phases with different length-scale. As one example. $Mg_{55}Y_{15}Cu_{30}$- based metallic glass matrix composites are produced by mechanical alloying of elemental powder mixtures containing up to 30 vol.% $Y_2O_3$ particles. The comparison with the particle-free metallic glass reveals that the nanosized second phase oxide particles do not significantly affect the glass-forming ability upon mechanical alloying despite some limited particle dissolution. A supercooled liquid region with an extension of about 50 K can be maintained in the presence of the oxides. The distinct viscosity decrease in the supercooled liquid regime allows to consolidate the powders into bulk samples by uniaxial hot pressing. The $Y_2O_3$ additions increase the mechanical strength of the composites compared to the $Mg_{55}Y_{15}Cu_{30}$ metallic glass. The second example deals with Al-Mn-Ce and Al-Cu-Fe composites with quasicrystalline particles as reinforcements, which are prepared by quenching from the melt and by powder metallurgy. $Al_{98-x}Mn_xCe_2$ (x =5,6,7) melt-spun ribbons containing a major quasicrystalline phase coexisting with an Al-matrix on a nanometer scale are pulverized by ball milling. The powders are consolidated by hot extrusion. Grain growth during consolidation causes the formation of a micrometer-scale microstructure. Mechanical alloying of $Al_{63}Cu_{25}Fe_{12}$ leads to single-phase quasicrystalline powders. which are blended with different volume fractions of pure Al-powder and hot extruded forming $Al_{100-x}$$(Al_{0.63}Cu_{0.25}Fe_{0.12})_x$ (x = 40,50,60,80) micrometer-scale composites. Compression test data reveal a high yield strength of ${\sigma}_y{\geq}$700 MPa and a ductility of ${\varepsilon}_{pl}{\geq}$5% for than the Al-Mn-Ce bulk samples. The strength level of the Al-Cu-Fe alloys is ${\sigma}_y{\leq}$550 MPa significantly lower. By the addition of different amounts of aluminum, the mechanical properties can be tuned to a wide range. Finally, a bulk metallic glass-forming Ti-Cu-Ni-Sn alloy with in situ formed composite microstructure prepared by both centrifugal and injection casting presents more than 6% plastic strain under compressive stress at room temperature. The in situ formed composite contains dendritic hcp Ti solid solution precipitates and a few $Ti_3Sn,\;{\beta}$-(Cu, Sn) grains dispersed in a glassy matrix. The composite micro- structure can avoid the development of the highly localized shear bands typical for the room temperature defor-mation of monolithic glasses. Instead, widely developed shear bands with evident protuberance are observed. resulting in significant yielding and homogeneous plastic deformation over the entire sample.

• Journal of Surface Science and Engineering
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• v.24 no.1
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• pp.25-30
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• 1991

The evaporation characteristics of Ag, Al, Au, Cr. Cu, In, Mg, Mn, Pb, Pd, Si, SiO, Sn, Ti and Zn with the various resistive heating sources have been studied. The employed sources are refractory metal (Mo, Ta and W) boats, W-wire, ceramic (usually Al2O3)-coated and -barriered refractory metal boats, and special boats such as baffled boats and intermetallic boats (nitride compound and graphite). We investigated the melting mode, evaporation rate at a specific power, and lifetime of the sources. A special boat holder is also discussed which is needed to cool the sources at a large heat capacity.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.49-53
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• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.