• Journal of Environmental Science International
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• v.11 no.7
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• pp.757-763
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• 2002

The objective of this study is to delineate removal efficiency of the Linear alkylbenzene sulfonates(LAS) in solution by $TiO_2$ photocatalytic oxidation as a function of the following different experimental conditions : initial concentration of LAS, $TiO_2$ concentration, UV wavelength and pH of the solution. It was increased with decreasing initial concentration of LAS and with decreasing pH of the solution. Removal efficiency increased with increasing $TiO_2$ concentration but was almost the same at $TiO_2$ concentration of 2 g/L and 3 g/L, i.e., for initial LAS concentration of 50 mg/L. It was removal efficiency was 85% at 150 min in the case of $TiO_2$ concentration of 0.5 g/L but 100% after 150 min in the case of $TiO_2$ concentration of 1 g/L, 100% after 110 min in the case of $TiO_2$ concentration of 2 g/L and 3 g/L. UV wavelength affection on the removal efficiency of LAS decreased in the order of 254, 312 and 365 nm as increasing wavelength. But the removal efficiency of LAS was nearly the same at UV wavelength of 254 nm and 312 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.385-385
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• 2010

In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• Journal of information and communication convergence engineering
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• v.16 no.4
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.1-6
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• 2017

Functional coatings, such as anti-reflection and self-cleaning, are frequently applied to cover glass for photovoltaic applications. Anti-reflection coatings made of mesoporous silica film have been shown to enhance the light transmittance. $TiO_2$ photocatalyst films are often applied as a self-cleaning coating. In this study, transparent hydrophobic anti-reflective and self-cleaning coatings made of $SiO_2/TiO_2$ thin layers were fabricated on a slide glass substrate by the sol-gel and dip-coating processes. The morphology of the functional coatings was characterized by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The optical properties of the functional coatings were investigated using an UV-visible spectrophotometer. Contact angle measurements were performed to confirm the hydrophobicity of the surface. The results showed that the $TiO_2$ films exhibit a high transmittance comparable to that of the bare slide glass substrate. The $TiO_2$ nanoparticles make the film more reflective and lead to a lower transmittance. However, the transmittance of the $SiO_2/TiO_2$ thin layers is 93.5% at 550 nm with a contact angle of $110^{\circ}$, which is higher than that of the bare slide glass (2.0%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1267-1275
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• 1996

Green sheet was prepared by tape casting in the composition of (1-x)Pb(Mg1/3Nb2/3)O3-PbTiO3 system using Pb(Mg1/3Nb2/3)O3 and PbTiO3 synthesized with PbO, Nb2O5 MgO and TiO2 The densest green sheet was obtained in the weight ratio 70:30 of powder to binder. Green sheet wasmultilayered in metal mould and formed into lamination at 7$0^{\circ}C$, 300kg/cm2 The lamination was sintered at 110$0^{\circ}C$ 2hr, Dielectric constant and Curie temperature of disc type sintered body was highered with increasing the amount of PbTiO3 and was in the range of 19000-21000, -7~45$^{\circ}C$ respectively. Green and sintered relative density of lamination was 61% and 95% respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.110.1-110.1
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• 2007

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.110-115
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• 2009

Polystyrene (PS) microspheres were used to good advantage as a template material to prepare macroporous $TiO_2$ thin films. This is enabled to run the thermal decomposition of the PS without the collapsing of the 3-D macroporous framework during the calcination step. $TiO_2$ thin films were deposited onto the colloidal templated substrates at room temperature by RF sputtering, and then samples were thermally treated at $450^{\circ}C$ for 40.min in air to remove the organic colloidal template and induce crystallization of the $TiO_2$ film. The macroporous $TiO_2$ thin film exhibited a quasi-ordered partially hexagonal close-packed structure. Burst holes, estimated to be formed during PS thermal decomposition, are seen as the hemisphere walls. the inner as well as the outer surfaces of the hollow hemispheres formed by the method of thermal decomposition can be easily accessed by the diffusing gas species. As a consequence, the active surface area interacting with the gas species is expected to be enlarged about by a factor of fourth as large as compared to that of a planar films. Also the thickness at neighboring hemisphere could be controlled a few nm thickness. If the acceptor density becomes as large that depletion width reaches those thickness, the device is in the pinch off-situation and a strong resistance change should be observed.