• Title/Summary/Keyword: $TiO_{2-x}$

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Microwave dielectric properties of $CaTiO_3-LaAIO_3$ ceramics ($CaTiO_3-LaAIO_3$계 세라믹스의 마이크로파 유전특성)

  • 여동훈;김현재;송준태
    • Electrical & Electronic Materials
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    • v.9 no.4
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    • pp.379-384
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    • 1996
  • The microwave dielectric properties of (I-x)CaTiO$_{3}$-xLaAIO$_{3}$ were investigated. The solid solution of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ had the perovskite structure in the range of all compositions. The crystal system of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ was transformed to orthorhombic(x.leq.0.4), psudo-cubic(x=0.5), and rhombohedral (x.geq.0.7) in turn, as the amount of LaAIO$_{3}$ increased. The dielectric constant and temperature coefficient of resonant frequency of solid solution were decreased with the content of LaAIO$_{3}$, whereas, the value of Q . f$_{o}$ was increased. The microwave dielectric material having Q . f$_{o}$ = 32, 500, .epsilon.$_{r}$ = 42, and .tau.$_{f}$ = 5 ppm/.deg. C was obtained from the 0.35CaTiO$_{3}$-0.65LaAIO$_{3}$ composition sintered at 1600.deg. C for 4hrs.hrs.hrs.

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Electrode Properties of Li-ion Batteries using $TiO_2$-based Composite Nanowires ($TiO_2$기반 복합 나노선을 이용한 리튬이온 배터리의 전극 특성 연구)

  • An, Geon-Hyoung;Ahn, Hyo-Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.3
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    • pp.19-24
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    • 2011
  • we successfully synthesized $TiO_2$-Ag composite nanowires via an electrospinning method and investigated the relationship between their electrochemical properties and structures by means of field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and cycler. It is shown that the $TiO_2$-Ag composite nanowires exhibit superior electrochemical properties when compared to the single $TiO_2$ nanowires and $TiO_2$ nanoparticles (P25, Degussa). Therefore, the results indicate that the introduction of Ag nanophases within the electrospun $TiO_2$ nanowires could be improved the capacitance and cycleability of electrodes in Li-ion batteries.

Magnetic Ordering in (1-x)BaTiO3-xLaFeO3 Solid Solutions

  • Rajagukguk, R.;Shin, D.G.;Lee, B.W.
    • Journal of Magnetics
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    • v.16 no.2
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    • pp.101-103
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    • 2011
  • Solid solutions between $BaTiO_3$ and $LaFeO_3$ have been prepared through a solid state reaction method. The X-ray diffraction results reveal that $Ba_{1-x}La_xTi_{1-x}Fe_xO_3$ ($0.1\;{\leq}\;x\;{\leq}\;0.7$) compounds have a cubic structure, whereas the parent material $BaTiO_3$ has a tetragonal structure. The magnetization measurements indicate that the materials have a magnetic ordering at room temperature and the magnetic properties of the solid solutions depending on the doping amount of $LaFeO_3$. The origin of magnetic behaviors is believed to be from $Fe^{3+}$ ions.

Structural and Electrical Properties High Resistance of TiNxOy/TiNx Multi-layer Thin Film Resistors (TiNxOy/TiNx 다층 박막을 이용한 고저항 박막 저항체의 구조 및 전기적 특성평가)

  • Park, Kyoung-Woo;Hur, Sung-Gi;Nguyen, Duy Cuong;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Korean Journal of Metals and Materials
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    • v.47 no.9
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    • pp.591-596
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    • 2009
  • $TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

Photocatalytic Degradation of Organic Compounds over $xTiO_2$-$ySiO_2$ Powders Prepared by Sol-Gel Method (졸-겔법으로 제조된 $xTiO_2$-$ySiO_2$ 분말에 의한 유기물의 광분해)

  • Yang, Chun-Hoe;Lee, Bong-Cheol
    • Journal of the Korean Applied Science and Technology
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    • v.25 no.2
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    • pp.130-136
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    • 2008
  • $xTiO_2$-$ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area were measured. Considering the efficiency of the ethanol and phenol degradation using the catalyst, the conclusions were obtained as follows: By means of X-ray analysis of $xTiO_2$-$ySiO_2$ powder that is obtained from Titanium and Silicon alkoxide by sol-gel process, it is shown that crystal structure of anatase type is a dominating structure and, on the other hand, the structure of rutile also partly exists. The increase of $SiO_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. It is shown that more than 90% of ethanol and phenol are degraded when reaction time is about three and an hours, and the maximum degradation rate of ethanol and phenol is shown in $60TiO_2$-$40SiO_2$ catalyst.

Effect of $CaTiO_3$Additions on the Microwave Dielectric Properties of $Mg_2$$SiO_4$-$ZnAl_2$$O_4$Ceramics with Low Dielectric Constant (저유전율을 갖는 $Mg_2$$SiO_4$-$ZnAl_2$$O_4$계 세라믹스의 $CaTiO_3$첨가에 따른 고주파 유전특성)

  • 박일환;김현학;김경용;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.12
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    • pp.1017-1024
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    • 2000
  • Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

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Improvement in the negative bias stability on the water vapor permeation barriers on Hf doped $SnO_x$ thin film transistors

  • Han, Dong-Seok;Mun, Dae-Yong;Park, Jae-Hyeong;Gang, Yu-Jin;Yun, Don-Gyu;Sin, So-Ra;Park, Jong-Wan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.110.1-110.1
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    • 2012
  • Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

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Microwave Dielectric Properties of $\textrm{BaCo}_{x}\textrm{Ti}_{x}\textrm{Fe}_{12-2x}\textrm{O}_{19}$($1.0\leq\textrm{x}\leq5.0$) Materials ($\textrm{BaCo}_{x}\textrm{Ti}_{x}\textrm{Fe}_{12-2x}\textrm{O}_{19}$($1.0\leq\textrm{x}\leq5.0$)재료의 Microwave 유전특성)

  • Kim, Chan-Uk;Jo, Nam-Ung
    • Korean Journal of Materials Research
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    • v.8 no.8
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    • pp.775-779
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    • 1998
  • The resonant frequency fo and unloaded quality factor Qu of CoTi-substituted Barium ferrites($\textrm{BaCo}_{x}\textrm{Ti}_{x}\textrm{Fe}_{12-2x}\textrm{O}_{19}$, $1.0\leq\textrm{x}\leq5.0$) were measured at frequencies between 5 to 10GHz using the paralleled copper-plate wave guide method. The measurements showed that the permittivities of CoTi-substituted Barium ferrites(CoTi-BF) increased from 14.7 to 23.4 with the contents of CoTi, x, and the loss tangents had values of $\textrm{10}^{-3}$ order. From these results, CoTi-BF are considered to be very promising materials in microwave devices such as dielctric resonator antennas.

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A Study on Synthesis of $Ba_2Ti_9O_{20}$ by Coprecipitation Process and the Effect of $ZrO_2$ Addition (공침법에 의한 $Ba_2Ti_9O_{20}$ 합성과 $ZrO_2$ 첨가효과에 관한 연구)

  • 이병하;이경희;이헌식;전성용
    • Journal of the Korean Ceramic Society
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    • v.30 no.12
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    • pp.1023-1028
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    • 1993
  • To obtain a single phase of Ba2Ti9O20 at lower temperature than previious other researches. We investigated the effect of Zr substitution for predetermined portions of Ti in Ba2Ti9O20. In this study, the four compounds(x=0, 0.028, 0.048, 0.068) of Ba2(Ti1-xZrx)9O20 were prepared by coprecipitation reaction of BaCl2, TiCl4 and ZrOCl2 with (NH4)2CO3 and NH4OH as the coprecipitating agents and pH regulators, in queous solution. Owing to 4.8 mol% addition, the single phase of Ba2Ti9O20 showing high Q was obtained at 115$0^{\circ}C$ which is lower by 25$0^{\circ}C$ than the temperature in case of mechanical mixtures of BaCO3 and TiO2.

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Microwave Dielectric Properties of BaO-$(Nd,\;Bi)_2O_3-Tio_2$ Ceramic for Microwave Resonators (고주파 공진기용 BaO-$(Nd,\;Bi)_2O_3-Tio_2$계 세라믹스의 마이크로파 유전특성)

  • Yoon, Jung-Rag;Lee, Heun-Yong
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.320-323
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    • 1997
  • The microwave dielectric properties of X Ba0-$0.15(Nd_{0.87}Bi_{0.13})_2O_3$-(0.85-X) $TiO_2$ ($X=0.13{\sim}0.17$) and 0.16Ba0-$0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ ($X=0.10{\sim}0.16$) ceramics were investigated. Dielectric constant, quality factor and temperature coefficient of resonant frequency of 0.16Ba0-$0.15(Nd_{0.87}Bi_{0.13})_2O_3-0.69TiO_2$ ceramics sintered at $1320^{\circ}C$ for 2 hours were 89.2, 1920(at 4GHz) and 5.2ppm/$^{\circ}C$, respectively.

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