• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.222.2-222
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• 2003

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.146-152
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• 2011

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.50-59
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• 1992

By means of X-ray photoelectron spectroscopy(XPS), the initial stages of the oxidation of the cleaved CdTe (110) surface and the sputtered CdTe surface with oxygen exposure are invetigated. From the analyses of the spectra of Te 3dsn, Cd 3d5/2, 0 ls and Cd MNN Auger lines, it is shown that two oxygen atoms bond to one Te atom at the initial stages.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.235-240
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• 2008

This paper presents results and observations obtained from a study of the optical and thermal properties of alkali tellurite depending on the composition. Fourier transform infrared (FT-IR) spectra showed evidence of chemical modification from $TeO_4$ trigonal bipyramids (tbp) to $TeO_3$ trigonal pyramids (tp) in tellurite glasses. The optical band gaps of the different glass samples calculated using Tauc's method were found to range from 3.5-3.8 eV. The glass transition temperature (Tg) and glass stability (${\Delta}T$) of alkali tellurite glasses were investigated, as $M_2O$ [M: Li, Na, K] amounted to 25 mol%, through the use of differential thermal analysis (DTA). The coefficient of thermal expansion (CTE) was measured in a thermo mechanical analysis (TMA) with a slow heating rate after the glass samples were annealed. The results confirm that the optical band gap of alkali tellurite glasses depends on the Te-O-Te structural relaxation related to the ratio of bridging/non bridging oxygen (BO/NBO). In contrast, the thermal properties are related to the ionic field strength of the Te-O-M and M-O-M bonds, and the Te-O-Te breakage depends on the ratio of BO/NBO.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.9
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• pp.121-127
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• 1995

We have analyzed the double insulating layer consisting of anodic oxide and ZnS through TEM experiments. The use of double insulating layer for HgCdTe surface passivation is one of the promising passivation method which has been recently studied deeply and the double insulating layer is formed by the evaporation of ZnS on the top of anodic oxide layer grown in H$_{2}$O$_{2}$ electrolyte. The structure of anodic oxide layer on HgCdTe is amorphous but the structure of oxide layer after the evaporation of ZnS has been changed to micro-crystalline. The interface layer of 150.angs. thickness has been found between ZnS and anodic oxide layer and is estimated to be ZnO layer. The results of analysis on the chemical components of ZnS, the interface layer and anodic oxide layer have showed that Zn has diffused into the anodic oxide layer deeply while Hg has been significantly decreased from HgCdTe bulk to the top of oxide layer. The formation of ZnO interface layer and the change of structure of anodic oxide layer after the evaporation of ZnS are estimated to be defects or to induce the defects which might possibly affect the increase of the positive fixed charges shown in C-V measurements of HgCdTe MIS.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.111-111
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• 2003

반도체 나노결정은 양자구속효과(quantum confinement effect)에 의한 광학적인 특성을 갖기 때문에 광전자공학(optoelectronic), 광전지(photovoltaic)분야에 응용하려는 연구가 활발히 진행되고 있다. 본 연구에서는 고순도의 CdTe 나노결정을 1-thioglycerol 표면 완화제(surface stabilizer)로 사용하여 수용액 상태로 합성하였다. 모든 실험은 $N_2$ 분위기의 삼각플라스크에서 실험하였다. Cadmium 소오스로는 Cd(CIO$_4$)$_2$.6$H_2O$(Cadmium perchlorate hydrate-Aldrich)를 사용하였고 Tellurium 소오스로는 A1$_2$Te$_3$(Aluminum telluride-CERAC)와 H$_2$SO$_4$가 반응하여 H$_2$Te gas가 주입되도록 하였다. 합성된 CdTe 나노결정은 core-shell 형태로 존재하며 결정크기에 따른 특성분석을 위해서 High Resolution Transmission Electron Microscope (HRTEM), Photoluminescence spectroscopy, X-ray diffraction(XRD), UV-vis absorption spectra 분석을 하였다 또한 CdTe 나노결정을 나노와이어로 제작하여 CdTe 나노결정을 이용한 태양전지 제작에 응용하고자 한다.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.103-107
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• 2015

The effective glass frit composition used to absorb laser energy and to seal commercial dye-sensitized solar cell panel substrates has been previously developed using $V_2O_5-TeO_2$-based glass with 10 wt% ${\beta}$-eucryptite as a CTE controlling filler. The optimum sealing conditions are provided using a 3 mm beam, a laser power of 40 watt, a scan speed of 300 mm/s, and 200 irradiation cycles. In this study, the feasibility of the developed glass frit is investigated in terms of the sealing strength and chemical durability against the commercial iodide/triiodide electrolyte solution and fluorine-doped tin oxide (FTO) electrode in order to increase the solar cell lifetime. The sealing strength of the laser-sealed $V_2O_5-TeO_2$-based glass frit is $20.5{\pm}1.7MPa$, which is higher than those of thermally sealed glass frit and other reported glass frit. Furthermore, the developed glass frit is chemically stable against electrolyte solutions. The glass frit constituents are not leached out from the glass after soaking in the electrolyte solution for up to three months. During the laser sealing, the glass frit does not react with the FTO electrode; thus, the resistivity of the FTO electrode beneath the laser-sealed area remains the same.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.617-622
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• 2008

In this study, the additivity factors of compositions to density and glass transition point ($T_g$) in a $xLi_2O-(1-x)[(1-y)TeO_2-yZnO]$ (0$T_g$ was discussed. As a method for predicting the relation between glass structure and ionic conductivity, density was measured by the Archimedes method. The glass transition point was analyzed to predict the relation between ionic conductivity and the bonding energy between alkali ions and non-bridge oxygen (NBO). The relation equations showing the additivity factor of each composition to the two properties are as follows: Density(g/$cm^3$) = $2.441x_1\;＋\;5.559x_2\;＋\;4.863x_3\;T_g(^{\circ}C)$ = $319x_1\;＋\;247x_2\;＋\;609x_3\;－\;1950x_1x_3$ ($x_1$ : fraction of $Li_2O$, $x_2$ : fraction of $TeO_2$, $x_3$ : fraction of ZnO) The density decreased as $Li_2O$ content increased. This was attributed to change of the $TeO_2$ structure. From this structural result, the electric conductivity of the glass samples was predicted following the ionic conduction mechanism. Finally, it is expected that electric conductivity will increase as the activation energy for ion movement decreases.

• Korean Journal of Optics and Photonics
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• v.12 no.5
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• pp.394-400
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• 2001

We studied thermal diffusion properties diffusion properties of multi-layered Ge-Sb-Te alloy thin films for optical recording media by solving the thermal equation. Based on the numerical analysis of optical energy distribution and absorption inside multi-layered films including temperature gradient and heat transfer simultaneously, we proposed the optimum parameters of the input laser power and the multi-layer structure as follow. i) Input laser power is 18 mW, ii) laser exposure time is 60 ns, iii) the thicknesses of the lower and the upper ZnS-SiO$_2$are 140 nm and 20~30 nm respectively, and iv) thickness of Ge-Sb-Te recording film is 20 nm.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.200-202
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• 1987

Sintered CdS films on glass substrate with low electrical resistivity and high optical transmittance have been prepared by coating and sintering method. All-polycrystalline CdS/CdTe solar cells with different microstructure and properties of CdTe layer were fabricated by coating a number of CdTe slurries, which consisted of Cd and Te powders, an appropriate amount of propylene glycol and 2 or 7.5 w/o $CdC1_2$, on the sintered CdS films and by sintering the glass-CdS-(Cd+Te) composites at various temperature. To explore the dependence of the solar efficiency on the preparation conditions of the CdTe layer, Cd powder with an average particle size of $0.3{\mu}m$ or $5{\mu}m$ was prepared. The use of Cd with finer particles forms more dense or uniform microstructure of the nuclear of CdTe during the heating. Therefore the use of Cd with finer particles improves the efficiency of the sintered CdS/CdTe solar cell by improving the microstructure of sintered CdTe layer. But the difference of solar efficiency by varing a particle size of Cd is decreased with increasing amount of $CdC1_2$ in the (Cd+Te) layer. All-polycrystalline CdS/CdTe solar cells with an efficiency of 10.2% under solar irradiation have been fabricated using a Cd with finer particles.