JSTS:Journal of Semiconductor Technology and Science

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Thermal Stability of SiO2 Doped Ge2Sb2Te5 for Application in Phase Change Random Access Memory

  • Ryu, Seung-Wook (Department of Electrical Engineering, Stanford University) ;
  • Ahn, Young-Bae (Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University) ;
  • Lee, Jong-Ho (Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University) ;
  • Kim, Hyeong-Joon (Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University)
  • Received : 2011.06.25
  • Published : 2011.09.30
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Abstract

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

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