• Title/Summary/Keyword: $TeO_2$

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Effect of Post-Annealing and ZTO Thickness of ZTO/GZO Thin Film for Dye-Sensitized Solar Cell

  • Song, Sang-U;Lee, Gyeong-Ju;No, Ji-Hyeong;Park, On-Jeon;Kim, Hwan-Seon;Ji, Min-U;Mun, Byeong-Mu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.405-406
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    • 2013
  • Ga-doped ZnO (GZO)는 $300^{\circ}C$ 이상의 온도에서는 전기적으로 불안정하기 때문에 CIGS, CdTe, DSC와 같은 태양전지의 높은 공정온도 때문에 사용이 제한적이다. ZTO thin film은 Al2O3, SiO2, TiO2, ZnO tihin film과 비교하여 산소 및 수분에 대하여 투과성이 상대적으로 낮은 것으로 알려져 있다. 따라서 GZO single layer에 비하여 ZTO-GZO multi-layer를 구성하여 TCO를 제작하면, 높은 공정온도에서도 사용 가능하다. 실제 제작된 GZO single layer (300 nm)에서 비저항이 $7.69{\times}10^{-4}{\Omega}{\cdot}cm$에서 $500^{\circ}C$에서 열처리 후 $7.76{\times}10^{-2}{\Omega}{\cdot}cm$으로 급격하게 상승한다. ZTO single layer (420 nm)는 as-grown에서는 측정 불가했지만, $400^{\circ}C$에서 열처리 후 $3.52{\times}10^{-1}{\Omega}{\cdot}cm$ $500^{\circ}C$에서 열처리 후 $4.10{\times}10^{-1}{\Omega}{\cdot}cm$으로 열처리에 따른 큰 변화가 없다. 또한 ZTO-GZO multi-layer (720 nm)의 경우 비저항이 $2.11{\times}10^{-3}{\Omega}{\cdot}cm$에서 $500^{\circ}C$에서 열처리 후 $3.67{\times}10^{-3}{\Omega}{\cdot}cm$으로 GZO에 비하여 상대적으로 변화폭이 작다. 또한 ZTO의 두께에 따른 영향을 확인하기 위하여 ZTO를 2 scan, 4 scan, 6 scan 공정 진행 및 $500^{\circ}C$에서 열처리 후 ZTO, ZTO-GZO thin film의 비저항을 측정하였다. ZTO의 경우 $3.34{\times}10^{-1}{\Omega}{\cdot}cm$ (2 scan), $3.62{\times}10^{-1}{\Omega}{\cdot}cm$ (4 scan), $4.1{\times}10^{-1}{\Omega}{\cdot}cm$ (6 scan)으로 큰 차이가 없으며, ZTO-GZO에서도 $3.73{\times}10^{-3}{\Omega}{\cdot}cm$ (2 scan), $3.42{\times}10^{-3}{\Omega}{\cdot}cm$ (4 scan), $3.67{\times}10^{-3}{\Omega}{\cdot}cm$ (6 scan)으로 큰 차이가 없음을 확인하였다. 염료감응 태양전지에 적용하여 기존에 사용되는 FTO대신에 ZTO-GZO를 사용하며, 가격적 측면, 성능적 측면에서 개선 가능할 것으로 생각된다.

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Chloroplast-type Ferredoxin Involved in Reactivation of Catechol 2,3-Dioxygenase from Pseudomonas sp.S-47

  • Park, Dong-Woo;Chae, Jong-Chan;Kim, Young-Soo;Iida, Toshiya;Kudo, Toshiaki;Kim, Chi-Kyung
    • BMB Reports
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    • v.35 no.4
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    • pp.432-436
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    • 2002
  • Pseudomonas sp. S-47 is capable of degrading catechol and 4-chlorocatechol via the meta-cleavage pathway. XyITE products catalyze the dioxygenation of the aromatics. The sylT of the strain S-47 is located just upstream of the xylE gene. XylT of the strain S-47 is located just upstream of the xylE gene. XyIT is typical chloroplast-type ferredoxin, which is characterized by 4 cystein residues that are located at positions 41, 46, 49, and 81. The chloroplast-type ferredoxin of Pseudomonas sp. S-47 exhibited a 98% identity with that of P. putida mt-2(TOL plasmid) in the amino acid sequence, but only about a 40 to 60% identity with the corresponding enzymes from other organisms. We constructed two recombinant plasmids (pRES1 containing xylTE and pRES101 containing xylE without xylT) in order to examine the function of XyIT for the reactivation of the catechol 2,3-dioxygenase (XyIE) that is oxidized with hydrogen peroxide was recovered in the catechol 2,3-dioxygenase (C23O) activity about 4 mimutes after incubation, but the pRES101 showed no recovery. That means that the typical chloroplast-type ferredoxin (XyIT) of Pseudomonas sp. S-47 is involved in the reactivation of the oxidized C23O in the dioxygenolytic cleavage of aromatic compounds.

A study on the optical properties of PLT thin films with varying the La concentration by using the transmission spectrum (투과곡선을 이용한 La 농도에 따른 PLT 박막의 광학적 특성에 관한 연구)

  • 강성준;윤석민;윤영섭
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.5
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    • pp.22-31
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    • 1997
  • We have measured the optical properties, thickness, and energy band gap of the P $b_{1-x}$/100/L $a_{x}$100/ $Ti_{1-}$0.25x/100/ $O_{3}$ (PLT(x)) thin film prepared by the sol-gel method with varying the La concentration, x, fyom 15 nto 33 mol%. We have obtained the values from the tranmission spectrum and employed the envelope method in anayzing the spectrum. We have also performed the simulation of the transmission spectrum on the PC (personal computer) to verify the accuracy of the values 15 to 33mol%, the refractive index (at .lambda.=632.8nm) increases from 2.39 to 2.44. The extinction coefficient does not depend on the la concentration but mainly on te wavelength, and has the values between 0.2 and 0.5 at the wavelength shorter than 330nm and between 0.001 and 0.008 at the wavelength longer than 700nm. The energy band gap of the PLT (x) thin film has been obtained on the assumption of the direct band-to-band transition. It decreases from 3.28 to 3.17eV as the La concentration increases from 15 to 33 mol%. The thickness of the PLT(x) thin film has been also obtained in high accuracy by the envelope method..

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Properties and Peculiar Features of Application of Isoelectronically Doped $A^2B^6$ Compound-Based Scintillators

  • Ryzhikov, V.;Starzhinskiy, N.
    • Journal of Radiation Protection and Research
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    • v.30 no.2
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    • pp.77-84
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    • 2005
  • The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

Study on Characteristic difference of Semiconductor Radiation Detectors fabricated with a wet coating process

  • Choi, Chi-Won;Cho, Sung-Ho;Yun, Min-Suk;Kang, Sang-Sik;Park, Ji-Koon;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.192-193
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    • 2006
  • The wet coating process could easily be made from large area film with printing paste mixed with semiconductor and binder material at room temperature. Semiconductor film fabricated about 25mm thickness was evaluated by field emissions-canning electron microscopy (FE-SEM). X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The $Hgl_2$ semiconductor was shown in much lower dark current than the others, but the best sensitivity. In this paper, reactivity and combination character of semiconductor and binder material that affect electrical and X-ray detection properties would prove out though experimental results.

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Precipitation behaviors of Cs and Re(/Tc) by NaTPB and TPPCl from a simulated fission products-$(Na_2CO_3-NaHCO_3)-H_2O_2$ solution (모의 FP-$(Na_2CO_3-NaHCO_3)-H_2O_2$ 용액으로부터 NaTPB 및 TPPCl에 의한 Cs 및 Re(/Tc)의 침전 거동)

  • Lee, Eil-Hee;Lim, Jae-Gwan;Chung, Dong-Yong;Yang, Han-Beum;Kim, Kwang-Wook
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.8 no.2
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    • pp.115-122
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    • 2010
  • In this study, the removal of Cs and Tc from a simulated fission products (FP) solution which were co-dissolved with U during the oxidative-dissolution of spent fuel in a mixed carbonate solution of $(Na_2CO_3-NaHCO_3)-H_2O_2$ was investigated by using a selective precipitation method. As Cs and Tc might cause an unstable behavior due to the high decay heat emission of Cs as well as the fast migration of Tc when disposed of underground, it is one of the important issues to removal them in views of the increase of disposal safety. The precipitation of Cs and Re (as a surrogate for Tc) was examined by introducing sodium tetraphenylborate (NaTPB) and tetraphenylphosponium chloride (TPPCl), respectively. Precipitation of Cs by NaTPB and that of Re by TPPCl were completed within 5 minutes. Their precipitation rates were not influenced so much by the temperature and stirring speed even if they were increased by up to $50^{\circ}C$ and 1,000 rpm. However, the pH of the solution was found to have a great influence on the precipitation with NaTPB and TPPCl. Since Mo tends to co-precipitate with Re at a lower pH, especially, it was effective that a selective precipitation of Re by TPPCl was carried out at pH of above 9 without co-precipitation of Mo and Re. Over 99% of Cs was precipitated when the ratio of [NaTPB]/[Cs]>1 and more than 99% of Re, likewise, was precipitated when the ratio of [TPPCl]/[Re]>1.

Diagnosis of Graft-Versus-Host Disease after Bone Marrow Transplantation by in vivo Proton MR Spectroscopy of the Liver: Correlation with Pathologic Results

  • Cho, Soon-Gu;Lee, Moon-Hee;Suh, Chang-Hae
    • Proceedings of the KSMRM Conference
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    • 2001.11a
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    • pp.135-135
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    • 2001
  • Purpose: To know the differences of the proton MR spectroscopic features of the liver between th patients with graft-versus-host disease (GVHD) and without GVHD (non-GVHD) after to marrow transplantation (BMT), and to evaluate the possibility to discriminate GVHD fro non-GVHD by analysis of the in vivo proton MR spectra. Method: We evaluated the in vivo proton MR spectra from the livers of 37 patients wh underwent BMT. Our series included 14 cases with GVHD and 23 without GVHD in the liver. Nineteen men and 18 women were included in our series. All cases of GVHD and 2 o non-GVHD were confirmed by liver biopsy and remaining of non-GVHD by evaluation clinical follow up. Proton MR spectroscopy (1H-MRS) was performed at 1.5T GE Sign Horizon (GE Medical System, Milwaukee, USA) system using localized proton STEAM sequence and body coil in all cases with subjects were located in supine position. N respiratory interruption was required during the spectroscopic signal acquisition. Paramete using in MRS were: TR = over 3000ms, TE = 30ms, number of scans = 128, voxel size = ($2{\times}2{\times}2$)$cm^3$, and one NEX. We evaluated the spectra with an attention to the differences o patterns of the peaks between GVHD and non-GVHD groups. The ratio of peak area of peaks at 1.6-4.1ppm to lipid (0.9-1.6ppm) [P(1.6-4.1ppm)/P(0.9-1.6ppm)] was calculated in GVHD and non-GVHD group, and compared the results between these groups. We als evaluated the sensitivity and specificity for discriminating GVHD from non-GVHD by anal of 1H-MRS.

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ICM - Trophectoderm Cell Numbers of Mouse IVF/IVC Blastocysts (체외생산된 생쥐 배반포기배의 ICM과 Trophectoderm 세포수에 관한 연구)

  • Kim, E.Y.;Kim, S.E.;Uhm, S.J.;Yoon, S.H.;Park, S.P.;Chung, K.S.;Lim, J.H.
    • Clinical and Experimental Reproductive Medicine
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    • v.23 no.1
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    • pp.25-32
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    • 1996
  • This work has been carried out to examine the number of Total, ICM and TE cells of F1 mouse blastcysts at day 4 after IVF by differential labelling of the nuclei with polynucleotide-specific fluorochromes and to obtain a fundamental information of preimplantation mouse embryo development. Blastocysts produced by superovulated B6CBA F1(C57BL/${\times}$CBA) eggs were inseminated with $1{\times}10^6$spermatozoa/ml and cultured in M16 medium at $37^{\circ}C$, 5% $CO_2$ incubator for 95hrs. Blastocysts were classified as early, middle, expanded and hatching stage according to the developmental morphology; blastocoel expansion and zona thickness. The results obtained in these experiments were summarized as follows; 1) The development rate of blastocysts at 95hrs after IVF was 86.7% and classified blastocysts to early, middle, expanded and hatching were 16.3%, 18.9%, 10.5% and 40.9%, respectively. 2) The numbers of total blastomere using bisbenzimide in the classified blastocysts to early, middle, expanded and hatching were 35.6${\pm}$1O.4, 49.4${\pm}$8.6, 60.8${\pm}$1O.7 and 62.7${\pm}$13.9, respectively. 3) In ICM and TE cell number by using differential labelling with polynucleotide-specific fluorochrome in the classified blastocysts to early, middle, expanded and hatching; ICM numbers were 9.6${\pm}$3.0, 13.6${\pm}$3.9, 16.0${\pm}$3.3 and 19.5${\pm}$4.6, respectively and TE cell numbers were 30.6${\pm}$5.1, 39.9${\pm}$5.8, 42.2${\pm}$8.1 and 43.7${\pm}$11.1, respectively. These results showed the same increase pattern according to development advance level. Also, when compared with the results of total count were obtained between bisbenzimide only and differential labelling, both of them showed the same increase pattern according to development level and at the same time their cell numbers were almost the same. So, rapid and simple cell count method using differential labelling can be used for the examination of later preimplantation development or as an indicator of embryo quality according to the variables of culture conditions.

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Improving the Efficiency of SnS Thin Film Solar Cells by Adjusting the Mg/(Mg+Zn) Ratio of Secondary Buffer Layer ZnMgO Thin Film (2차 버퍼층 ZnMgO 박막의 Mg/(Mg+Zn) 비율 조절을 통한 SnS 박막 태양전지 효율 향상)

  • Lee, Hyo Seok;Cho, Jae Yu;Youn, Sung-Min;Jeong, Chaehwan;Heo, Jaeyeong
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.566-572
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    • 2020
  • In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

펄스레이저 증착법으로 성장된 ZnSe 박막에서의 깊은준위 에너지밴드 형성에 대한 연구

  • Jo, Seong-Guk;Park, Sang-U;Kim, Eun-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.583-583
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    • 2012
  • 최근 석유 자원의 고갈로 인한 대체자원의 관심이 커지면서 박막 태양전지에 대한 연구가 활발히 진행되고 있다. 기존의 단일 박막 태양전지는 Shockley-Queisser limit인 40.7%가 변환 효율의 최대값으로 한계가 정해져있다. 이 한계를 넘기기 위하여 현재 여러 층의 박막을 쌓은 tandem 태양전지, 양자점을 이용한 태양전지, 그리고 중간밴드계 태양전지가 제시되고 있다. 중간 밴드계 태양전지는 이론적으로 변환 효율이 63.2%에 달하며 제조 공정이 매우 용이하다는 장점을 가지고 있다. 이중에 ZnSe는 에너지밴드갭이 상온에서 2.7 eV를 가지고 있는 물질로서 파란색 빛을 내는 발광소자로 각광을 받고 있고, 산소를 주입했을 경우에 p형이 되는 성질과 자연적으로 n 형인 성질로 인해 박막 태양전지로 응용성에 대한 관심이 커지고 있다. 산소나 질소를 주입했을 경우 페르미준위 근처에서 중간밴드가 형성되었다는 연구결과들은 ZnTe(O)나 GaNAs를 통하여 확인되었으나, 현재까지 ZnSe를 이용한 중간밴드 태양전지에 대한 연구결과들은 거의 없는 상태이다. 본 연구에서는 ZnSe를 다양한 기판 온도에서 펄스레이저 증착법을 이용하여 성장하였고 성장하는 동안 산소 노출조건을 조절하여 깊은준위 에너지밴드형성에 대한 연구를 진행하였다. 성장온도와 산소 노출량에 따른 깊은준위에 대한 변화를 관찰하기 위하여 photoluminescence 스펙트럼을 분석하였으며, 박막의 품질에 대해 조사하기 위하여 X-ray diffraction을 이용하였다.

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