Journal of Radiation Protection and Research

The Korean Association for Radiation Protection (대한방사선방어학회)
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Properties and Peculiar Features of Application of Isoelectronically Doped $A^2B^6$ Compound-Based Scintillators

  • Ryzhikov, V. (Institute for Scintillation Materials, STC Institute for Single Crystals, National Academy of Science) ;
  • Starzhinskiy, N. (Institute for Scintillation Materials, STC Institute for Single Crystals, National Academy of Science)
  • Published : 2005.06.30
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Abstract

The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

Keywords

References

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