• Journal of the Korean Ceramic Society
• /
• v.34 no.8
• /
• pp.791-796
• /
• 1997

The influence of Ti/Sr ratio on abnormal grain growth of Nb-doped SrTiO3 was investigated. For specimens which were isothermally sintered at temperatures above 144$0^{\circ}C$, the nucleation and growth rates of abnormal grain growth were decreased with increasing Ti/Sr ratio. But the onset time of abnormal grain growth was increased with increasing Ti/Sr ratio. The cross-section of abnormally grown grains was mostly hexagonal. When the specimens were quenched in air after they reached their setting temperatures at a heating rate of 3$^{\circ}C$/min, the onset temperature of abnormal grain growth was increased with increasing Ti/Sr ratio and the final grain size was independent of Ti/Sr ratio. The cross-section of abnormally grown grains was mostly rectangular.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.289-290
• /
• 2006

[ $SrTiO_3$ ] is usually added as shifters in order to move the $T_C$ of $BaTiO_3$ to lower temperatures because it is well established that the $T_C$ of $BaTiO_3$ decreases linearly with a solid solution of $Sr^{+2}$ in place of $Ba^{+2}$. It is not fully understood yet, however, how $SrTiO_3$ influences on the peak value of the dielectric constant $(\varepsilon_{max})$ at the $T_C$ of $BaTiO_3$. This research reports the effect of $SrTiO_3$ addition on εmax at the $T_C$ of $BaTiO_3$ ceramics. Based on the chemical composition and the grain size dependence of the dielectric property of $BaTiO_3$ ceramics, functionally graded $(Ba,Sr)TiO_3$ composites were designed and fabricated. Multi-layered $(Ba,Sr)TiO_3$ composites with a compositional gradient of $SrTiO_3$ exhibited a low temperature coefficient and high dielectric constant in a wide temperature range.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1850-1852
• /
• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• Journal of the Korean Ceramic Society
• /
• v.24 no.3
• /
• pp.270-276
• /
• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.400-403
• /
• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• Journal of the Korean Ceramic Society
• /
• v.28 no.4
• /
• pp.261-268
• /
• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• Analytical Science and Technology
• /
• v.6 no.2
• /
• pp.239-246
• /
• 1993

The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.203-206
• /
• 2001

The effects of SrTiO$_3$ addition and sintering temperature on the microstructure and magnetic properties of yttrium iron garnet (YIG) were investigated. The lattice Parameter increasing of sintered YlG with small amount of SrTiO$_3$ addition was supposed to be substituted $Y^{+3}$, Fe$^{+3}$ ions to Sr$^{+2}$,Ti$^{+4}$ ions which are relatively large in ionic ranius. A YIG specimen sintered at 142$0^{\circ}C$ with 0.2mol% SrTiO$_3$ showed above 98% densification of theoretical density. Saturation magnetization (M$_s$) at room temperature decreased a little bit with increasing SrTiO$_3$, addition but no great chance. In addition, the coercivity (H$_c$) was almost not changed by sintering temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.682-685
• /
• 2002

The $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction pattern of the $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase of the $MgTi_2O_5$ were appeared. In the case of $0.96MgTiO_3-0.04SrTiO_3+B_2O_3$(10wt%) ceramics sintered $1225^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 19.82, 62,735GHz, $-2.983ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.11
• /
• pp.1019-1023
• /
• 2008

Photoluminescence properties of $SrTiO_3$:Sm red phosphors synthesized by solid state reaction method were studied under 254 nm excitation. Emission bands at 576 nm and 616 nm in heavily $Sm^{3+}$ ion doped $SrTiO_3$:Sm phosphors were observed, which were attributed to $^4G_{5/2}\rightarrow{^6}H_{5/2}$ and $^4G_{5/2}\rightarrow{^6}H_{7/2}$ transition of $Sm^{3+}$, respectively. The $Sm^{3+}$ ion concentration exhibiting the maximum emission intensity in the $SrTiO_3$:Sm was 30 mol%. The luminescence caused by $Sm^{3+}$ in the $SrTiO_3$:Sm phosphors was interpreted by the energy transfer between $Sm^{3+}$ ions.