• Journal of Korea Foundry Society
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• v.38 no.5
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• pp.87-94
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• 2018

The effects of Sr and (Ti-B) additives on the tensile properties of AC4A recycled (35% scrap content) aluminum alloys were investigated. An acicular morphology of the eutectic Si phase of as-cast specimens was converted to a fibrous morphology upon the addition of Sr. Moreover, morphology of the Sr modified eutectic Si phase became finer due to a T6 heat treatment. The grain size of the ${\alpha}$-solid solution was decreased by the addition of (Ti-B) additives. Depending on the treatment conditions of the as-cast specimens, i.e., no addition, a Sr addition and a (Ti-B)+Sr addition, the tensile strength levels of the as-cast specimens were 182, 192, and 204MPa, respectively. The corresponding strengths of T6 heat-treated specimens were 293, 308, and 318MPa. Elongations of the as-cast specimens were 2.2, 3.1, and 5.6%, and the corresponding elongations of the T6 heat-treated specimens were 4.6, 6.1, and 7.6%. The percentage of the reduced section area in the tensile specimens was also increased by the Sr and (Ti-B) additives. Sr and (Ti-B) additives changed the microstructure and the distribution of defects in the castings, resulting in an improvement of the tensile properties of AC4A aluminum alloys. According to our test results, recycled (35% scrap content) AC4A aluminum alloy met all of the KS requirements of the tensile strength and elongation values of AC4A aluminum alloy except for the elongation value of the one specimen condition, in this case the as-cast no-addition condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.383-387
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• 2002

N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.

• Journal of Korean Society of Forest Science
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• v.96 no.6
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• pp.737-741
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• 2007

Typical phytoplasma witches' broom symptoms were observed in black locust (Robinia pseudoacacia L.) in Korea. The symptoms of the disease were showing abnormally small leaves, shortened intemodes and proliferation of shoots. The phytoplasmas were detected consistently in all the symptomatic samples by the amplification with phytoplasma universal primer pairs P1/P7 and R16F2n/R2, and the expected size was 1.8 kb and 1.2 kb. However, the phytoplasma DNA was not detected in healthy seedling. Based on sequence analysis of amplified region, this phytoplasma has close homologies with aster yellow, mulberry dwarf, maize bushy stunt, ash witches' broom and sumac witches' broom phytoplasmas, more than 99.2% but showed homologies with black locust witches' broom (GeneBank Accession No. AF 244363), and jujube witches' broom, 88.6% and 87.7%, respectively. This phylogetic analysis indicates that the black locust witches' broom phytoplasma founded in korea should be classified in the Candidatus phytoplasma asteris (16Sr I) group and clearly distinct from the black locust witches' broom group 16Sr III (peach X-disease phytoplasma group).

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.484-489
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• 1995

The synthesis of new bismuth-barium containing members of layered cuprates with 2201 type structure was reported. By solution calorimetry the formation enthalpies for Bi2MLaCuO6.5 (M=Ba, Ba0.5Sr0.5, Sr) were obtained. Crucial influence of partial oxygen pressure and size of lanthanoid on stability of layered cuprates was shown. Electronic states of variable valence atoms were studied by voltammetry of solids.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.6-11
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• 2004

YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.252-261
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• 1994

The $(Ba_{1-X}Sr_X)ZrO_3$ powder showing chemically pure and fine particle size was attempted to be synthesized by the oxalate method. The objective of this study is to determine the optimum synthesis condition of stable $(Ba_{1-X}Sr_X)ZrO_3$ powder in terms of the temperatures coefficient of resonant frequency ${\tau}_f$ by examining the microstructure and dielectric properties of the synthesized powder. The six compounds (x=0, 0.2, 0.4, 0.6, 0.8, 1) of $(Ba_{1-X}Sr_X)ZrO_3$ were prepared by the oxalate method, and then calcined at $1000^{\circ}C$ to obtain the crystalline $(Ba_{1-X}Sr_X)ZrO_3$ powder. The synthesized powder showed the globular-shape and average particle size of less than $0.2 \mu\textrm{m}$. The composition of x=0.5, i.e., half of Ba was replaced by Sr, is experted to show the zero value of temperatures coefficient of capacitance ${\tau}_c$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.697-700
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• 2001

In this paper, the structural and electrical properties of the Sr$_{1-x}$ Ca$_{x}$TiO$_3$ (0$\leq$x$\leq$0.2) (0$\leq$r$\leq$0.2)-based grain boundary layer ceramics were investigated by X-ray, SEM and V-I system. Increasing the Ca content, the average grain size and the lattice constant were decreased. The relative density of all specimens was >96%. The 2nd phase formed by thermal diffusing from the surface lead to a very excellent electrical properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C< $\pm$ 10%.\pm$ 10%.%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.72-75
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• 2001

In this paper, the $Sr_{1-x}Ca_{x}TiO_{3}(0{\leq}x{\leq}0.2)$ 2)-based grain boundary layer ceramics were fabricated to measured dielectric properties and voltage-current properties. The sintering temperature and time were $1420\sim1520^{\circ}C$, 4hours, in $N_{2}$ gas, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The 2nd phase formed by thermal diffusion from the surface lead to a very high apparent dielectric constant, $\varepsilon_r$ > 50000. X-ray diffraction patterns exhibited cubic structure for all specimens. Increasing content of Ca, the peak intensity were decreased.ﱇﶖ⨀ਆᘍ܀㘱㔮㠹㬅K䍄乍

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.46-51
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• 2003

Ferroelectric $Sr_{0.7}Bi_{2.1}Ta_{2.0}O_9$ thin films with 200 nm thicknesses were deposited on $Pt/Ti/SiO_2/Si$ substrate by liquid delivery MOCVD process. In these experiments, $Sr(TMHD)_2{\cdot}pmdeta,\; Bi(ph)_3$ and $Ta(O^i/Pr)_4(TMHD)$ were used as precursors, which were dissolved in n-butyl acetate and pentamethyldiethylenetriamine. Substrate temperature and reactor pressure of this experiment was $570^{\circ}C$and 5 Torr, respectively. The remanent polarization value (2Pr) of SBT thin film with annealed at $780^{\circ}C$was$7.247{\mu}C/cm^2$and$8.485 {\mu}C/cm^2$by applying 3 V and 5 V, respectively.

• Current Applied Physics
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• v.18 no.11
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• pp.1359-1367
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• 2018

In this work, we investigated the spectroscopic properties of $LiY_xSr_yZrO_{3+{\alpha}:Eu^{3+}$, a red emitting nanophosphor based on $SrZrO_3$ perovskite. The synthesis process was an auto-combustion process. X-ray diffractograms show the orthorhombic structure of $SrZrO_3$. Photoluminescence (PL) excitation spectra display a split charge transfer band revealing the presence of two possible sites for the $Eu^{3+}$ ions. The emission spectra at 231 nm excitation illustrate the dominance of the $^5D_0-^7F_1$ transition, which is an indication that the smaller sized $Eu^{3+}$ ions are mostly situated at the more ordered (symmetric) $Sr^{2+}$ sites. The emission spectra at 292 nm & 397 nm excitations show the dominance of $^5D_0-^7F_2$ transition which suggests some of the $Eu^{3+}$ ions are also situated at the distorted $Zr^{4+}$ sites. Both the intensity parameters, asymmetry ratio and the decay lifetimes of the nanophosphors show dependence on $Y^{3+}$ concentration, signifying a modification in the host structure. Maximum quantum efficiency value of ${\approx}46%$ was obtained for the nanophosphors which indicate the need for improvement for practical applications. CIE coordinates show the suitability of this phosphor for both red emission in LED and as a complementary colour for white LED applications.