• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.134-134
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• 2003

SnO$_2$를 모물질로 하는 가스센서는 n형 산화물 반도체로서 공기중의 산소의 흡탈착 및 전자의 수수에 의해 전기전도도의 변화로 특정 가스를 감지한다. 지금까지 반도체식 가스센서의 모물질로 가장 많이 연구되어 왔지만 아직도 선택성, 안정성 등 여러 가지 문제를 안고 있다. 그리고 개선방안으로 귀금속 촉매의 첨가 및 입자의 크기의 조절 등이 흔히 연구되어 왔다. 따라서 본 연구에서는 순수한 SnO$_2$ 를 이용하여 소결 온도 및 입자 크기에 의한 영향을 CO가스 및 수분에 대한 감도, 반응 시간을 통해 알아보았다. 수열 합성 및 침전 법으로 나노 크기의 SnO$_2$ 분말을 합성하여 스크린 인쇄법으로 후막 가스센서를 제조하였다 침전법에서 SnCl$_4$에 암모니아수로 pH=10.5로 적정하여 SnO$_2$ 분말을 얻었다. 그리고 입자 크기를 조절하기 위해 수열 합성 시 autoclave 내의 수열처리 온도를 100, 150, 20$0^{\circ}C$로 조절하여 SnO$_2$ 분말을 제조하고 입자 크기와 성분분석을 위해 XRD, SEM, TEM, BET 측정을 하였다. 그 결과 침전법으로 제조한 입자의 크기는 20nm 정도였으며 수열 처리한 SnO$_2$ 입자는 10nm이하의 미세한 입자를 얻을 수 있었다. 수열 합성 시 온도가 높아질수록 더 작은 입자 크기를 얻을 수 있었고 600, 7()0, 80$0^{\circ}C$ 열처리 후 입자성장이 침전법에 의한 SnO$_2$ 분말보다 더 작게 일어났다. 이렇게 제조한 나노크기의 SnO$_2$ 분말을 이용하여 습도 및 CO 가스에 대한 그 특실을 평가하였다. CO 20ppm에 대하여 40%정도의 감도를 보였으며 입자가 작아질수록 높은 감도를 보이는 것을 확인 할 수 있었다. 반면 CO 가스와 반응 후 회복 시 입자 의기가 작아질수록 회복이 늦어짐을 알 수 있었다. 그리고 15$0^{\circ}C$에서 습도에 대한 반응 후 회복시간을 조사해보니 같은 결과를 얻을 수 있었다. 이것은 입자 필기가 작아질수록 많은 흡착 사이트를 제공함으로써 높은 감도를 가지지만 반면 다량의 흡착된 가스들이 탈착 하는데 더 많은 시간이 소요되었기 때문이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• Journal of the Korean Magnetics Society
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• v.20 no.5
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• pp.187-190
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• 2010

$Sn_{0.99}{^{57}Fe}_{0.01}O_2$ prepared by a sol-gel method, and studied by x-ray diffractometer, vibrating magnetometer, Superconducting quantum interference devices and M$\ddot{o}$ssbauer spectroscopy. the crystal structure were found to be a rutile tetragonal structure with space group $P4_2$/mnm, and oxygen deficiency are 5.6 % by Rietveld refinement. magnetization value were $M_s=1.95{\times}10^{-2}{\mu}_B/Fe$ at room temperature, and Curri-weiss temperature were and ${\theta}_{cw}$ = 18 k, measurement of VSM and SQUID, respectively. Mssbauer spectra of $Sn_{0.99}{^{57}Fe}_{0.01}O_2$ have been Sextet taken at various temperatures ranging from 4.2 K to RT, and isomer shift value $\delta$ = 0.18~0.36 mm/s of $^{57}Fe$ ion site all of the temperature range the state shows ferric.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.12
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• pp.2263-2273
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• 2000

Catalytic wet air oxidation of acetic acid over Mn-Ce based catalysts deposited on various supports ($SiO_2$, $TiO_2$, $ZrO_2$), $ZrSiO_4$, $ZrO_2(10wt%)/TiO_2$) have been carried out in high pressure microreactors. Also, promotional effects by small addition(O.5~1.0 wt%) of p-type semiconductors (CoO, $Ag_2O$, SnO) have been investigated. From the screening tests for initial activity ranking, both Mn(2.8)-Ce(7.2 wt%) and Ru(O.4)Mn(2.7)-Ce(6.9 wt%) supported on $TiO_2$ were selected as the promising reference candidates. In $Mn-Ce/TiO_2$ reference catalyst, addition of small amount of each p-type semiconductor (Co, Sn and Ag) resulted in activity promotional effect and the degree of the increase was in the following order: Co> Ag > Sn. Especially, $Mn-Ce/TiO_2$ promoted with 0.5 wt% Co gave the 2.6 folds activity increase compared to the reference case attributing to the surface area increase as well as synergy effect. In $Ru-Mn-Ce/TiO_2$ reference catalyst, only Co(1.0 wt%) promoted case showed a little reaction rate increase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.589-598
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• 1997

The effects of PT/PZ ratio variations in a modified PZT system on crystal structure and electrical properties were studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋xPbTiO_3＋yPbZrO_3$＋0.4Wt% $MnO_2$(＝0.55PSS＋0.11PT＋0.84PZ＋0.4wt%$MnO_2$ ; x＋y=0.95) systems with variations of PT/PZ from 0.50/0.45 to 0.l1/0.84 were sintered at $1250^{\circ}C$ for 2 hr, and then sintering density, crystal structure, dielctric, piezoelectric, pyroelectic and voltage responsity to infrared were investigated. Sintering density was increased from 7.52g/$\textrm {cm}^3$ to 7.82g/$\textrm {cm}^3$ with increasing PZ content. Dielectric constants at 1 KHz were decreased from 1147 to 193 with variation of PT/PZ from 0.50/0.45 to 0.l1/0.84 after poling of $4 KV_{DC}$/mm at $140^{\circ}C$ for 20 minutes. All Dielectric losses at 1 KHz were less than 1 % in all specimens. $K_{p}$ was increased near to 1 of PT/PZ, and maximun value of 48.2 % was .at 0.45/0.50. Pyroelectric coefficient of PT/PZ with 0.l1/0.84 was maximun value, 0.0541 C/$\m^2$K, and voltage responsity to infrared was 1.5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.563-566
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• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.666-672
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• 2014

We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal $SiO_2$, a plasma-enhanced chemical vapor deposition (PECVD) $SiO_x$, a $150^{\circ}C$-deposited PEVCD $SiO_x$, and a $300^{\circ}C$-deposited PECVD $SiO_x$. Among the devices, the one with the $150^{\circ}C$-deposited PEVCD $SiO_x$ exhibits the best electrical performance including a high field-effect mobility ($=4.86cm^2/Vs$), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localized-trap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1351_1352
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• 2009

We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.258-258
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• 2016

최근 디스플레이 산업의 발전에 따라 고성능 디스플레이가 요구되며, 디스플레이의 백플레인 (backplane) TFT (thin film transistor) 구동속도를 증가시키기 위한 연구가 활발히 진행되고 있다. 트랜지스터의 구동속도를 증가시키기 위해 높은 이동도는 중요한 요소 중 하나이다. 그러나, 기존 백플레인 TFT에 주로 사용된 amorphous silicon (a-Si)은 대면적화가 용이하며 가격이 저렴하지만, 이동도가 낮다는 (< $1cm2/V{\cdot}s$) 단점이 있다. 따라서 전기적 특성이 우수한 산화물 반도체가 기존의 a-Si의 대체 물질로써 각광받고 있다. 산화물 반도체는 비정질 상태임에도 불구하고 a-Si에 비해 이동도 (> $10cm2/V{\cdot}s$)가 높고, 가시광 영역에서 투명하며 저온에서 공정이 가능하다는 장점이 있다. 하지만, 차세대 디스플레이 백플레인에서는 더 높은 이동도 (> $30cm2/V{\cdot}s$)를 가지는 TFT가 요구된다. 따라서, 본 연구에서는 차세대 디스플레이에서 요구되는 높은 이동도를 갖는 TFT를 제작하기 위하여, amorphous In-Ga-Zn-O (a-IGZO) 채널하부에 화학적으로 안정하고 전도성이 뛰어난 SnO2 채널을 얇게 형성하여 TFT를 제작하였다. 표준 RCA 세정을 통하여 p-type Si 기판을 세정한 후, 열산화 공정을 거쳐서 두께 100 nm의 SiO2 게이트 절연막을 형성하였다. 본 연구에서 제안된 적층된 채널을 형성하기 위하여 5 nm 두계의 SnO2 층을 RF 스퍼터를 이용하여 증착하였으며, 순차적으로 a-IGZO 층을 65 nm의 두께로 증착하였다. 그 후, 소스/드레인 영역은 e-beam evaporator를 이용하여 Ti와 Al을 각각 5 nm와 120 nm의 두께로 증착하였다. 후속 열처리는 퍼니스로 N2 분위기에서 $600^{\circ}C$의 온도로 30 분 동안 실시하였다. 제작된 소자에 대하여 TFT의 전달 및 출력 특성을 비교한 결과, SnO2 층을 형성한 TFT에서 더 뛰어난 전달 및 출력 특성을 나타내었으며 이동도는 $8.7cm2/V{\cdot}s$에서 $70cm2/V{\cdot}s$로 크게 향상되는 것을 확인하였다. 결과적으로, 채널층 하부에 SnO2 층을 형성하는 방법은 추후 높은 이동도를 요구하는 디스플레이 백플레인 TFT 제작에 적용이 가능할 것으로 기대된다.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.399-403
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• 2012

SnO thin films were fabricated by rf reactive sputtering on borosilicate substrates with an Sn target and Ar/$O_2$ gas mixture. The effect of rf power on the structural, electrical, and optical properties of SnO thin films was investigated with XRD, AFM, SEM, Hall effect measurements, and UV-Vis spectrometer. As a plasma power increased the crystallinity with a preferred orientation of SnO thin films was improved and the grain size slightly increased. However the grains were coalesced and excessively irregular in shape. The electrical conductivity of SnO thin films demonstrated a relatively low p-type conductivity of 0.024 $(Wcm)^{-1}$ at a higher power condition. Lastly, SnO thin films had poor optical transmittance in the visible range as a plasma power increased.