• Korean Journal of Materials Research
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• v.10 no.4
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• pp.276-281
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• 2000

Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.9-14
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• 1986

$\beta$-SiC bonded SiC bodies were prepared from various conditions such as several compositions of(Si+C)/$\alpha$ -SiC ratio and different firing schedules and were respectively investigated compressive strength MOR and mi-crostructure. One firing schedule which produced the specimens that had $\beta$-SiC neck form with the highest strength was selected and experimented by each firing temperature. results obtained are as follows : 1) The amount of (Si+C) for th highest MOR of SiC-(Si+C) sintered body is 20wt% 2) By adding 20wt% content of (Si+C) and heating up to 1, 500 with soaking 3hrs respectively at 1,150$^{\circ}C$ 1,250$^{\circ}C$ 1,350$^{\circ}C$ and 1,400$^{\circ}C$ the highest MOR of fired specimen was resulted and its microstructure of ma-trix was composed of close $\beta$-SiC neck. 3) Microstructure of $\beta$-SiC were different greatly from each other by firing time and/or quantity of adding mix-ture and it was confirmed that they were composed of neck particle-like and heterogeneous texture. 4)$\beta$-SiC synthesis proceed rapidly at the temperature between 1,250$^{\circ}C$ and 1,350$^{\circ}C$ 5) All of the properties of 85 SiC-20(Si+C) specimen improved according to increasing temperature above 1,350$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Journal of Pharmacopuncture
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• v.7 no.2
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• pp.57-64
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• 2004

This study was carried to identify the component of Small Intestine Meridian Muscle in human, dividing the regional muscle group into outer, middle, and inner layer. the inner part of body surface were opened widely to demonstrate muscles, nerve, blood vessels and the others, displaying the inner structure of Small Intestine Meridian Muscle. We obtained the results as follows; 1. Small Intestine Meridian Muscle is composed of the muscle, nerve and blood vessels. 2. In human anatomy, it is present the difference between a term of nerve or blood vessels which control the muscle of Meridian Muscle and those which pass near by Meridian Muscle. 3. The inner composition of meridian muscle in human arm is as follows ; 1) Muscle ; Abd. digiti minimi muscle(SI-2, 3, 4), pisometacarpal lig.(SI-4), ext. retinaculum. ext. carpi ulnaris m. tendon.(SI-5, 6), ulnar collateral lig.(SI-5), ext. digiti minimi m. tendon(SI-6), ext. carpi ulnaris(SI-7), triceps brachii(SI-9), teres major(SI-9), deltoid(SI-10), infraspinatus(SI-10, 11), trapezius(Sl-12, 13, 14, 15), supraspinatus(SI-12, 13), lesser rhomboid(SI-14), erector spinae(SI-14, 15), levator scapular(SI-15), sternocleidomastoid(SI-16, 17), splenius capitis(SI-16), semispinalis capitis(SI-16), digasuicus(SI-17), zygomaticus major(Il-18), masseter(SI-18), auriculoris anterior(SI-19) 2) Nerve ; Dorsal branch of ulnar nerve(SI-1, 2, 3, 4, 5, 6), br. of mod. antebrachial cutaneous n.(SI-6, 7), br. of post. antebrachial cutaneous n.(SI-6,7), br. of radial n.(SI-7), ulnar n.(SI-8), br. of axillary n.(SI-9), radial n.(SI-9), subscapular n. br.(SI-9), cutaneous n. br. from C7, 8(SI-10, 14), suprascapular n.(SI-10, 11, 12, 13), intercostal n. br. from T2(SI-11), lat. supraclavicular n. br.(SI-12), intercostal n. br. from C8, T1(SI-12), accessory n. br.(SI-12, 13, 14, 15, 16, 17), intercostal n. br. from T1,2(SI-13), dorsal scapular n.(SI-14, 15), cutaneous n. br. from C6, C7(SI-15), transverse cervical n.(SI-16), lesser occipital n. & great auricular n. from cervical plexus(SI-16), cervical n. from C2,3(SI-16), fascial n. br.(SI-17), great auricular n. br.(SI-17), cervical n. br. from C2(SI-17), vagus n.(SI-17),hypoglossal n.(SI-17), glossopharyngeal n.(SI-17), sympathetic trunk(SI-17), zygomatic br. of fascial n.(SI-18), maxillary n. br.(SI-18), auriculotemporal n.(SI-19), temporal br. of fascial n.(SI-19) 3) Blood vessels ; Dorsal digital vein.(SI-1), dorsal br. of proper palmar digital artery(SI-1), br. of dorsal metacarpal a. & v.(SI-2, 3, 4), dorsal carpal br. of ulnar a.(SI-4, 5), post. interosseous a. br.(SI-6,7), post. ulnar recurrent a.(SI-8), circuirflex scapular a.(SI-9, 11) , post. circumflex humeral a. br.(SI-10), suprascapular a.(SI-10, 11, 12, 13), first intercostal a. br.(SI-12, 14), transverse cervical a. br.(SI-12,13,14,15), second intercostal a. br.(SI-13), dorsal scapular a. br.(SI-13, 14, 15), ext. jugular v.(SI-16, 17), occipital a. br.(SI-16), Ext. jugular v. br.(SI-17), post. auricular a.(SI-17), int. jugular v.(SI-17), int. carotid a.(SI-17), transverse fascial a. & v.(SI-18),maxillary a. br.(SI-18), superficial temporal a. & v.(SI-19).

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.179-182
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• 2007

Polycrystaline (poly) 3C-SiC thin film on n-type and p-type Si were deposited by APCVD using HMDS, $H_2$, and Ar gas at $1180^{\circ}C$ for 3 hour. And then the schottky diode with Au/poly 3C-Sic/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) value were measured as 0.84 V, over 140 V, 61nm, and $2.7{\times}10^{19}\;cm^3$, respectively. The p-n junction diode fabricated by poly 3C-SiC was obtained like characteristics of single 3C-SiC p-n junction diode. Therefore, its poly 3C-SiC thin films are suitable MEMS applications in conjuction with Si fabrication technology.

• Journal of the Korean Ceramic Society
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• v.43 no.10 s.293
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• pp.660-665
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• 2006

The mechanical properties of $Al_2O_3$-SiC composites manufactured with adding various amount and size of SiC particles have been measured and analyzed. Generally, the elastic modulus of the composites shows about 50% less than that of PL-8 (45 wt% $Al_2O_3$-51 wt% $SiO_2$-4 wt% other oxides), but the flexural strength is similar with each other. The impact resistance property of $Al_2O_3$-SiC composite against high velocity copper jet was lower than that of PL-8 when SiC particles of approximately 3 $\mu$m diameter was added to. It is caused probably due to the micro-pores made by oxidation of SiC particles. However, in the case of the less-weighted $Al_2O_3$-SiC composite adding to 10 wt% SiC with average diameter of 10 $\mu$m and sintering at 1200$^{\circ}C$, the impact resistance property was improved up to 37 percent compared with that of PL-8.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.493-496
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• 1999

Ni/3C-SiC 옴믹 접합에 대한 미세구조적-접합 특성과의 상관관계를 규명하였다. 3C-SiC 웨이퍼 위에 저저항 전면 옴믹 적합층을 형성하기 위하여 Ni(t=300$\AA$)을 thermal evaporator를 사용하여 증착하고, 50$0^{\circ}C$, 80$0^{\circ}C$, 103$0^{\circ}C$ 온도에서 30분간(Ar 분위기) 열처리 한 후, scratch test를 실행하여 Ni/3C-SiC의 접착력 특성을 조사하였다. 여러 다른 온도에 따른 Ni/3C-SiC 층의 표면과 계면의 미세구조는 X-ray scattering 법을 사용하였다. 50$0^{\circ}C$ 에서 열처리된 Ni/3C-SiC 층은 가장 낮은 계면 평활도와 가장 높은 표면 평활도를 나타내었다. Ni/3C-SiC 접착력 분석에서 500 $^{\circ}C$ 열처리된 시편의 측정된 임계하중 값은 As-deposited 시편(12 N~ 13 N)보다 훨씬 낮은 2 N~3 N 범위의 값을 보였으나, 열처리 온도가 증가함에 따라 다시 높아지는 경향을 보였다. 미세구조 특성에서는 열처리 온도가 500 $^{\circ}C$ 이상에서는 NiSi$_2$silicides의 domain size는 결정성의 향상에 따라 증가되었다. 결정성 향상이 3C-SiC와 silicides 사이의 격자상수의 낮은 불일치를 완화시키는데 기여 하였 다.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.309-314
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• 2003

A spark plasma sintering technique has been used for the fabrication of $Al_2O_3$-SiC nanocomposites at the low temperature of $1100^{\circ}C$∼$1500^{\circ}C$. The sintered $Al_2O_3$-SiC composites shows very homogeneous microstructure without any particular abnormal grain growth, indicating that the addition of nano-sized SiC particles is very effective to control grain growth and to induce the residual stress in the $Al_2O_3$ matrix, resulting in the intragranular fracture. These SiC particles are present in the grain boundaries and also intragrain, depending on the sintering condition, and improve remarkably the mechanical properties of $Al_2O_3$-SiC composite through the mechanisms of strengthening and toughening induced by crack diffraction and crack bridging.