• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.113-113
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on $AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 $ppm/^{\circ}C$ within a temperature range from $25^{\circ}C$ to $50^{\circ}C$ and -1040 $ppm/^{\circ}C$ at $500^{\circ}C$. The micro heater generates the heat about $500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1102-1107
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• 1999

SiC-Si3N4 composites were prepared by mixing $\alpha$-Si3N4 powder to $\alpha$-SiC powder in the range of 10 to 30 vol% with 10vol% interval. 6wg% Al2O3 and 6wt% Y2O3 were respectively added as sintering aids. Hot pressing was performed at 1,80$0^{\circ}C$ for 1 hour with 25 MPa pressure. In the case of adding 20vol% of $\alpha$-Si3N4 powder the relative density to theoretical value and the flexural strength were 99.1% and 34,420 MPa respectively and the worn amount was 2.09$\times$10-3 mm2 which were the highest values in the all range of he composition. Although the composite containig 10 vol% of $\alpha$-Si3N4 powder showed the highest fracture toughness(KIC) of 4.65MN/m3/2 the reduction of the wear resistance in this composite is likely to be affected by the homogeneity and the uniformity of the grain coalescence and growth during the sintering process.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.649-654
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• 2004

In this paper, the fracture toughness and mechanisms of failure in a random SiC-whisker/$Al_{2}O_3$ ceramic composite were investigated using in situ observations during mode I(opening) loading. $SiC_{w}/Al_{2}O_3$ composite was obtained by hot press sintering of $Al_{2}O_3$ powder and SiC whisker as the matrix and reinforcement, respectively. The whisker and powder were mixed using a turbo mill. The composite was produced at SiC whisker volume fraction of $0.3\%$. Compared with monolithic $Al_{2}O_3$, fracture toughness enhancement was observed in $SiC_{w}/Al_{2}O_3$ composite. This improved fracture toughness was attributed to SiC whisker bridging and crack deflection. $SiC_{w}/Al_{2}O_3$ composite exhibited typically brittle fracture behavior, but a fracture process zone was observed in this composite. This means that the load versus load-line displacement curve of $SiC_{w}/Al_{2}O_3$ composite from a fracture test may involve a small non-linear region near the peak load.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.735-738
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.432-443
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• 1999

The self-toughened Si3N4 ceramics where needle-like coarse ${\beta}$-Si3N4 grains were dispersed within fine-grain-ed matrix were prepared via hot-prssing at 1730$^{\circ}C$ for 2 h using 5 vol% ${\beta}$-Si3N4 whiskers as a seed. In this study the microstructures and mechanical properties of self-toughened Si3N4 ceramics were investigated. The flexural strength of self-toughened Si3N4 ceramics was increased from 600-800 MPa of the Si3N4 monolith to 830-1025 MPa. The KIC was also increased from 4.0-5.0MPa$.$m1/2 of the Si3N4 monolith to 5.8-6.5MPa$.$m1/2$.$The needle-like coarse Si3N4 grains in self-toughened ceramics were considered to induce various toughening mechanisms including the crack deflection pull-out and bridging and to contribute to KIC improvement. In ad-dition to toughening mechanisms the KIC improvement was considered to be partially indebted also to the orien-tation of large ${\beta}$-Si3N4 grains and to the promoting effect of ${\beta}$-Si3N4 whiskers on the ${\alpha}$ to ${\beta}$ transtion.

• Membrane Journal
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• v.25 no.2
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• pp.115-122
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• 2015

$SiO_2{\cdot}B_2O_3$ was prepared by trimethylborate (TMB)/tetraethylorthosilicate (TEOS) mole ratio 0.01 at $800^{\circ}C$. PDMS[poly(dimethysiloxane)]-$SiO_2{\cdot}B_2O_3$ composite membranes were prepared by adding porous $SiO_2{\cdot}B_2O_3$ to PDMS. To investigate the characteristics of PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane, we observed PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane using TG-DTA, FT-IR, BET, X-ray, and SEM. PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was studied on the permeabilities of $H_2$ and $N_2$ and the selectivity ($H_2/N_2$). Following the results of TG-DTA, BET, X-ray, FT-IR, $SiO_2{\cdot}B_2O_3$ was the amorphous porous $SiO_2{\cdot}B_2O_3$ with $247.6868m^2/g$ surface area and $37.7821{\AA}$ the mean of pore diameter. According to the TGA measurements, the thermal stability of PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was enhanced by inserting $SiO_2{\cdot}B_2O_3$. SEM observation showed that the size of dispersed $SiO_2{\cdot}B_2O_3$ in the PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was about $1{\mu}m$. The increasing of $SiO_2{\cdot}B_2O_3$ content in PDMS leaded the following results in the gas permeation experiment: the permeability of both $H_2$ and $N_2$ was increased, and the permeability of $H_2$ was higher than $N_2$, but the selectivity($H_2/N_2$) was decreased.

• Journal of Korea Foundry Society
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• v.42 no.5
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• pp.273-281
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• 2022

In order to understand the solidification behavior and microstructural evolution of the Al-Cu-Si ternary eutectic alloy system, changes of the microstructure of the Al-Cu-Si ternary eutectic alloy with different cooling rates were investigated. When the mold preheating temperature is 500℃, primary Si and Al2Cu dendrites are observed, with (α-Al+Al2Cu) binary eutectic and needle-shaped Si subsequently observed. In addition, even when the mold preheating temperature is 300℃, primary Si and Al2Cu dendrites can be observed, and both (α-Al+Al2Cu+Si) areas observed and areas not observed earlier appear. When the mold preheating temperature is 150℃, bimodal structures of the binary eutectic (α-Al+Al2Cu) and ternary eutectic (α-Al+Al2Cu+Si) are observed. When the preheating temperature of the mold is changed to 500℃, 300℃, and 150℃, the greatest change is in the Si phase, and upon reaching the critical cooling rate, the ternary eutectic of (α-Al+Al2Cu+Si) forms. If the growth of the Si phase is suppressed upon the formation of (α-Al+Al2Cu+Si), the growth of both Al and Cu is also suppressed by a cooperative growth mechanism. As a result of analyzing the Al-27wt%Cu-5wt%Si ternary eutectic alloy with a different alloy design simulation programs, it was confirmed that different results arose depending on the program. A computer simulation of the alloy design is a useful tool to reduce the trial and error process in alloy design, but this effort must be accompanied by a task that increases reliability and allows a comparison to microstructural results derived through actual casting.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.152-156
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• 1996

Fine (~0.09 $\mu$m) $\beta$-SiC Powders with 3.3wt% of large (~0.44$\mu$m) $\alpha$-SiC of $\beta$-SiC particles (seeds) added were hotpressed at 175$0^{\circ}C$ using $Y_2O_3$, $Al_2O_3$ and CaO as sintering aids and then annealed at 185$0^{\circ}C$ for 4 h to enhance grain growth. The resultant microstructure and polytypes were analyzed by high resolution electron microscopy (HREM).Growth of $\beta$-SiC with high density of microtwins and formation of ${\alpha}/{\beta}$ composite grains consisting of $\alpha$-SiC domain sandwiched between $\beta$-SiC domains were found in both specimens. When large $\alpha$-SiC (mostly 6H) seeds were added, the $\beta$-SiC transformend preferentially to the 6H polytype. In contrast, when large $\beta$-SiC (3C) seeds were added, the fine $\beta$-SiC transformed preferentially to the 4H polytype. Such results suggested that the polytype formation in SiC was influenced by crystalline form of seeds added as well as the chemistry of sintering aids. The ${\alpha}/{\beta}$ interface played and important role in the formation of elongated grains as evidenced by presence of ${\alpha}/{\beta}$ composite grains with high aspect ratio.

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1261-1265
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• 1999

Effect of SiC particle size of the densification of Al2O3-SiC composite during pressureless sintering was investigated. Two types of SiC powders having average particle size of 0.15${\mu}{\textrm}{m}$ and 3${\mu}{\textrm}{m}$ were used. Densification rate of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was slower than that of the specimen containg 3${\mu}{\textrm}{m}$ SiC particles. Although the relative density of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was below 90% of theoretical density after sintering at 155$0^{\circ}C$ the complete closure of open pores occurred. Therefore full densification could be obtained by subsequent HIP. On the other hand in the specimen containing 3${\mu}{\textrm}{m}$ SiC particles the complete closed pore was observed at 95% of theoretical density. Such a fast pore closure in the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles is likely to occur as a result of dense reaction layer formation on the specimen surface which is attributed to the high reactivity of small size particles with sintering atmosphere.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.709-713
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• 2018

To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.