• Tribology and Lubricants
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• 제9권2호
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• pp.63-69
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• 1993

The wear properties of two types of $Si_3N_4$(silicon nitride) exposed to high and low humidity were examined experimentally for various sliding speed. Bearing steel was used as the disk material at pin-on-disk type sliding. Wear rates of pressureless sintered-plus-hot-isostatic pressed Si3N4 were slightly lower than those of pressureless sintered $Si_3N_4$. It was observed that adsorbed moisture and sliding speed markedly influenced the wear properties of $Si_3N_4$. The highest wear rate was obtained under the high humidity and low sliding speed condition. As the sliding speed was increased, wear rates were decreased and the humidity effect on the wear rates of $Si_3N_4$ was lowered. The result that the $Si_3N_4$ pin showed a high wear rate under the high humidity condition was explained by the property change due to the adsorbed moisture, plowing action by the hard particles of $Fe_2O_3$ from the disk, and the corrosion effect at $Si_3N_4$ surface. Increase in sliding speed was supposed to have reduced the humidity effect on wear rate of $Si_3N_4$ by raising the temperature of both the bearing steel disk and $Si_3N_4$ pin specimen.

• 한국진공학회지
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• 제6권2호
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• pp.165-171
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• 1997

Pd금속을 9$\AA$보다 많은 양을 Si표면에 증착한 경우에 형성되는 Pd-실리사이드는 순 수한 Pd금속이 쌓이기 전단계인 Pd양이 많은 $Pd_3Si$상이다. 또한, Si표면에 Pd금속을 1$\AA$이 상을 증착 하였을 때 형성되는 Pd-실리사이드는 $Pd_2Si$상이다. 그리고, Si표면에 Pd금속을 1 $\AA$보다 작은 양을 증착한 Pd 3d 내각준위의 분광을 보면, Pd의 증착 두께가 얇아질수록 Pd 3d 내각준위의 반높이에서 반너비(half width at half maximum:HWHM)의 크기가 넓어진 다. 매우 작은 양의 Pd금속을 Si표면에 증착한 경우에 반너비가 넓어진 이유는 많은 연구자 들이 찾아낸 Pd-실리사이드인 $Pd_2Si$상외에 Si양이 많은 새로운 Pd-실리사이드인 PdSi상이 존재하는 것 때문이다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.464-468
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• 2003

The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

• 한국재료학회지
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• 제7권7호
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• pp.587-591
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• 1997

RBS와 XRD를 이용하여 C o-Nb이중층 실리사이드와 구리 배선층간의 열적안정성에 관하여 조사하였다. Cu$_{3}$Si등의 구리 실리사이드는 열처리시 40$0^{\circ}C$정도에서 처음 형성되기 시작하였는데, 이 때 형성되는 구리 실리사이드는 기판의 상부에 존재하던 준안정한 CoSi의 분해시에 발생한 Si원자와의 반응에 의한 것이다. 한편, $600^{\circ}C$에서의 열처리 후에는 CoSi$_{2}$층을 확산.통과한 Cu원자와 기판 Si와의 반응에 의하여 CoSi$_{2}$/Si계면에도 구리 실리사이드가 성장하였는데, 이렇게 구리 실리사이드가 CoSi$_{2}$/Si 계면에 형성되는 것은 Cu원자의 확산속도가 여러 중간층에서 Si 원자의 확산속도 보다 더 빠르기 때문이다. 열처리 결과 최종적으로 얻어진 층구조는 CuNbO$_{3}$/Cu$_{3}$Si/Co-Nb합금층/Nb$_{2}$O$_{5}$CoSi$_{2}$/Cu$_{3}$Si/Si이었다. 여기서 상부에 형성된 CuNbO$_{3}$는 Cu원자가 Nb$_{2}$O$_{5}$및 Co-Nb합금층과 반응하여 기지조직의 입계에 석출되어 형성된 것이다.

• Molecules and Cells
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• 제24권2호
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• pp.247-254
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• 2007

Improvement in the pharmacokinetic properties of short interfering RNAs (siRNAs) is a prerequisite for the therapeutic application of RNA interference technology. When injected into mice as unmodified siRNAs complexed to DOTAP/Chol-based cationic liposomes, all 12 tested siRNA duplexes caused a strong induction of cytokines including interferon ${\alpha}$, indicating that the immune activation by siRNA duplexes is independent of sequence context. When modified by various combinations of 2'-OMe, 2'-F, and phosphorothioate substitutions, introduction of as little as three 2'-OMe substitutions into the sense strand was sufficient to suppress immune activation by siRNA duplexes, whereas the same modifications were much less efficient at inhibiting the immune response of single stranded siRNAs. It is unlikely that Toll-like receptor 3 (TLR3) signaling is involved in immune stimulation by siRNA/liposome complexes since potent immune activation by ds siRNAs was induced in TLR3 knockout mice. Together, our results indicate that chemical modification of siRNA provides an effective means to avoid unwanted immune activation by therapeutic siRNAs. This improvement in the in vivo properties of siRNAs should greatly facilitate successful development of siRNA therapeutics.

• 한국세라믹학회지
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• 제41권3호
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• pp.235-242
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• 2004

원재료로서 Si, NH$_4$Cl, NaN$_3$, NaCl을 사용하고 SHS법을 이용하여 $\alpha$-Si$_3$N$_4$ 분말을 제조하였다. NH$_4$Cl과 NaN$_3$는 첨가제로서, NaCl은 희석제로서 사용되었고 반응기내 최초 $N_2$ 압력은 60 atm이었다. $\alpha$-Si$_3$N$_4$분말을 제조함에 있어, 첨가제의 종류와 조성, 희석제의 첨가량에 따른 반응성 및 생성물의 특성을 조사하였는데, 우선 $\alpha$-Si$_3$N$_4$ 분말의 제조를 위한 최적의 반응계를 조사하였고, 최적의 반응계에서 최적의 조성을 확립하였다. 최적의 반응계는 Si-$N_2$-additive(NH$_4$C+NaN$_3$)-diluent(NaCl)이었고, 이때 최적의 조성은 38wt%Si+22.5wt%NH$_4$Cl+27.5wt%NaN$_3$+l2wt%NaCl이었다. 이 조건에서 생성된 최고 $\alpha$-Si$_3$N$_4$의 분율은 96.5wt%이었으며 생성된 분말의 입형은 길이가 약 10 $mu extrm{m}$이고 직경이 약 1 $\mu\textrm{m}$인 일방향으로 길게 성장한 부정형의 fiber 형태였다.

• 한국세라믹학회지
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• 제54권4호
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• pp.340-348
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• 2017

$SiC_f/SiC$ composites were joined using a $60{\mu}m-thick$ $Ti_3AlC_2$ or $Ti_3SiC_2$ MAX phase tape. The filler tape was inserted between the $SiC_f/SiC$ composites containing a 12 wt.% $Al_2O_3-Y_2O_3$ sintering additive. The joining was performed to a butt-joint configuration at $1600^{\circ}C$ or $1750^{\circ}C$ in an Ar atmosphere by applying 3.5 MPa using a hot press. Microstructural and phase analyses at the joining interface confirmed the decomposition of $Ti_3AlC_2$ and $Ti_3SiC_2$, indicating the joining by solid-state diffusion. The results showed sound joining interface without the presence of cracks. Joining strengths higher than 150 MPa could be obtained for the joints using $Ti_3AlC_2$ or $Ti_3SiC_2$ at $1750^{\circ}C$, while those for joined at $1600^{\circ}C$ decreased to 100 MPa approximately without the deformation of the joining bodies. The thickness of initial filler tape was reduced significantly after joining because of the decomposition and migration of MAX phase owing to the plasticity at high temperatures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.493-498
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• 2008

This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.