• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Bulletin of the Korean Chemical Society
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• v.20 no.4
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• pp.422-426
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• 1999

The Grignard reactions of bis(chloromethyl)dimethylsilane (1) with trimethylchlorosilane (2) in THF give both the intermolecular C-Si coupling and intramolecular C-C coupling products. At beginning stage, 1 reacts with Mg to give the mono-Grignard reagent ClCH2Me2SiCH2MgCl (1) which undergoes the C-Si coupling reaction to give MC2Si(CH2SiMe3)2 3, or C-C coupling to a mixture of formula Me3SiCH2(SiMe2CH2CH2)nR1 (n = 1, 2, 3, ..; 4a, R1I = H: 4b, R1 = SiMe3). In the reaction, two reaction pathways are involved: a) Ⅰ reacts with 2 to give Me3SiCH2SiMe2CH2Cl 6 which further reacts with Mg to afford a Me2SiCH2Mel-SiCH2MgCl (Ⅱ) or b) I cyclizes intramolecularly to a silacyclopropane intermediate A, which undergoes a ring-opening polymerization by the nucleophilic attack of the intermediates I or Ⅱ, followed by the termination reaction with H2O and 2, to give 4a and 4b, respectively. As the mole ratio of 2/1 increased from 2 to 16 folds, the formation of product 3 increased from 16% to 47% while the formation of polymeric products 4 was reduced from 60% to 40%. The intermolecular C-Si coupling reaction of the pathway a becomes more favorable than the intramolecular C-C coupling reaction of the pathways b at the higher mole ratio of 2/1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.11
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• pp.957-962
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• 2008

Crack-healing behavior of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and amount of additive $SiO_2$ colloidal. Results showed that optimum amount of additive $SiO_2$ colloidal and coating of $SiO_2$ colloidal on crack could significantly increase the bending strength. The heat-treatment temperature has a profound influence on the extent of crack healing and the degree of strength recovery. The optimum heat-treatment temperature depends on the amount of additive $SiO_2$ colloidal. Crack healing strength was far the better cracked specimen with $SiO_2$ colloidal coating on crack surface. After heat treatment at the temperature 1,273 K in air, the crack morphology almost entirely disappeared by scanning prob microscope. At optimum healing temperature 1,273 K, the bending strength with additive $SiO_2$ colloidal 0.0 wt.% without $SiO_2$ colloidal coating recovered to the value of the smooth specimens at room temperature for the investigated crack sizes $100\;{\mu}m$. But that with $SiO_2$ colloidal coating increase up to 140 %. The amount of optimum additive $SiO_2$ colloidal was 1.3 wt.% and crack healed bending strength with $SiO_2$ colloidal coating increase up to 160 % to smooth specimen of additive $SiO_2$ colloidal 0.0 wt.%. Crack closure and rebonding of the crack due to oxidation of cracked surfaces were suggested as a dominant healing mechanism operating in $Si_3N_4$ composite ceramics.

• Journal of Korean Ophthalmic Optics Society
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• v.8 no.2
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• pp.111-117
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• 2003

We collected the domestic and foreign half-mirror coating lens for sunglasses. Their reflectance is measured using Spectrophotometer in order to analysis their optical property and the result which is calculated using Macleod program was compared with measured reflectance. In addition, we designed the new half-mirror coating lens with gold color using TiN material and investigated the optical property of the new half-mirror coating lens. The results obtained from analysis of half-mirror coating lenses are as follow : Two-tone half-mirror coating with silver color is fabricated with [air|$SiO_2$(or $Al_2O_3$)|Cr|glass]. The role of $SiO_2$(or $Al_2O_3$) on Cr improve the hardness of the lens and the thickness of the $Al_2O_3$ with 10 nm is good to show the lens silver color. Incase of color half-mirror coating lens. Blue system is designed by [air|$SiO_2$(66.3)|$TiO_2$(129.0)|$SiO_2$(62.9)|$SiO_2$(26.0)|$TiO_2$(120.3)|$SiO_2$(9.1)|glass], gold system [air|$SiO_2$(60.6)|$TiO_2$(86.2)|$SiO_2$(13.5)|$TiO_2$(86.8)|$SiO_2$(214.38)|glass], green system[air|$SiO_2$(74.3)|$TiO_2$(75.8)|$SiO_2$(44.3)|$TiO_2$(11.6)|$SiO_2$(160.8)|$TiO_2$(12.9)|$SiO_2$(183.3)|$TiO_2$(143.8)|glass], silver system[air|$SiO_2$(21.2)|$TiO_2$(49.7)|$SiO_2$(149.3)|glass]. White half-mirror coating lens has [air|$SiO_2$(17 nm)|$TiO_2$(43 nm)(or $ZrO_2$)|$SiO_2$(87 nm)|polysiloxane($4.46{\mu}m$|glass or CR-19]. It has half-mirror coaling lens which has about 19% reflectance and about 80% transmittance in the range of visible light(400~700nm). we designed the new half-mirror coating lens with gold color, the (x, y) value of the CIE is almost similar to the CIE value of [air|$SiO_2$(170 nm)|TiN(15 nm)|glass].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.17-21
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• 2009

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated for nonvolatile memory device applications. The band structure of band-gap engineered tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with the conventional tunneling $SiO_2$ barrier. The band-gap engineered tunneling barriers composed of thin $SiO_2$ and $Si_3N_4$ layers showed a lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.47-51
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• 1997

The dense sintered bodies of Si/SiC composite with various Si contents could be fabricated by changing the green density in the forming process. The Si/SiC/graphite composites with various graphite contents could be also fabricated by changing a graphite content in the starting composition. Their mechanical and tribological properties were characterized and wear mechanism was also studided. The hardness and strength of the Si/SiC and the Si/SiC/graphite were decreased with increasing the contents of free Si and graphite, respectively. However, the friction coefficient and specific wear rate had no specific relations to their hardness and strength. Adhesion of free Si was a main factor to determine a wear resistance of the Si/SiC composite. In the case of the Si/SiC/graphite, solid lubricationl and liquid reservoir of the graphite particles played the main role of the reduction of the friction force. In the torque test to estimate the possibility of practical of practical applications, the value of torque between the Al2O3 disk and Si/SiC/graphite disk was 1/6 lower compared with two $Al_2O_3$ disks on the basis of 100,000 cycles.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.381-387
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• 1993

The silicon oxynitride bonded $Si_3N_4-BN$ composite has been developed based on the selective oxidation behavier of $Si_3N_4$ over BN. The silicon oxynitride phase converted to the reaction between $Si_3N_4$ and $SiO_2$ formed on $Si_3N_4$ powder surface during oxidation treatment at the sintering temperature. The developed composite has excellent high-temperature strength, thermal shock resistance, precision machinability and corrosion resistance to the molten steel. The developed composite may therefore be used as, for example, break ring materials in continuous casting of steel.

• Journal of Powder Materials
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• v.7 no.1
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• pp.35-41
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• 2000

Al2O3$.$SiC particle was prepared was prepared by the self-propagting high temperature sYthesis(SHS) process from a mixture of SiO2, Al and C powders, The fabricated Al2O3$.$SiC particle was applied to 2024Al/(Al2O3$.$SiC)pcomposite as a reinforcement. Aluminum matix composites were fabricares by the powder extrusion method using the synthesized Al2O3$.$SiC particle and commercial 2024Al powder. Theoptimum preparation conditions for Al2O3$.$SiC partticle by SHS process were described. The influence of the Al2O3$.$SiC voiume fraction on the mechanical was composite was also discussed. Despite adiabatic temperature was about 2367K, SHs reaction was completed not by itself, but by using pre-heating. Mean particle size of final particle synthesized was 0.73 ${\mu}$m and most of the particle was smaller than 2${\mu}$m. Elastic modulus and tensile strength of the composite increased with increase the volume fraction of reinforcement but, tensile strength depreciated at 30 vol% of reinforcement.