• Journal of the Korea Institute of Military Science and Technology
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• v.21 no.6
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• pp.760-766
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• 2018

The present study investigates the effect of PMMA and BN content on microstructure, mechanical and dielectric properties of silicon nitride($Si_3N_4$) ceramics in $Y_2O_3-Al_2O_3$ additive system. The total additive content was fixed at 8 wt.% and the amount of PMMA varies from 0 to 40 wt.% and BN varies from 0 to 36 wt.%, respectively. The crystalline phases of the samples were determined by X-ray diffraction analysis. All the sintered sample shows complete transformation of ${\alpha}$ to ${\beta}-Si_3N_4$ during the sintering process indicated that the phase transformation was unaffected by the PMMA or BN content. However, the microstructure shows that the residual porosity increased with increasing PMMA and BN content. In addition, the flexural strength and the dielectric constant decrease with addition of PMMA and BN due to the residual porosity. This article provides empirical study of design parameters for $Si_3N_4$-based radome materials.

• Journal of IKEEE
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• v.22 no.4
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• pp.1230-1233
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• 2018

$Al_2O_3$ films with the thickness of 50 nm were fabricated on 4H-SiC by aerosol deposition, and their electrical properties were characterized with different post annealing conditions. As a result, the $Al_2O_3$ film annealed in $N_2$ atmosphere showed decreased fixed charge density at the interface area between the $Al_2O_3$ and SiC, and increased leakage currents due to the generation of oxygen vacancies. From this result, it was confirmed that proper $N_2$ and $O_2$ ratio for the post annealing process is important.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1259-1264
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• 1994

$\beta$-Sialon has been regarded as one of promising materials showing high strength, fracture toughness, corrosion resistence and wear resistence. The improvement of the fracture toughness and tribological properties of $\beta$-Sialon (Z=1) has been attempeted by fabricating the $\beta$-Sialon/ SiC whisker composite. Each of green body composed of following ingredients, i.e., Si3N4, AlN, Y2O3 nd SiC, respectively, was first fired at 178$0^{\circ}C$ for 3hrs in N2 atmosphere and then post-HIPed at 173$0^{\circ}C$ for 1 hr under 170 MPa for N2 gas pressure. The fracture toughness, flexural strength and tribological properties increased with increasing SiC whisker content, despite the reduction of the relative density and hardness. $\beta$-Sialon/15 vol% SiC whisker showed a significant enhancement of wear resistance compared to the monolithic $\beta$-Sialon. The addition of SiC whisker caused the reduction of the density and hardness, but induced the increment of wear resistance.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.46-54
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• 1998

A planar Bi-Sb multijunction thermal converter, which is consisted of a linear or bifilar thin film NiCr-heater and a thin film Bi-Sb thermopile, has been fabricated, and its ac-dc transfer characteristics were examined in a frequency range from 10 Hz to 10 KHz. In order to increase the thermal sensitivity and to decrease the ac-dc transfer error of a thermal converter, the heater and the hot junctions of a thermopile were prepared on a Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-diaphragm which acts as a thermal isolation layer, and the cold junctions on the Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-thin film supported with the silicon rim which functions as a heat sink. The respective thermal sensitivities in air and in a vacuum of the converter with a built-in bifilar heater were about 14.0 ㎷/㎽ and 54.0 ㎷/㎽, and the ac-dc voltage and the current transfer difference ranges in air were about $\pm$0.60 ppm and $\pm$0.11 ppm, respectively, indicating that the ac-dc transfer accuracy of the converter are much higher than that of a commercial 3-dimensional multijunction thermal converter. However, the output thermoelectric voltage fluctuation of the converter was rather high.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.206-207
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• 2009

PECVD를 이용하여 상온에서 Silicon nitride 박막을 제조하였다. 그리고 증착 중에 non-invasive ion energy analyzer를 이용하여 이온에너지와 이온에너지 flux룰 측정하였다. PECVD의 소스 파워는 500W, 바이어스 파워 100W으로 고정하고 주파수 250Hz으로 고정된 상태에서 펄스를 인가하여 duty ratio를 30-100%까지 변화시켰다. 작은 duty ratio 범위 (30-70%)에서 duty ratio가 감소할 때, 이온에너지와 이온에너지의 비가 감소하였다. 이 때 감소되는 굴절률은 저이온에너지 변수와 강한 연관성을 지니고 있었다. 굴절률은 1.65-2.46 사이에서 변화하였다.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.41-47
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• 2020

The effect of Co interlayer on the interfacial reliability of SiN_x/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiN_x/Cu thin film structure was 0.90 J/㎡. This value of the SiN_x/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiN_x/Co/Cu structure was around 10 times higher than SiN_x/Cu structure due to CoSi₂ reaction layer formation at SiN_x/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiN_x/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiN_x/Co interface. Therefore, it is required to control the CoO and Co₃O₄ formation during the environmental storage of the SiN_x/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.27-27
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• 2002

[Cp＊Rh(H₂O)₃](OTf)₂ (1) reacts with a stoichiometric amount of A and B [ A = Me₃SiN₃, B = 4,4'-bipridyl, (2a), A = Me₃SiNCO, B = 4,4'-bipridyl (2b)] in acetone at room temperature for 3 h to give the supramolecular complexes [Cp＊₄Rh₄(μ-A)₄(μ-B)₂] [A = Me₃SiN₃, B = 4,4'-bipridyl, (2a), A = Me₃SiNCO, B = 4,4'-bipridyl (2b)]. Complexes 2a and 2b have been structurally characterized by X-ray diffraction.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.21-25
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• 2000

Gas pressure sintered silicon nitride based composites with 5 wt% $\beta$-Si3N4 whiskers were prepared, and the variations depending on sintering additives and sintering temperature were studied. Sintering additives were 6 wt% Y2O3-1 wt% MgO(6Y1M), 6 wt%Y2O3-1 wt% Al2O3(6Y1A), 6 wt% Y2O3-1 wt% SiO2(6Y1S), and whiskers were unidirectionally oriented by a modified tape casting technique. Samples were fully densified by gas pressure sintering at 2148 K and 2273 K. As the sintering temperature increased, the size of large elongated grains was increased. Three point flexural strength of 6Y1M and 6Y1M samples was higher than that of 6Y1S sample, and the strength decreased as the sintering temperature increased. The indentation crack length became shorter for the sample sintered at higher temperature, and the difference between the cracks length parallel to and normal to the direction of whisker alignment was decreased. In case of cracks 45$^{\circ}$off the whisker alignment direction, the crack length anisotropy disappeared.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.11a
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• pp.6-6
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• 1996

Ceramic based nanocomposite, in which nano-sized ceramics and metals were dispersed within matrix grains and/or at grain boundaries, were successfully fabricated in the ceramic/cerarnic and ceramic/metal composite systems such as $Al_2O_3$/SiC, $Al_2O_3$/$Si_3N_4$, MgO/SiC, mullite/SiC, $Si_3N_4/SiC, $Si_3N_4$/B, $Al_2O_3$/W, $Al_2O_3$/Mo, $Al_2O_3$/Ni and $ZrO_2$/Mo systems. In these systems, the ceramiclceramic composites were fabricated from homogeneously mixed powders, powders with thin coatings of the second phases and amorphous precursor composite powders by usual powder metallurgical methods. The ceramiclmetal nanocomposites were prepared by combination of H2 reduction of metal oxides in the early stage of sinterings and usual powder metallurgical processes. The transmission electron microscopic observation for the $Al_2O_3$/SiC nanocomposite indicated that the second phases less than 70nm were mainly located within matrix grains and the larger particles were dispersed at the grain boundaries. The similar observation was also identified for other cerarnic/ceramic and ceramiclmetal nanocornposites. The striking findings in these nanocomposites were that mechanical properties were significantly improved by the nano-sized dispersion from 5 to 10 vol% even at high temperatures. For example, the improvement in hcture strength by 2 to 5 times and in creep resistance by 2 to 4 orders was observed not only for the ceramidceramic nanocomposites but also for the ceramiclmetal nanocomposites with only 5~01%se cond phase. The newly developed silicon nitride/boron nitride nanocomposites, in which nano-sized hexagonal BN particulates with low Young's modulus and fracture strength were dispersed mainly within matrix grains, gave also the strong improvement in fracture strength and thermal shock fracture resistance. In presentation, the process-rnicro/nanostructure-properties relationship will be presented in detail. The special emphasis will be placed on the understanding of the roles of nano-sized dispersions on mechanical properties.