• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.6
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• pp.1753-1761
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• 1996

The wear behaviors of ${Si_3}{N_4}$ under the different sliding conditions were investigated. The cylinder-on-disc wear tester was used. Using the servo-metor, the sliding speed did ot alternate due to the frictional forces. Threekinds of loads and speeds were selected to watch the variation of the wear rates and the frictional forces. Also three kinds of sliding condition under a constant speed were used to see the effects of the oxidationand the abrasion. The contact pressure was more effective than the repeated cycle on the wear behavior of ${Si_3}{N_4}$. With the low loads, the effect of the asperity-failure was more dominant than that of oxidation and abrasion. As increasing the load, the effects of oxidation and abrasion were increased, but the asperity-failure effects were decreased. The wear particles destroyed the ozide layers formed on sliding surfaces. The wear rate could be decreased due to delaying the oxidation. The frictional power and the wear weight per time were usefuel to see the transition of wear.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.659-664
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• 1998

Densification behavior of $Si_3N_4$ ceramics by two step gas pressure sintering was compared with pres-sureless sintering one step gas pressure sintering or hot isostatic pressing. While it was difficult to get the highly interlocked ${\beta}-Si_3N_4$ microstructure during the pressureless sintering due to decomposition above $1800^{\circ}C$ gas pressure sintering could solve this problem by increasing the densification temperature 2MPa of nitrogen pressure was enough to inhibit the decomposition up to $1890^{\circ}C$ and especially two step gas pres-sure sintering applying comparatively low pressure(2MPa) until the closed pore stage and then high pres-sure(10MPa) after pore closure could increase the hardness and the toughness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.1
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• Journal of Powder Materials
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• v.5 no.1
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• pp.15-21
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• 1998

The effect of $\alpha$/$\beta$ phase on the mechanical properties and contact damage of silicon nitrides $Si_3N_4$) was investigated. Silicon nitride materials were prepared from two starting powders, at selective increasing hot-pressing temperatures to coarsen the microstructures: (i) from relatively coarse $\alpha$-phase powder, essentially equiaxed $\alpha$-$Si_3N_4$ grains, with limited, slow transformation to $\beta$-$Si_3N_4$ grain; (ii) from relatively fine $\alpha$-phase powder, a more rapid transformation to $\beta$-$Si_3N_4$, with attendant grain elongation. The resulting micro-structure thereby provided a spectrum of $\alpha$/$\beta$ phase ratios, grain sizes, and grain shapes. Fracture strength, hardness, and toughness were measured, and contact damage and strength degradation after indentation were investigated by Hertzian indentation using spherical indenter. A brittle to ductile transition in $Si_3N_4$ depended on $\alpha$/$\beta$ phase ratio as well as grain size. Silicon nitride with elongated $\beta$ grains showed a superior, contact damage resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.212-212
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• 2012

수소화된 실리콘 질화막은 결정질 태양전지 산업에서 반사방지막 과 패시베이션 층으로 널리 사용되고 있다. 또한, 수소화된 질화막은 금속 소성공정과 같은 높은 공정온도를 거친 후에도 결정질 실리콘 태양전지의 표면층으로서 충족되는 특성들이 변하지 않고 유지되어야 한다. 본 연구에서는 PECVD 장치를 이용한 수소화된 실리콘 질화막의 특성 변화에 대한 경향성을 알아보기 위하여 증착조건의 변수(온도, 증착거리, 무선주파수 전력, 가스비율 등.)들을 다양하게 가변하여 증착조건의 최적화를 찾았다. 이후 수소화된 실리콘 질화막의 전구체가 되는 사일렌(SiH4)과 암모니아(NH3) 가스비를 변화시켜가며 결정질 실리콘 태양전지에 사용되기 위한 박막의 광학 전기 화학적 그리고 표면 패시베이션 특성들을 분석하였다. 가스 비율에 따른 수소화된 실리콘 질화막의 굴절률 범위는 1.90-2.20까지 나타내었다. 결정질 실리콘 태양전지에 사용하기 위한 가장 적합한 특성은 3.6(NH3/SiH4)의 가스비율을 나타내었다. 이를 통하여 PECVD 내에서 구현 할 수 있는 가스의 혼합(SiH4+NH3+N2, SiH4+NH3, SiH4+N2)을 달리하여 박막의 광학적 및 패시베이션 특성을 분석하였다. 이후 $156{\times}156mm$ 대면적 결정질 실리콘 태양전지를 제작하여 SiH4+NH3+N2 의 가스 혼합에서 17.2%의 변환 효율을 나타내었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.122-127
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• 2003

Ti - Si - N hard films were deposited on SKD11 steel substrates by a hybrid deposition system, where TiN was deposited by AIP method while Si was incorporated by sputtering one. The microstructure of Ti-Si-N films was revealed to be a composite of TiN crystallites and amorphous Si3N4 by instrumental analyses. The highest hardness value of about 45 Gpa was obtained at the Si content of around 7.7 at.%. With increase of Si content, the size of TiN crystallites was reduced and their distribution was changed from aligned to randomly orientated states. Surface roughness of Ti-Si-N film also decreased with increase of Si content.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1091-1092
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• 2006

Silicon nitride - silicon carbide composite was developed by using an abrasive SiC powders as a raw material. The composites were prepared by mixing abrasive SiC powder with silicon, pressing and sintering at $1400^{\circ}C$ under nitrogen atmosphere in atmosphere controlled vacuum furnace. The proportion of silicon in the initial mixtures varied from 20 to 50 wt%. After sintering, crystalline phases and microstructure were characterized. All composites consisted of ${\alpha}-Si_3N_4$ and ${\beta}-Si_3N_4$ as the bonding phases in SiC matrix. Their physical and mechanical properties were also determined. It was found that the density of the obtained composites increased with an increase in the $Si_3N_4$ content formed in the reaction.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.35-40
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• 2000

The influence of cyclic loading history on the creep behavior of the 30 vol% hot-pressed $SiC_f/Si_3N_4copmposite was experimentally investigated at $1200^{\circ}C$. The duration of loading/unloading had great effects on the creep behaviors. The short term duration cyclic loading history test results showed significant reduction in the primary and steady-state creep rates. For example, 300sec loading/300sec unloading history resulted in 70% lower steady-state creep rate than that of the continuous loading. However the long term duration cyclic loading history test results showed little change in creep rates compared to those of the continuous one. The reason for the significant change in the short term duration cycles was estimated due to the change in the stress redistribution between the fiber and matrix during the creep recovery in the primary stage.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.174-180
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• 2014

In this study, TiAlSiN coatings have been successfully synthesized on stainless steel and tungsten carbide substrate by a hybrid coating method employing a cathodic arc and a magnetron sputtering source. TiAl and Si target were vaporized with the cathodic arc source and the magnetron sputtering source, respectively. Process gas was the mixture of nitrogen and argon gas. With the increase of Si content, the crystallinity and the grain size of TiAlSiN film was decreased. At the Si content of more than 8 at.%, grain size of TiAlSiN was saturated at around 2 nm. The hardness value of the TiAlSiN film increased with incorporation of Si, and had the maximum value of ~ 3,233 Hv at the Si content of 9.2 at.%. The oxidation resistance of TiAlSiN film was enhanced with the increase of Si content.