Densification of $Si_3N_4$ Cera,ocs by Two Step Gas Pressure Sintering

2단계 가스압 소결에 의한 질화규소의 치밀화

  • 이상호 (쌍용중앙연구소 신소재연구실)
  • Published : 1998.07.01

Abstract

Densification behavior of $Si_3N_4$ ceramics by two step gas pressure sintering was compared with pres-sureless sintering one step gas pressure sintering or hot isostatic pressing. While it was difficult to get the highly interlocked ${\beta}-Si_3N_4$ microstructure during the pressureless sintering due to decomposition above $1800^{\circ}C$ gas pressure sintering could solve this problem by increasing the densification temperature 2MPa of nitrogen pressure was enough to inhibit the decomposition up to $1890^{\circ}C$ and especially two step gas pres-sure sintering applying comparatively low pressure(2MPa) until the closed pore stage and then high pres-sure(10MPa) after pore closure could increase the hardness and the toughness.

구조재료용 요업체로 널리 쓰이는 질화규소 요업체를 2단계 가스압 소결 방식에 의해 치밀화시켰을 때의 효과를 상압조절, 단순 가스압소결 또는 HIP 처리시와 비교하였다. 상압 소결시에는 $1800^{\circ}C$ 이상에서 분해가 일어나지만 질소 가스에 의한 가스압 소결시에는 소결 온도를 더 높일 수 있어서 ${\beta}-Si_3N_4$ 침상 조직의 발달을 이룰 수 있었다. 질소 가스압이 2MPa 정도이면 $1890^{\circ}C$까지도 상압소결시에 비해 분해가 현저히 억제될 수 있어서, 폐기공이 형성될 수 있는 단계까지는 분해만 억제시킬 수 있는 정도의 비교적 낮은 압력으로 치밀화시키고, 이어서 10MPa의 높은 압력을 가하는 소위 2단계 가스압 소결시 경도와 인성이 증진되는 것을 확인할 수 있었다.

Keywords

References

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