• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.4
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• pp.23-29
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• 2004

In this study, four kinds of $Si_3N_4$-based ceramic cutting tools with different sintering time were fabricated to investigate the relation among mechanical properties, grain size and tool life. They were used to turn gray cast iron at a cutting speed of 330m/min and depth of cut of 0.5mm and 1mm in dry, continuos cutting conditions. Multiple linear regression model was used to determine the relations among the mechanical property, grain size and the density. It was found that the combination of hardness and fracture toughness showed a good relation with tool life. It was also shown that hardness was the most important single element for the tool life.

• Journal of the Korean Chemical Society
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• v.38 no.8
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• pp.570-575
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• 1994

The metallation of $\alpha$-methylpyridine 1(a∼f) with n-BuLi produced $\alpha-methylenylpyridinium$ salt 3(a∼f) by elimination of butane. The trapping reactions of 3(a∼f) with $Me_3SiCl\;and\;Me_2SiClCH(SiMe_3)CH_2tBu$ produced only 4(a∼f) and 5(a∼f). The $\alpha$-hydrogen atom of silylated methylene group in 4(a∼f) is more reactive than unreacted $CH_3$ of 4(a∼f) itself and 1(a∼f) toward n-BuLi at low temperature in pentane medium.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.201-205
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• 2002

The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and ＋90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

• Laser Solutions
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• v.9 no.2
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• pp.23-30
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• 2006

Silicon Nitride $(Si_3N_4)$, which is widely used in a variety of applications, is hard-to-machine due to its high hardness. At high temperature (e.g. above $1000^{\circ}C)$, however, the machinability can be greatly improved. In this work, we used a $CO_2$ laser with a high absorptivity to $Si_3N_4$ of 0.9 to locally heat the surface of a rotating $Si_3N_4$ rod on a lathe. In order to examine the effects of the laser-assisted heating on hardness, an $Si_3N_4$ rod is heated to temperatures from 900 to $1800^{\circ}C$ and is rotated at speeds from 440-900 rpm in experiments. When the rod is naturally cooled to room temperature, we measured the Vickers hardness (Hv); and observed the surface of HAZ using a scanning electron microscopy (SEM). Energy dispersive spectroscopy (EDS) was used for ingredient analysis. Results showed that when heated at $1600^{\circ}C$, the hardness of $Si_3N_4$ decreased from 1500 Hv to 1000 Hv. Also, in order to predict the depth of HAZ, we numerically analyzed the laser-assisted heating of $Si_3N_4$.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.16-24
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• 2006

Silicon Nitride ($Si_3N_4$), which is widely used in a variety of applications, is hard-to-machine due to its high hardness. At high temperature (e.g. above $1000^{\circ}C$), however, the machinability can be greatly improved. In this work, we used a $CO_2$ laser with a high absorptivity to $Si_3N_4$ of 0.9 to locally heat the surface of a rotating $Si_3N_4$ rod on a lathe. In order to examine the effects of the laser-assisted heating on hardness, an $Si_3N_4$ md is heated to temperatures from 900 to $1800^{\circ}C$ and is rotated at speeds from 440-900 rpm in experiments. When the rod is naturally cooled to room temperature, we measured the Victors hardness (Hv): and observed the surface of HAZ using a scanning electron microscopy (SEM). Energy dispersive spectroscopy(EDS) was used for ingredient analysis. Results showed that when heated at $1600^{\circ}C$, the hardness of $Si_3N_4$ decreased from 1500 Hv to 1000 Hv. Also, in order to predict the depth of HAZ, we numerically analyzed the laser-assisted heating of $Si_3N_4$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.155-155
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• 2012

기존의 플로팅 타입의 비휘발성 메모리 소자는 스케일 법칙에 따른 인접 셀 간의 간섭현상과 높은 동작 전압에 의한 누설전류가 증가하는 문제가 발생을 하게 된다. 이를 해결하고자 SONOS (Si/SiO2/Si3N4/SiO2/Si) 구조를 가지는 전하트랩 타입의 비휘발성 메모리 소자가 제안되었다. 하지만 터널링 베리어의 두께에 따라서 쓰기/지우기 특성은 향상이 되지만 전하 보존특성은 열화가 되는 trad-off 특성을 가지며, 또한 쓰기/지우기 반복 특성에 따라 누설전류가 증가하게 되는 현상을 보인다. 이러한 특성을 향상 시키고자 많은 연구가 진행이 되고 있으며, 특히 엔지니어드 터널베리어에 대한 연구가 주목을 받고 있다. 비휘발성 메모리에 대한 엔지니어드 기술은 각 베리어; 터널, 트랩 그리고 블로킹 층에 대해서 단일 층이 아닌 다층의 베리어를 적층을 하여 유전율, 밴드갭 그리고 두께를 고려하여 말 그대로 엔지니어링 하는 것을 뜻한다. 그 결과 보다 효과적으로 기판으로부터 전자와 홀이 트랩 층으로 주입이 되고, 동시에 다층을 적층하므로 물리적인 두께를 두껍게 형성할 수가 있고 그 결과 전하 보전 특성 또한 우수하게 된다. 본 연구는 터널링 베리어에 대한 엔지니어드 기술로써, Si3N4를 기반으로 하고 높은 유전율과 낮은 뉴설전류 특성을 보이는 ZrO2을 두 번째 층으로 하는 엔지니어드 터널베리어 메모리 소자를 제작 하여 메모리 특성을 확인 하였으며, 또한 Si3N4/ZrO2의 터널베리어의 터널링 특성과 전하 트랩특성을 온도에 따라서 특성 분석을 하였다.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.508-512
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• 2002

$2000{\AA}-SiO_2/Si(100)$ and $560{\AA}-Si_3N_4/Si(100)$ wafers, which are 10 cm in diameter, were directly bonded using a rapid thermal annealing method. We fixed the anneal time of 30 second and varied the anneal temperatures from 600 to $1200^{\circ}C$. The bond strength of bonded wafer pairs at given anneal temperature were evaluated by a razor blade crack opening method and a four-point bonding method, respectively. The results clearly slow that the four-point bending method is more suitable for evaluating the small bond strength of 80~430 mJ/$\m^2$ compared to the razor blade crack opening method, which shows no anneal temperature dependence in small bond strength.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.357-366
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• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.167-167
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.158-158
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• 1992