• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.836-839
• /
• 2001

Ba(Zr$_{x}$Ti$_{l-x}$)O$_3$(BZT) thin films of x=0.2 and 150nm thickness were prepared on Pt/SiO$_2$/Si substrate by RF Magnetron Sputtering deposition at several temperature (40$0^{\circ}C$, 50$0^{\circ}C$, $600^{\circ}C$). As the substrates temperature increase, crystallization of the films and high dielectric constants can be obtained. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature, and the film's breakdown voltage is higher in low temperature.ure.

• 한국진공학회지
• /
• 제16권3호
• /
• pp.205-209
• /
• 2007

Atomic layer deposition(ALD)를 이용하여 Si와 soda lime glass 기판 위에 ZnO 박막을 증착하였다. 기판의 온도는 비교적 저온인 $130^{\circ}C{\sim}150^{\circ}C$를 채택하였다. 증착결과 단위 cycle 당 $2.72{\AA}$이 증착되어 균일한 박막이 증착되었음이 확인되었다. 증착된 박막의 결정성을 X-ray diffraction(XRD)으로 조사해본 결과 비교적 저온에서도 (100)과 (101)방향의 성장이 우세하였다. 또 Auger electron spectroscopy(AES)로 분석해본 결과 불순물이 없는 순도 높은 박막이 성장되었음을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.44-47
• /
• 2004

Fabrication of barrier layer on PES substrate and plastic OLED device by atomic layer deposition are carried out. Simultaneous deposition of 30nm of $AlO_x$ film on both sides of PES gives film MOCON value of 0.0615g/$m^2$.day (@38$^{\circ}C$, 100% R.H). Introduction of conformal $AlO_x$ film by ALD resulted in enhanced barrier properties for inorganic double layered film including PECVO $SiN_x$. Preliminary life time to 91% of initial luminance (1300 cd/$m^2$ ) for 100nm of PECVD $SiN_x$/30nm of ALD $AlO_x$ coated plastic OLED device was 260 hours.

• 한국전기전자재료학회논문지
• /
• 제19권8호
• /
• pp.732-736
• /
• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• 한국전기전자재료학회논문지
• /
• 제12권1호
• /
• pp.62-68
• /
• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권2호
• /
• pp.132-137
• /
• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 한국결정성장학회지
• /
• 제17권5호
• /
• pp.187-191
• /
• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.818-821
• /
• 2006

We demonstrate the vertical alignment of liquid crystal on $a-SiO_x$ film surface using the ion beam exposure. Liquid crystal can be aligned vertically by the rotational oblique evaporation of $a-SiO_x$ film. However, the electro-optic switching behavior of liquid crystal along random directions results in disclination lines. We found that we can achieve highly uniform alignment of liquid crystal without disclination lines by using the ion beam exposure. We found from XRD and XPS data that the vertical alignment can be achieved when x approaches 1.5 at the $a-SiO_x$ film surface. We have shown that the pretilt angle can be controlled by changing ion beam parameters, such as the ion beam energy, the angle of incidence, and the exposure time. We found that whether liquid crystals can be aligned vertically or homogeneously on $a-SiO_x$ film can be predicted simply by measuring the change in optical transmittance by deposition of $a-SiO_x$ thin film layers. We also have shown that a liquid crystal cell aligned vertically by the ion beam exposure exhibits the voltage-transmittance curve similar to that of a rubbed polyimide cell.

• 대한전자공학회논문지SD
• /
• 제44권5호
• /
• pp.8-14
• /
• 2007

본 논문에서는 MOS 소자의 게이트 유전체로 사용될 고유전 박막으로 $HfO_2$/Hf 박막을 제조하여 그 전기적 특성을 관찰하였다. $HfO_2$박막은 TEMAH와 $O_3$ 전구체를 사용한 ALD 방법으로 p-type (100) 실리콘 웨이퍼 위에 증착하였다. $HfO_2$막을 증착시키기 전에 중간층으로써 Hf 금속 층을 증착하였다. Round-type의 MOS 커패시터 제작을 위해, 상부 전극은 Al 또는 Pt을 이용하여 약 2000 ${\AA}$ 두께의 전극을 형성하였다. $HfO_2$ 박막은 화학정량적 특성을 보였으며, $HfO_2$/Si 계면에서 Si-O 결합 대신 Hf-Si 결합과 Hf-Si-O 결합이 관찰되었다. $HfO_2$와 Si 사이의 Hf 중간층은 $SiO_x$의 성장이 억제되었고, $HfSi_xO_y$으로 변형되었다. 이러한 결과로 $HfO_2$/Hf/Si 구조에서 Hf 중간층이 있음으로 게이트 유전체의 고유전율이 유지되면서 계면 특성이 개선됨을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.749-751
• /
• 2007

A buffer layer consisting of $SiO_x/Ta/Ti$ has been developed in order to overcome the adhesion and stress problems between poly-Si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate.