• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.666-672
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• 2014

We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal $SiO_2$, a plasma-enhanced chemical vapor deposition (PECVD) $SiO_x$, a $150^{\circ}C$-deposited PEVCD $SiO_x$, and a $300^{\circ}C$-deposited PECVD $SiO_x$. Among the devices, the one with the $150^{\circ}C$-deposited PEVCD $SiO_x$ exhibits the best electrical performance including a high field-effect mobility ($=4.86cm^2/Vs$), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localized-trap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.19-24
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• 2009

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.242.2-242.2
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• 2013

최근 산화물 반도체 박막 트랜지스터의 신뢰성(reliability) 평가에 대한 연구가 활발히 이루어지고 있다. 신뢰성 평가하는 한 방법으로 게이트에 바이어스를 지속적으로 인가하여 소자의 문턱 전압의 변화를 통해 안정성(stability)를 확인한다. 전압을 지속적으로 인가하게 되면 소자를 열화시켜 전기적 특성이 약화된다. 본 연구에선 ITZO 박막 트랜지스터의 신뢰성 평가를 위해 게이트 절연막($SiO_2$, $SiN_x$)에 따른 ITZO 소자를 제작 및 게이트 바이어스 스트레스 후 전기적 특성을 비교, 분석하였다. 제작된 소자의 게이트에 전압을 +15V로 7200초 동안 인가하였다. 스트레스 후 게이트 절연막이 $SiO_2$, $SiN_x$인 ITZO 산화물 박막 트랜지스터 모두 positive 방향으로 이동하였고, 그 결과 문턱 전압, 이동도, 아문턱 기울기의 변화가 발생하였다. $SiO_2$의 경우 아문턱 기울기의 변화가 거의 없이 문턱 전압의 변화만을 보였고, 이는 단순히 ITZO층과 게이트 절연막 계면에 전자가 포획되거나 혹은 게이트 절연막 내에 전자가 주입이 되었기 때문이다. 반면에 $SiN_x$의 경우 ITZO층과 게이트 절연막 계면에 추가적인 결함(defect)이 생성되었기 때문에 $SiO_2$보다 더 많은 전자를 포획하여 아문턱 기울기와 문턱 전압의 변화가 컸다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.311-312
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• 2006

We studied homeotropic alignment effect for a nematic liquid crystal (NLC) on the $SiO_x$, thin film irradiated by the new ion beam method $SiO_x$ thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) and were treated by the DuoPIGatron ion source. A uniform liquid crystal alignment effect was achieved over 2100 eV ion beam energy. Tilt angle were about $90^{\circ}$ and were not affected by various ion beam energy.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.474-477
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• 2018

$Ca_3MgSi_2O_8:Eu^{2+}$(x = 0.003, 0.005, 0.007, 0.01, 0.03 mol) white phosphors for Light Emitting Diodes(LED) are synthesized with different concentrations of $Eu^{2+}$ ions using a solid state reaction method. The crystal structures, surface and optical properties of the phosphors are investigated using X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM) and photoluminescence(PL). The X-Ray Diffraction results reveals that the crystal structure of the $Ca_3MgSi_2O_8:Eu^{2+}$ is a monoclinic system. The particle size of $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors is about $1{\sim}5{\mu}m$, as confirmed by SEM images. The maximum emission spectra of the phosphors are observed at 0.01 mol $Eu^{2+}$ concentration. The decrease in PL intensity in the $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors with $Eu^{2+}$ concentration is interpreted by concentration quenching. The International Commission on Illumination(CIE) coordinate of 0.01 mol Eu doped $Ca_3MgSi_2O_8$ is X = 0.2136, Y = 0.3771.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.213-213
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• 2013

$SiO_2$ 박막은 다양한 특성에 의해 널리 사용되고 있으며, 최근 보호막 소재로 각광받고 있다. 본 연구에서는 산소선형 이온빔을 통해 $SiC_xH_yO_z$ 박막을 후처리 하였으며, 후처리 공정을 통해 $SiC_xH_yO_z$ 박막을 산화시켰다. 이를 통해 $SiC_xH_yO_z$ 최상층에 $SiO_2$ 박막을 형성하는 공정을 개발하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.66-67
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• 2006

We studied nematic liquid crystal (NLC) alignment effect on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. Pretilt angle and thermal stability characteristic as well as NLC alignment effect were investigated. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and pretilt angle was about $90^{\circ}$. The thermal stability of the $SiO_x$ thin film was sustained by $200^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.451-452
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• 2006

We studied the electro-optical characteristic of vertical alignment liquid crystal display(VA-LCD) on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. LC alignment characteristic showed homeotropic alignment, and pretilt angle was about $90^{\circ}$. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and the electro-optical characteristic of the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system was excellent.

• Fibers and Polymers
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• v.2 no.3
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• pp.135-140
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• 2001

Organic-inorganic hybrid composites consisting of poly(vinylidene fluoride) (PVDF) and SiO$_2$ were prepared through a sol-gel process and the crystallization behavior of PVDF in the presence of $SiO_2$ networks was investigated by spectroscopic, thermal and x-ray diffraction measurements. The hybrid composites obtained were relatively transparent, and brittleness increased with increasing content of tetraethoxysilane (TEOS). It was regarded from FT-lR and DSC thermal analyses that at least a certain interaction existed between PVDF molecules and the $SiO_2$ networks. X-ray diffraction measurements showed that all of the hybrid samples had a crystal structure of PVDF ${\gamma}$-phase. Fresh gel prepared from the sol-gel reaction showed a very weak x-ray diffraction peak near 2$\theta$=$21^{\circ}$ due to PVDF crystallization, and Intensity increased grade-ally with time after gelation. The crystallization behavior of PVDF was strongly affected by the amount of $SiO_2$ networks. That is, $SiO_2$ content directly influenced preference and disturbance fur crystallization. In polymer-rich hybrids, $SiO_2$ networks had a favorable effect on the extent of PVDF crystallization. In particular, the maximum portent crystallinity of PVDF occurred at the content of 3.7 wt% $SiO_2$ and was higher than that of pure PVDF. However. beyond about 10 wt% $SiO_2$, the crystallization of PVDF was strongly confined.