• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 자원환경지질
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• 제25권3호
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• pp.259-273
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• 1992

성산광산은 한반도의 남서부에 위치하는 큰 딕카이트광상 중에 하나이다. 광석광물로는 주로 딕카이트와 석영이며, 소량의 명반석, 카올리나이트 및 견운모가산출된다. 성산광상의 주변지질은 주로 백악기의 산성 화산암류로 구성된다. 연구지역에서 이러한 암석들은 동서방향의 축을 갖고 동쪽으로 경사지는 향사구조를 갖는다. 산성 화산암류는 심한 열수변질작용을 받고 있다. 이러한 암석들은 중심부로부터 바깥쪽으로 딕카이트, 딕카이트-석영, 석영, 견운모, 알바이트 및 녹니석대로 구분된다. 변질암의 이러한 누대배열은 주변암 (용결응회암과 유문암의 상부)이 산성열수에 의한 변질작용으로 생성되었다. 그것은 황화수소를 함유한 용액과 초기 가스, 그리고 다른 것들이 지표 가까이에서 산화되었고, 황산열수용액에 의해 형성되어졌음을 시사한다. 변질암의 광물학적, 화학적 변화에 대하여는 여러가지 방법으로 검토하였고, 특히, 56개의 변질암에 대한 화학조성은 습식분석과 XRF로써 분석하였다. 이러한 분석자료들을 기초로 하여 고창한 결과 거의 모든 원소가 원암으로부터 이동되었다고 사료된다. 광상의 형성온도는 석영대로부터 얻은 시료의 유체포유물 연구로부터 200 이상임이 판명되었다. 변질대의 광물조성과 암석의 화학 성분으로 보아 성산광상을 형성한 열수용액은 $m_{K^+}=0.003$, $m_{Na^+}=0.097$, $m_{SiO_2(aq.)}=0.008$ 및 pH=5.0으로 나타났다.

• Korean Chemical Engineering Research
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• 제45권4호
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• pp.410-413
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• 2007

불균일계 중합촉매내 내부전자공여체(ID)의 존재 유무와 종류가 에틸렌과 1-부텐 간의 공중합에서 얻어지는 공중합물에 미치는 영향에 대하여 살펴보았다. 실리카 담지 $TiCl_4$ 촉매를 실리카 담지체에 ethylaluminium dichloride, magnesium alkyl, 2-ethyl-1-hexanol, $TiCl_4$와 여러 종류의 ID 등을 이용하여 제조하였으며 이 때 ID와 Ti의 몰비를 0.5로 고정하였다. ID는 ethylbenzoate(EB), diisobuylphthalate(DIBP), dioctylphthalate(DOP)을 사용하였다. ID가 촉매 내에 존재하는 경우 Ti(+3)의 함량비가 증가하였다. 공중합 활성은 EB를 $TiCl_4$ 반응 후에 투입한 촉매가 가장 높았으며 그 외의 ID가 존재하는 촉매는 활성이 감소하는 현상을 보였다. Xylene soluble(XS) 측정값은 ID가 존재하는 모든 중합촉매가 ID가 없는 경우 보다 50% 이상 감소하였으며 Crystaf 분석 결과 DIBP가 존재하는 촉매가 상대적으로 균일한 화학조성분포를 보였다. 이는 ID가 분균일한 촉매활성점을 보다 균일하게 만드는 역할에서 기인한 것으로 보이며 입체규칙성을 갖는 활성점을 만들거나 비입체규칙성 활성점을 blocking하는 역할 때문인 것으로 설명할 수 있다.

• 자원환경지질
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• 제30권6호
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• pp.603-612
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• 1997

경상누층군이라 불리는 백악기 육성퇴적암-화산쇄설물들은 백악기 말-제3기초의 화강암류에 의해 관입 되어 있다. 의성-신령지역의 화강암류는 다양한 암상과 화학조성을 갖는다 : 반려암; 46.9, 섬록암; 58.3, 흑운모 화강암; 66.3~69.3, 장석 반암; 71.0 wt.% $SiO_2$. 화산암류는 화학적으로 금성산 칼데라에서는 안산암질 성분이 결여 된 현무암-유문암의 bimodal 유형과 선암산-화산 칼데라에서는 안산암-유문암의 felsic 유형으로 나뉜다. 대부분의 화성암류는 비알칼리 계열에 속하고, 칼크-알칼리 마그마의 분화 경로를 따른다. 화강암류는 높은 Zr/Y비에 의해 화산암류와 잘 구별된다. 화산암류에서 Zr/Y와 K/Y비의 차이는 맨틀기원 및 분별작용에서 불균질로 설명될 수 있다. 콘드라이트로 균질화된 희토류 원소량은 화강암류에서 Th와 K이 결핍되어 있고, 금성산 칼데라의 유문암에서 Sr와 Ti의 결핍되어 있다. 선암산-화산 칼데라의 유문암은 Rb, La 및 Ce이 부화되어 있다. $Rb-SiO_2$와 Rb-Y+Nb의 관계도는 화강암류와 화산암류가 화산호 환경이었음을 암시한다. K-Ar 연대는 4회의 심성활동 (섬록암; 89 Ma, 화강암; 64~62 Ma, 화강암/반암류; 55~52 Ma, 반려암; 52~45 Ma)으로 나뉘고, 금성산 칼데라의 bimodal 유형 (71~66 Ma)과 선암산-화산 칼데라의 felsic 유형 (61~54 Ma)으로 특징지워지는 화산활동이 수반되었다. 지화학 및 연대측정 자료들은 화성암류가 백악기말-제3기초 동안 다양한 지질학적 에피소드의 결과로 형성되었슴을 암시한다.

• 전기학회논문지
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• 제63권1호
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• pp.80-84
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• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

• 환경위생공학
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• 제9권2호
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• pp.8-23
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• 1994

During the period from Mar., 1991 to Feb., 1992 66 tSP samples were collected by Hi volume air sampler at 1 sampling site in Seoul and the amount of concentration of 21 components(SO$_{4}$$^{2-}$, NO$_{3}$$^{-}$, NH$_{4}$$^{+}$, Cl$^{-}$, Al, Ba, Ca, Cd, Cr, Cu, Fe, It Mg, Mn, Na, Ni, Pt Si, Ti, Zn, Zr ) were measured. And monthly and seasonal variation were surveyed and the principal component analysis( PCA ) were carried out with respect to these amount of pollutants, minimum of visibility and radiation on a horizontal surface. The total amount of soluble ion in water was high in order o(SO$_{4}$$^{2-}$> NO$_{3}$$^{-}$> N%'>Cl$^{-}$ and metal ion was high in order of Na> Ca>Si> Fe> Al> K> Mg> Zn> Pb> Cu>Ti> Mn > Ba> Cr> Zr> Ni> Cd. There was Seasonal variation in concentration for SO$_{4}$$^{2-}$, NH$_{4}$$^{+}$, Cl$^{-}$, Na, Al, Ca, Bt Mg, Fe and Si. It was assumed that the components of the highest concentration on April were depend on yellow sand and the frequency of wind velocity and direction. As the results of PCA, the amount of pollution components was able to characterized with two principal components(Z$_{1}$, Z$_{2}$ ). The first principal components Z$_{1}$ was considered to be a factor indicating the pollutants originated from natural generation and The second principal components Z$_{2}$ was considered to be a factor indicating the pollutants originated from human work. The monthly concentration of pollutants in ISP, minimum of visibility and radiation on a horizontal surface was possible to evaluate by the use of these two principal components Z$_{1}$ and Z$_{2}$ .

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• 전자공학회논문지A
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• 제31A권8호
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• pp.80-90
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• 1994

The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.